408 research outputs found
New coherent detector for terahertz radiation based on excitonic electroabsorption
We demonstrate a new technique for the coherent measurement of freeâspace THz electrical transients, based on the parallelâfield excitonic electroabsorption effect in GaAs quantum wells. A THz transient generated from a photoconductive dipole antenna is measured with a rise time of 290 fs and a full width at half maximum of 360 fs. The initial rise of the THz wave form is abrupt, and does not display the exponential leading edge apparent in waveforms measured with photoconductive techniques. The detector sensitivity is subâ100 mV/cm.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70714/2/APPLAB-61-15-1763-1.pd
Transition from electron accumulation to depletion at InGaN surfaces
The composition dependence of the Fermi-level pinning at the oxidized (0001) surfaces of n-type InxGa1âxN films (0<=x<=1) is investigated using x-ray photoemission spectroscopy. The surface Fermi-level position varies from high above the conduction band minimum (CBM) at InN surfaces to significantly below the CBM at GaN surfaces, with the transition from electron accumulation to depletion occurring at approximately x=0.3. The results are consistent with the composition dependence of the band edges with respect to the charge neutrality level
Time-resolved observation of ballistic acceleration of electrons in GaAs quantum wells
The authors have studied high-field parallel transport of photoinjected carriers in GaAs quantum wells using femtosecond optical spectroscopy. They have directly observed the transient nonequilibrium distribution functions that occur during the field-induced acceleration of the electrons. At a high field (16 kV cm-1), a nonthermal high-energy tail in the distribution function is apparent during the first 150 fs, which is due to electrons ballistically accelerated from the band edge. At later times, the authors observe the relaxation of the applied electric field due both to radiation from the accelerating carriers and from the build-up of space charge as the electron and hole gases separate.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/48929/2/ss920b31.pd
Universality and Phase Diagram around Half-filled Landau Level
Gated GaAs/AlGaAs heterostructures were used to determine the low-temperature
behavior of the two-dimensional electron gas near filling factor nu=1/2 in the
disorder-magnetic-field plane. We identify a line on which sigma_{xy} is
temperature independent, has value sigma_{xy}=0.5 (e^{2}/h), and a distinct
line on which rho_{xy}=2 (h/e^{2}). The phase boundaries between the Hall
insulator and the principal quantum Hall liquids at nu=1 and 1/3 show
levitation of the delocalized states of the first Landau levels for electrons
and composite fermions. Finally, the data suggest that there is no true
metallic phase around nu=1/2.Comment: 7 pages (Revtex), 5 figure
Absence of Floating Delocalized States in a Two-Dimensional Hole Gas
By tracking the delocalized states of the two-dimensional hole gas in a
p-type GaAs/AlGaAs heterostructure as a function of magnetic field, we mapped
out a phase diagram in the density-magnetic-field plane. We found that the
energy of the delocalized state from the lowest Landau level flattens out as
the magnetic field tends toward zero. This finding is different from that for
the two-dimensional electron system in an n-type GaAs/AlGaAs heterostructure
where delocalized states diverge in energy as B goes to zero indicating the
presence of only localized states below the Fermi energy. The possible
connection of this finding to the recently observed metal-insulator transition
at B = 0 in the two-dimensional hole gas systems is discussed.Comment: 10 pages, 4 Postscript figures, To be published in Physical Review B
(Rapid Communications) 58, Sept. 15, 199
Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material
We study the unintentional H impurities in relation to the free electron properties of state-of-the-art InN films grown by molecular beam epitaxy (MBE). Enhanced concentrations of H are revealed in the near surface regions of the films, indicating postgrowth surface contamination by H. The near surface hydrogen could not be removed upon thermal annealing and may have significant implications for the surface and bulk free electron properties of InN. The bulk free electron concentrations were found to scale with the bulk H concentrations while no distinct correlation with dislocation density could be inferred, indicating a major role of hydrogen for the unintentional conductivity in MBE InN
Topological Phase Diagram of a Two-Subband Electron System
We present a phase diagram for a two-dimensional electron system with two
populated subbands. Using a gated GaAs/AlGaAs single quantum well, we have
mapped out the phases of various quantum Hall states in the density-magnetic
filed plane. The experimental phase diagram shows a very different topology
from the conventional Landau fan diagram. We find regions of negative
differential Hall resistance which are interpreted as preliminary evidence of
the long sought reentrant quantum Hall transitions. We discuss the origins of
the anomalous topology and the negative differential Hall resistance in terms
of the Landau level and subband mixing.Comment: 4 pages, 4 figure
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