Argon excimer emission from high-pressure microdischarges in metal capillaries

We report on argon excimer emission from high-pressure microdischarges formed inside metal capillaries with or without gas flow. Excimer emission intensity from a single tube increases linearly with gas pressure between 400 and 1000 Torr. Higher discharge current also results in initial intensity gains until gas heating causes saturation or intensity drop. Argon flow through the discharge intensifies emission perhaps by gas cooling. Emission intensity was found to be additive in prealigned dual microdischarges, suggesting that an array of microdischarges could produce a high-intensity excimer source

Mechanism for Membrane Electroporation Irreversibility Under High-Intensity, Ultrashort Electrical Pulse Conditions

An improved electroporation model is used to address membrane irreversibility under ultrashort electric pulse conditions. It is shown that membranes can survive a strong electric pulse and recover provided the pore distribution has a relatively large spread. If, however, the population consists predominantly of larger radii pores, then irreversibility can result. Physically, such a distribution could arise if pores at adjacent sites coalesce. The requirement of close proximity among the pore sites is more easily satisfied in smaller organelles than in outer cell membranes. Model predictions are in keeping with recent observations of cell damage to intracellular organelles (e.g., mitochondria), without irreversible shock at the outer membranes, by a nanosecond, high-intensity electric pulse. This mechanism also explains the greater damage from multiple electric shocks

Electroporation Dynamics in Biological Cells Subjected to Ultrafast Electrical Pulses: A Numerical Simulation Study

A model analysis of electroporation dynamics in biological cells has been carried out based on the Smoluchowski equation. Results of the cellular response to short, electric pulses are presented, taking account of the growth and resealing dynamics of transient aqueous pores. It is shown that the application of large voltages alone may not be sufficient to cause irreversible breakdown, if the time duration is too short. Failure to cause irreversible damage at small pulse widths could be attributed to the time inadequacy for pores to grow and expand beyond a critical threshold radius. In agreement with earlier studies, it is shown that irreversible breakdown would lead to the formation of a few large pores, while a large number of smaller pores would appear in the case of reversible breakdown. Finally, a pulse width dependence of the applied voltage for irreversible breakdown has been obtained. It is shown that in the absence of dissipation, the associated energy input necessary reduces with decreasing pulse width to a limiting value. However, with circuit effects taken into account, a local minima in the pulse dependent energy function is predicted, in keeping with previously published experimental reports

Bistable Behavior of the Dark Current in Copper-Doped Semi-Insulating Gallium Arsenide

The dark current characteristics of gallium arsenide doped with silicon and compensated with diffused copper were found to have a pronounced region of current controlled negative differential conductivity (ndc) similar to the characteristics of a thyristor. The resistivity of the semi‐insulating semiconductor was measured to be 105 Ω cm for applied voltages up to 2.2 kV, which corresponds to an average electric field of 38 kV/cm. At higher voltages, a transition to a stable high current state was observed with a current rate of rise exceeding 1011 A/s. There is evidence of the formation of at least one current filament during this transition. A theoretical model based on drift diffusion and boundary conditions that allows double carrier injection at the contacts has been used to show that the observed negative differential resistance is due to the filling of deep copper acceptors. The model also shows that the ndc curves may be tailored by adjusting the copper concentration. Doping of GaAs with various concentrations of copper was shown to change the dark current characteristics in a way predicted by the model

Conductivity in Jurkat cell suspension after ultrashort electric pulsing

Ultrashort electric pulses applied to similar cell lines such as Jurkat and HL-60 cells can produce markedly different results , which have been documented extensively over the last few years. We now report changes in electrical conductivity of Jurkat cells subjected to traditional electroporation pulses (50 ms pulse length) and ultrashort pulses (10 ns pulse length) using time domain dielectric spectroscopy (TDS). A single 10 ns, 150 kV/cm pulse did not noticeably alter suspension conductivity while a 50 ms, 2.12 kV/cm pulse with the same energy caused an appreciable conductivity rise. These results support the hypothesis that electroporation pulses primarily interact with the cell membrane and cause conductivity rises due to ion transport from the cell to the external media, while pulses with nanosecond duration primarily interact with the membranes of intracellular organelles. However, multiple ultrashort pulses have a cumulative effect on the plasma membrane, with five pulses causing a gradual rise in conductivity up to ten minutes post-pulsing

Simulations of Nanopore Formation and Phosphatidylserine Externalization in Lipid Membranes Subjected to a High-Intensity, Ultrashort Electric Pulse

A combined MD simulator and time dependent Laplace solver are used to analyze the electrically driven phosphatidylserine externalization process in cells. Time dependent details of nanopore formation at cell membranes in response to a high-intensity (100kV∕cm), ultrashort (10ns) electric pulse are also probed. Our results show that nanosized pores could typically be formed within about 5ns. These predictions are in very good agreement with recent experimental data. It is also demonstrated that defect formation and PS externalization in membranes should begin on the anode side. Finally, the simulations confirm that PS externalization is a nanopore facilitated event, rather than the result of molecular translocation across the trans-membrane energy barrier

Impact of Field-Dependent Electronic Trapping Across Coulomb Repulsive Potentials on Low Frequency Charge Oscillations

We have performed Monte Carlo simulations to obtain the field dependence of electronic trapping across repulsive potentials in GaAs. Such repulsive centers are associated with deep level impurities having multiply charged states. Our results reveal a field‐dependent maxima in the electronic capture coefficient, and the overall shape is seen to depend on the background electron density due to the effects of screening. Based on the Monte Carlo calculations, we have examined the stability of compensated semiconductors containing such repulsive centers. Our analysis indicates a potential for low frequency charge oscillations which is in keeping with available experimental data

Supralinear Photoconductivity of Copper Doped Semi-Insulating Gallium Arsenide

We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low‐energy phototransistor application for the GaAs:Cu material system is presented

Xenon Excimer Emission From Pulsed Microhollow Cathode Discharges

By applying electrical pulses of 20 ns duration to xenon microplasmas, generated by direct current microhollow cathode discharges, we were able to increase the xenon excimer emission by more than an order of magnitude over direct current discharge excimer emission. For pulsed voltages in excess of 500 V, the optical power at 172 nm was found to increase exponentially with voltage. Largest values obtained were 2.75 W of vacuum-ultraviolet optical power emitted from a single microhollow cathode discharge in 400 Torr xenon with a 750 V pulse applied to a discharge. Highest radiative emittance was 15.2 W/cm2. The efficiency for excimer emission was found to increase linearly with pulsed voltages above 500 V reaching values of 20% at 750 V

Resonant Energy Transfer From Argon Dimers to Atomic Oxygen in Microhollow Cathode Discharges

The emission of atomic oxygen lines at 130.2 and 130.5 nm from a microhollow cathode discharge in argon with oxygen added indicates resonant energy transfer from argon dimers to oxygen atoms. The internal efficiency of the vacuum-ultraviolet (VUV) radiation was measured as 0.7% for a discharge in 1100 Torr argon with 0.1% oxygen added. The direct current VUV point source operates at voltages below 300 V and at current levels of milliamperes