Experimental Analysis of Proton-Induced Displacement and Ionization Damage Using Gate-Controlled Lateral PNP Bipolar Transistors

The electrical characteristics of proton-irradiated bipolar transistors are affected by ionization damage to the insulating oxide and displacement damage to the semiconductor bulk. While both types of damage degrade the transistor, it is important to understand the mechanisms individually and to be able to analyze them separately. In this paper, a method for analyzing the effects of ionization and displacement damage using gate-controlled lateral PNP bipolar junction transistors is described. This technique allows the effects of oxide charge, surface recombination velocity, and bulk traps to be measured independently

Hoop/column antenna RF verification model. Volume 2: Analysis and correlation

As part of the Large Space System Technology Program, the theoretical and experimental results of the RF characteristic of a hoop/column, quad aperture antenna using an RF verification model are presented. To satisfy the primary purposes of the model, experimental pattern data is provided for the quad aperture configuration at different reflector edge illumination levels, from which the geometry and edge effects can be assessed, and experimental data which can be compared with calculations using various theoretical reflector scattering formulae are provided. It also experimentally determines the effects upon secondary patterns of scale model quartz cables, as used in the hoop/column design, upon secondary patterns in order to assess the importance of developing a scattering theory to predict such effects. In addition, a comprehensive theoretical study and the experimental pattern results of quad aperture antenna feeds, a discussion of the fundamental affect of parasitic side lobes, their amplitude, and location in space

Hoop/Column Antenna: RF Verification Model. Volume 1: Test Results

As part of the Large Space System Technology Program, this report, in two volumes, presents the theoretical and experimental results of the RF characteristic of a hoop/column, quad aperture antenna using an RF verification model. To satisfy the primary purposes of the model it provides experimental pattern data for the quad aperture configuration at different reflector edge illumination levels, from which the geometry and edge effects can be assessed, and provides experimental data which can be compared with calculations using various theoretical reflector scattering formulae. It also experimentally determines the effects upon secondary patterns of scale model quartz cables, as used in the hoop/column design, upon secondary patterns in order to assess the importance of developing a scattering theory to predict such effects. In addition, this report contains a comprehensive theoretical study and the experimental pattern results of quad aperture antenna feeds, a discussion of the fundamental affect of parasitic side lobes, their amplitude, and location in space

Radiation-induced charge trapping in bipolar base oxides

Capacitance-voltage and thermally stimulated current methods are used to investigate radiation induced charge trapping in bipolar base oxides. Results are compared with models of oxide and interface trap charge buildup at low electric fields

Radiation-induced gain degradation in lateral PNP BJTs with lightly and heavily doped emitters

Ionizing radiation may cause failures in ICs due to gain degradation of individual devices. The base current of irradiated bipolar devices increases with total dose, while the collector current remains relatively constant. This results in a decrease in the current gain. Lateral PNP (LPNP) transistors typically exhibit more degradation than vertical PNP devices at the same total dose, and have been blamed as the cause of early IC failures at low dose rates. It is important to understand the differences in total-dose response between devices with heavily- and lightly-doped emitters in order to compare different technologies and evaluate the applicability of proposed low-dose-rate hardness-assurance methods. This paper addresses these differences by comparing two different LPNP devices from the same process: one with a heavily-doped emitter and one with a lightly-doped emitter. Experimental results demonstrate that the lightly-doped devices are more sensitive to ionizing radiation and simulations illustrate that increased recombination on the emitter side of the junction is responsible for the higher sensitivity

Reliability Concerns for Flying SiC Power MOSFETs in Space

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed

Characterizing SRAM Single Event Upset in Terms of Single and Double Node Charge Collection

A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM s state is shown to be based upon the resistive path from the p+-sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are then predicted and compared to recent SRAM test data

The effects of emitter-tied field plates on lateral PNP ionizing radiation response

Radiation response comparisons of lateral PNP bipolar technologies reveal that device hardening may be achieved by extending the emitter contact over the active base. The emitter-tied field plate suppresses recombination of carriers with interface traps

DNA methylation-based profiling of bone and soft tissue tumours: a validation study of the 'DKFZ Sarcoma Classifier'

Diagnosing bone and soft tissue neoplasms remains challenging because of the large number of subtypes, many of which lack diagnostic biomarkers. DNA methylation profiles have proven to be a reliable basis for the classification of brain tumours and, following this success, a DNA methylation-based sarcoma classification tool from the Deutsches Krebsforschungszentrum (DKFZ) in Heidelberg has been developed. In this study, we assessed the performance of their classifier on DNA methylation profiles of an independent data set of 986 bone and soft tissue tumours and controls. We found that the 'DKFZ Sarcoma Classifier' was able to produce a diagnostic prediction for 55% of the 986 samples, with 83% of these predictions concordant with the histological diagnosis. On limiting the validation to the 820 cases with histological diagnoses for which the DKFZ Classifier was trained, 61% of cases received a prediction, and the histological diagnosis was concordant with the predicted methylation class in 88% of these cases, findings comparable to those reported in the DKFZ Classifier paper. The classifier performed best when diagnosing mesenchymal chondrosarcomas (CHSs, 88% sensitivity), chordomas (85% sensitivity), and fibrous dysplasia (83% sensitivity). Amongst the subtypes least often classified correctly were clear cell CHSs (14% sensitivity), malignant peripheral nerve sheath tumours (27% sensitivity), and pleomorphic liposarcomas (29% sensitivity). The classifier predictions resulted in revision of the histological diagnosis in six of our cases. We observed that, although a higher tumour purity resulted in a greater likelihood of a prediction being made, it did not correlate with classifier accuracy. Our results show that the DKFZ Classifier represents a powerful research tool for exploring the pathogenesis of sarcoma; with refinement, it has the potential to be a valuable diagnostic tool

Capturing and Modeling Radiation Hardness Assurance throughout the Project Lifecycle

This presentation describes how assurance arguments for the radiation reliability of a system can be modeled in Goal Structuring Notation over the life-cycle of a project. A practical implementation of the NASA-STD-8729.1 and Model-Based Mission Assurance