389 research outputs found

    Priorities in post harvest research support for sorghum and millet in eastern Africa

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    Meeting: Regional Sorghum and Millet Workshop, 6th, 20-27 July 1988, S

    Analysis of progress and achievements in regional dehulling projects

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    Meeting: International Workshop on Policy, Practice and Potential Relating to Uses of Sorghum and Millets, 8-12 Feb. 1988, Bulawayo, Z

    Priorities for applied research in the post harvest sector of rootcrops

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    Meeting: Eastern and Southern Africa Regional Root Crops Workshop, 3d, 7-11 Dec. 1987, Mzuzu, M

    Priorities in post harvest research support for sorghum and millet in eastern Africa

    Get PDF
    Meeting: Regional Sorghum and Millet Workshop, 6th, 20-27 July 1988, S

    Experimental methods of post-growth tuning of the excitonic fine structure splitting in semiconductor quantum dots

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    Deterministic sources of polarization entangled photon pairs on demand are considered as important building blocks for quantum communication technology. It has been demonstrated that semiconductor quantum dots (QDs), which exhibit a sufficiently small excitonic fine structure splitting (FSS) can be used as triggered, on-chip sources of polarization entangled photon pairs. As-grown QDs usually do not have the required values of the FSS, making the availability of post-growth tuning techniques highly desired. This article reviews the effect of different post-growth treatments and external fields on the FSS such as thermal annealing, magnetic fields, the optical Stark effect, electric fields, and anisotropic stress. As a consequence of the tuning of the FSS, for some tuning techniques a rotation of the polarization of the emitted light is observed. The joint modification of polarization orientation and FSS can be described by an anticrossing of the bright excitonic states

    Transport in ZnCoO thin films with stable bound magnetic polarons

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    Diluted magnetic ZnCoO films with 5 at.% Co have been fabricated by pulsed laser deposition on c-plane sapphire substrates and Schottky and Ohmic contacts have been prepared in top-top configuration. The diode current is significantly reduced after the diode has been subjected to an external magnetic field. In the reverse bias range the corresponding positive magnetoresistance is persistent and amounts to more than 1800% (50 K), 240% (30 K), and 50% (5 K). This huge magnetoresistance can be attributed to the large internal magnetic field in depleted ZnCoO with ferromagnetic exchange between stable bound magnetic polarons
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