Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions

We report a large, quasi-reversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor (\gma) is exchange coupled to a hard ferromagnetic metal (MnAs). Our observations are consistent with the formation of a region of inhomogeneous magnetization (an "exchange spring") within the biased \gma layer. The distinctive tunneling anisotropic magnetoresistance of \gma produces a pronounced sensitivity of the magnetoresistance to the state of the exchange spring

Boundary conditions and the entropy bound

The entropy-to-energy bound is examined for a quantum scalar field confined to a cavity and satisfying Robin condition on the boundary of the cavity. It is found that near certain points in the space of the parameter defining the boundary condition the lowest eigenfrequency (while non-zero) becomes arbitrarily small. Estimating, according to Bekenstein and Schiffer, the ratio $S/E$ by the $\zeta$-function, $(24\zeta (4))^{1/4}$, we compute $\zeta (4)$ explicitly and find that it is not bounded near those points that signals violation of the bound. We interpret our results as imposing certain constraints on the value of the boundary interaction and estimate the forbidden region in the parameter space of the boundary conditions.Comment: 16 pages, latex, v2: typos corrected, to appear in Phys.Rev.

Time Dependent Effects and Transport Evidence for Phase Separation in La_{0.5}Ca_{0.5}MnO_{3}

The ground state of La_{1-x}Ca_{x}MnO_{3} changes from a ferromagnetic metallic to an antiferromagnetic charge-ordered state as a function of Ca concentration at x ~ 0.50. We present evidence from transport measurements on a sample with x = 0.50 that the two phases can coexist, in agreement with other observations of phase separation in these materials. We also observe that, by applying and then removing a magnetic field to the mainly charge-ordered state at some temperatures, we can "magnetically anneal" the charge order, resulting in a higher zero-field resistivity. We also observe logarithmic time dependence in both resistivity and magnetization after a field sweep at low temperatures.Comment: 9 pages, LATEX, 3 postscript figure