Wearable Microfluidic Diaphragm Pressure Sensor for Health and Tactile Touch Monitoring

Flexible pressure sensors have many potential applications in wearable electronics, robotics, health monitoring, and more. In particular, liquid-metal-based sensors are especially promising as they can undergo strains of over 200% without failure. However, current liquid-metal-based strain sensors are incapable of resolving small pressure changes in the few kPa range, making them unsuitable for applications such as heart-rate monitoring, which require a much lower pressure detection resolution. In this paper, a microfluidic tactile diaphragm pressure sensor based on embedded Galinstan microchannels (70 µm width × 70 µm height) capable of resolving sub-50 Pa changes in pressure with sub-100 Pa detection limits and a response time of 90 ms is demonstrated. An embedded equivalent Wheatstone bridge circuit makes the most of tangential and radial strain fields, leading to high sensitivities of a 0.0835 kPa^(−1) change in output voltage. The Wheatstone bridge also provides temperature self-compensation, allowing for operation in the range of 20–50 °C. As examples of potential applications, a polydimethylsiloxane (PDMS) wristband with an embedded microfluidic diaphragm pressure sensor capable of real-time pulse monitoring and a PDMS glove with multiple embedded sensors to provide comprehensive tactile feedback of a human hand when touching or holding objects are demonstrated

Wearable Microfluidic Diaphragm Pressure Sensor for Health and Tactile Touch Monitoring

Flexible pressure sensors have many potential applications in wearable electronics, robotics, health monitoring, and more. In particular, liquid-metal-based sensors are especially promising as they can undergo strains of over 200% without failure. However, current liquid-metal-based strain sensors are incapable of resolving small pressure changes in the few kPa range, making them unsuitable for applications such as heart-rate monitoring, which require a much lower pressure detection resolution. In this paper, a microfluidic tactile diaphragm pressure sensor based on embedded Galinstan microchannels (70 µm width × 70 µm height) capable of resolving sub-50 Pa changes in pressure with sub-100 Pa detection limits and a response time of 90 ms is demonstrated. An embedded equivalent Wheatstone bridge circuit makes the most of tangential and radial strain fields, leading to high sensitivities of a 0.0835 kPa^(−1) change in output voltage. The Wheatstone bridge also provides temperature self-compensation, allowing for operation in the range of 20–50 °C. As examples of potential applications, a polydimethylsiloxane (PDMS) wristband with an embedded microfluidic diaphragm pressure sensor capable of real-time pulse monitoring and a PDMS glove with multiple embedded sensors to provide comprehensive tactile feedback of a human hand when touching or holding objects are demonstrated

Efficient silicon solar cells with dopant-free asymmetric heterocontacts

A salient characteristic of solar cells is their ability to subject photo-generated electrons and holes to pathways of asymmetrical conductivity-'assisting' them towards their respective contacts. All commercially available crystalline silicon (c-Si) solar cells achieve this by making use of doping in either near-surface regions or overlying silicon-based films. Despite being commonplace, this approach is hindered by several optoelectronic losses and technological limitations specific to doped silicon. A progressive approach to circumvent these issues involves the replacement of doped-silicon contacts with alternative materials which can also form 'carrier-selective' interfaces on c-Si. Here we successfully develop and implement dopant-free electron and hole carrier-selective heterocontacts using alkali metal fluorides and metal oxides, respectively, in combination with passivating intrinsic amorphous silicon interlayers, resulting in power conversion efficiencies approaching 20%. Furthermore, the simplified architectures inherent to this approach allow cell fabrication in only seven low-temperature (<= 200 degrees C), lithography-free steps. This is a marked improvement on conventional doped-silicon high-efficiency processes, and highlights potential improvements on both sides of the cost-to-performance ratio for c-Si photovoltaics