Generating single photons at gigahertz modulation-speed using electrically controlled quantum dot microlenses

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 108, 021104 (2016) and may be found at https://doi.org/10.1063/1.4939658.We report on the generation of single-photon pulse trains at a repetition rate of up to 1 GHz. We achieve this speed by modulating the external voltage applied on an electrically contacted quantum dot microlens, which is optically excited by a continuous-wave laser. By modulating the photoluminescence of the quantum dot microlens using a square-wave voltage, single-photon emission is triggered with a response time as short as (281 ± 19) ps, being 6 times faster than the radiative lifetime of (1.75 ± 0.02) ns. This large reduction in the characteristic emission time is enabled by a rapid capacitive gating of emission from the quantum dot, which is placed in the intrinsic region of a p-i-n-junction biased below the onset of electroluminescence. Here, since our circuit acts as a rectifying differentiator, the rising edge of the applied voltage pulses triggers the emission of single photons from the optically excited quantum dot. The non-classical nature of the photon pulse train generated at GHz-speed is proven by intensity autocorrelation measurements with g(2)(0) = 0.3 ± 0.1. Our results combine optical excitation with fast electrical gating and thus show promise for the generation of indistinguishable single photons at rates exceeding the limitations set by the intrinsic radiative lifetime.BMBF, 03V0630, Entwicklung einer Halbleiterbasierten Einzelphotonenquelle für die Quanteninformationstechnologie (QSOURCE)DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelement

400%/W second harmonic conversion efficiency in 14μm\mathrm{14 \mu m}-diameter gallium phosphide-on-oxide resonators

Second harmonic conversion from 1550~nm to 775~nm with an efficiency of 400% W$^{-1}$ is demonstrated in a gallium phosphide (GaP) on oxide integrated photonic platform. The platform consists of doubly-resonant, phase-matched ring resonators with quality factors $Q \sim 10^4$, low mode volumes $V \sim 30 (\lambda/n)^3$, and high nonlinear mode overlaps. Measurements and simulations indicate that conversion efficiencies can be increased by a factor of 20 by improving the waveguide-cavity coupling to achieve critical coupling in current devices.Comment: 13 pages, 6 figure

Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit

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Frequency Control of Single Quantum Emitters in Integrated Photonic Circuits

Generating entangled graph states of qubits requires high entanglement rates with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation

Accessing the dark exciton spin in deterministic quantum-dot microlenses

The dark exciton state in semiconductor quantum dots (QDs) constitutes a long-lived solid-state qubit which has the potential to play an important role in implementations of solid-state-based quantum information architectures. In this work, we exploit deterministically fabricated QD microlenses which promise enhanced photon extraction, to optically prepare and read out the dark exciton spin and observe its coherent precession. The optical access to the dark exciton is provided via spin-blockaded metastable biexciton states acting as heralding states, which are identified by deploying polarization-sensitive spectroscopy as well as time-resolved photon cross-correlation experiments. Our experiments reveal a spin-precession period of the dark exciton of (0.82 ± 0.01) ns corresponding to a fine-structure splitting of (5.0 ± 0.7) μeV between its eigenstates ↑⇑±↓⇓. By exploiting microlenses deterministically fabricated above pre-selected QDs, our work demonstrates the possibility to scale up implementations of quantum information processing schemes using the QD-confined dark exciton spin qubit, such as the generation of photonic cluster states or the realization of a solid-state-based quantum memory