108 research outputs found
Ballistic electron transport through magnetic domain walls
Electron transport limited by the rotating exchange-potential of domain walls
is calculated in the ballistic limit for the itinerant ferromagnets Fe, Co, and
Ni. When realistic band structures are used, the domain wall magnetoresistance
is enhanced by orders of magnitude compared to the results for previously
studied two-band models. Increasing the pitch of a domain wall by confinement
in a nano-structured point contact is predicted to give rise to a strongly
enhanced magnetoresistance.Comment: 4 pages, 2 figures; to appear in PRB as a brief repor
Simple elbow dislocations: a systematic review of the literature
Objective: To identify if functional treatment is the best available treatment for simple elbow dislocations. Search strategy: Electronic databases MEDLINE, EMBASE, LILACS, and the Cochrane Central Register of Controlled Trials. Selection criteria: Studies were eligible for inclusion if they were trials comparing different techniques for the treatment of simple elbow dislocations. Data analysis: Results were expressed as relative risk for dichotomous outcomes and weighted mean difference for continuous outcomes with 95% confidence intervals. Main results: This review has included data from two trials and three observational comparative studies. Important data were missing from three observational comparative studies and the results from these studies were extracted for this review. No difference was found between surgical treatment of the collateral ligaments and plaster immobilisation of the elbow joint. Better range of movement, less pain, better functional scores, shorter disability and shorter treatment time were seen after functional treatment versus plaster immobilisation
Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review
In magnetoresistive (MR) studies of magnetic multilayers composed of
combinations of ferromagnetic (F) and non-magnetic (N) metals, the magnetic
moment (or related 'spin') of each conduction electron plays a crucial role,
supplementary to that of its charge. While initial analyses of MR in such
multilayers assumed that the direction of the spin of each electron stayed
fixed as the electron transited the multilayer, we now know that this is true
only in a certain limit. Generally, the spins 'flip' in a distance
characteristic of the metal, its purity, and the temperature. They can also
flip at F/N or N1/N2 interfaces. In this review we describe how to measure the
lengths over which electron moments flip in pure metals and alloys, and the
probability of spin-flipping at metallic interfaces. Spin-flipping within
metals is described by a spin-diffusion length,l^M(sf), where the metal M = F
or N. Spin-diffusion lengths are the characteristic lengths in the
current-perpendicular-to-plane (CPP) and lateral non-local (LNL) geometries
that we focus upon in this review. In certain simple cases, l^N(sf) sets the
distance over which the CPP-MR and LNL-MR decrease as the N-layer thickness
(CPP-MR) or N-film length (LNL) increases, and l^F(sf) does the same for
increase of the CPP-MR with increasing F-layer thickness. Spin-flipping at
M1/M2 interfaces can be described by a parameter, delta(M1/M2), which
determines the spin-flipping probability, P = 1 - exp(-delta). Increasing
delta(M1/M2) usually decreases the MR. We list measured values of these
parameters and discuss the limitations on their determinations.Comment: Invited Review, to appear in J. Phys. Cond. Matter. 50 pages, 18
figures. The new version contains additional material and revisions to
improve clarit
Tuning a Josephson junction through a quantum critical point
We tune the barrier of a Josephson junction through a zero-temperature
metal-insulator transition and study the thermodynamic behavior of the junction
in the proximity of the quantum-critical point. We examine a
short-coherence-length superconductor and a barrier (that is described by a
Falicov-Kimball model) using the local approximation and dynamical mean-field
theory. The inhomogeneous system is self-consistently solved by performing a
Fourier transformation in the planar momentum and exactly inverting the
remaining one-dimensional matrix with the renormalized perturbation expansion.
