17 research outputs found
Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy
3D InGaN/GaN microstructures grown by metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) have been extensively studied using a range of electron microscopy techniques. The growth of material by MBE has led to the growth of cubic GaN material. The changes in these crystal phases has been investigated by Electron Energy Loss Spectroscopy, where the variations in the fine structure of the N K‐edge shows a clear difference allowing the mapping of the phases to take place. GaN layers grown for light emitting devices sometimes have cubic inclusions in the normally hexagonal wurtzite structures, which can influence the device electronic properties. Differences in the fine structure of the N K‐edge between cubic and hexagonal material in electron energy loss spectra are used to map cubic and hexagonal regions in a GaN/InGaN microcolumnar device. The method of mapping is explained, and the factors limiting spatial resolution are discussed
Uebersicht ueber die Funktionen des cl-pds
Available from TIB Hannover: RR 8798(1997,1.1) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman
Optical properties and internal quantum efficiency of InGaN/GaN core-shell microrods for solid state lighting
Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolarInxGa1−xN/GaNquantum wells
Nanoscale Characterizationof InGaN/GaN core-shell microrods: Correlation of the optical properties and the composition of the InGaN single quantum well
Optical, structural and compositional nano-scale characterization of InGaN/GaN core-shell microrod heterostructucom
Impact of alloy disorder on Auger recombination in single InGaN/GaN core-shell microrods
International audienc
Spatially dependent carrier dynamics in single InGaN/GaN core-shell microrod by time-resolved cathodoluminescence
International audienc