61,225 research outputs found

    Research on the mechanism and kinetics of oxidation of silicon in air Semiannual report, 1 Dec. 1967 - 31 May 1968

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    Ellipsometric method for measuring optical parameters of substrate and oxidation surface layer thickness on silico

    Viscous Withdrawal of Miscible Liquid Layers

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    In viscous withdrawal, a converging flow imposed in an upper layer of viscous liquid entrains liquid from a lower, stably stratified layer. Using the idea that a thin tendril is entrained by a local straining flow, we propose a scaling law for the volume flux of liquid entrained from miscible liquid layers. A long-wavelength model including only local information about the withdrawal flow is degenerate, with multiple tendril solutions for one withdrawal condition. Including information about the global geometry of the withdrawal flow removes the degeneracy while introducing only a logarithmic dependence on the global flow parameters into the scaling law.Comment: 4 pages, 4 figure

    Dielectronic recombination data for astrophysical applications: Plasma rate-coefficients for Fe^q+ (q=7-10, 13-22) and Ni^25+ ions from storage-ring experiments

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    This review summarizes the present status of an ongoing experimental effort to provide reliable rate coefficients for dielectronic recombination of highly charged iron ions for the modeling of astrophysical and other plasmas. The experimental work has been carried out over more than a decade at the heavy-ion storage-ring TSR of the Max-Planck-Institute for Nuclear Physics in Heidelberg, Germany. The experimental and data reduction procedures are outlined. The role of previously disregarded processes such as fine-structure core excitations and trielectronic recombination is highlighted. Plasma rate coefficients for dielectronic recombination of Fe^q+ ions (q=7-10, 13-22) and Ni^25+ are presented graphically and in a simple parameterized form allowing for easy use in plasma modeling codes. It is concluded that storage-ring experiments are presently the only source for reliable low-temperature dielectronic recombination rate-coefficients of complex ions.Comment: submitted for publication in the International Review of Atomic and Molecular Physics, 8 figures, 3 tables, 68 reference

    Shuttle payload S-band communications system

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    The Shuttle payload S-band communications system design, operational capabilities, and performance are described in detail. System design requirements, overall system and configuration and operation, and laboratory/flight test results are presented. Payload communications requirements development is discussed in terms of evolvement of requirements as well as the resulting technical challenges encountered in meeting the initial requirements. Initial design approaches are described along with cost-saving initiatives that subsequently had to be made. The resulting system implementation that was finally adopted is presented along with a functional description of the system operation. A description of system test results, problems encountered, how the problems were solved, and the system flight experience to date is presented. Finally, a summary of the advancements made and the lessons learned is discussed

    Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode

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    We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.Comment: To be published in Phys. Rev. Let

    Apollo applications program data archives

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    Apollo applications program data archives to collect, store, retrieve, and distribute experiments-related dat
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