Our results show a delicate interplay between oscillations on the scale of the
Fermi wavelength and pair-field correlations on the scale of the coherence
length, variations in the current-phase relationship, and dramatic changes in
the characteristic voltage as a function of the barrier thickness or
correlation strength (which can lead to an ``intrinsic'' pinhole effect).Comment: 16 pages, 15 figures, ReVTe
Microscopic nonequilibrium theory of double-barrier Josephson junctions
We study nonequilibrium charge transport in a double-barrier Josephson
junction, including nonstationary phenomena, using the time-dependent
quasiclassical Keldysh Green's function formalism. We supplement the kinetic
equations by appropriate time-dependent boundary conditions and solve the
time-dependent problem in a number of regimes. From the solutions,
current-voltage characteristics are derived. It is understood why the
quasiparticle current can show excess current as well as deficit current and
how the subgap conductance behaves as function of junction parameters. A
time-dependent nonequilibrium contribution to the distribution function is
found to cause a non-zero averaged supercurrent even in the presence of an
applied voltage. Energy relaxation due to inelastic scattering in the
interlayer has a prominent role in determining the transport properties of
double-barrier junctions. Actual inelastic scattering parameters are derived
from experiments. It is shown as an application of the microscopic model, how
the nature of the intrinsic shunt in double-barrier junctions can be explained
in terms of energy relaxation and the opening of Andreev channels.Comment: Accepted for Phys. Rev.
Spin injection and spin accumulation in all-metal mesoscopic spin valves
We study the electrical injection and detection of spin accumulation in
lateral ferromagnetic metal-nonmagnetic metal-ferromagnetic metal (F/N/F) spin
valve devices with transparent interfaces. Different ferromagnetic metals,
permalloy (Py), cobalt (Co) and nickel (Ni), are used as electrical spin
injectors and detectors. For the nonmagnetic metal both aluminium (Al) and
copper (Cu) are used. Our multi-terminal geometry allows us to experimentally
separate the spin valve effect from other magneto resistance signals such as
the anomalous magneto resistance (AMR) and Hall effects. We find that the AMR
contribution of the ferromagnetic contacts can dominate the amplitude of the
spin valve effect, making it impossible to observe the spin valve effect in a
'conventional' measurement geometry. In a 'non local' spin valve measurement we
are able to completely isolate the spin valve signal and observe clear spin
accumulation signals at T=4.2 K as well as at room temperature (RT). For
aluminum we obtain spin relaxation lengths (lambda_{sf}) of 1.2 mu m and 600 nm
at T=4.2 K and RT respectively, whereas for copper we obtain 1.0 mu m and 350
nm. The spin relaxation times tau_{sf} in Al and Cu are compared with theory
and results obtained from giant magneto resistance (GMR), conduction electron
spin resonance (CESR), anti-weak localization and superconducting tunneling
experiments. The spin valve signals generated by the Py electrodes (alpha_F
lambda_F=0.5 [1.2] nm at RT [T=4.2 K]) are larger than the Co electrodes
(alpha_F lambda_F=0.3 [0.7] nm at RT [T=4.2 K]), whereas for Ni (alpha_F
lambda_F<0.3 nm at RT and T=4.2 K) no spin signal is observed. These values are
compared to the results obtained from GMR experiments.Comment: 16 pages, 12 figures, submitted to PR
Spintronics: Fundamentals and applications
Spintronics, or spin electronics, involves the study of active control and
manipulation of spin degrees of freedom in solid-state systems. This article
reviews the current status of this subject, including both recent advances and
well-established results. The primary focus is on the basic physical principles
underlying the generation of carrier spin polarization, spin dynamics, and
spin-polarized transport in semiconductors and metals. Spin transport differs
from charge transport in that spin is a nonconserved quantity in solids due to
spin-orbit and hyperfine coupling. The authors discuss in detail spin
decoherence mechanisms in metals and semiconductors. Various theories of spin
injection and spin-polarized transport are applied to hybrid structures
relevant to spin-based devices and fundamental studies of materials properties.
Experimental work is reviewed with the emphasis on projected applications, in
which external electric and magnetic fields and illumination by light will be
used to control spin and charge dynamics to create new functionalities not
feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes
from the published versio
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