Electrical Nanoprobing of Semiconducting Carbon Nanotubes using an Atomic Force Microscope

We use an Atomic Force Microscope (AFM) tip to locally probe the electronic properties of semiconducting carbon nanotube transistors. A gold-coated AFM tip serves as a voltage or current probe in three-probe measurement setup. Using the tip as a movable current probe, we investigate the scaling of the device properties with channel length. Using the tip as a voltage probe, we study the properties of the contacts. We find that Au makes an excellent contact in the p-region, with no Schottky barrier. In the n-region large contact resistances were found which dominate the transport properties.Comment: 4 pages, 5 figure

Study of natural formation and anthropogenic change in soils for sustainable land-use

In this work, we have presented an approach to rational territorial organization of the environment with the aim of harmonizing natural, economic and socio-demographic processes. Successive stages of the action for the development of basin nature management projects are proposed by us. Design technology rational land use is implemented for one of the small river basi

RESEARCH OF PROBLEMS OF INFORMATION SUPPORT OF PROCESSES OF LIFE CYCLE OF PRODUCTS

In article results of a research of opportunities of complex introduction of information systems and technologies in the industry are stated. The concept of support of processes of life cycle of production of products in borders of the integrated uniform information environment is fered. It is proved that integration of an automated control system for production consists in progressing of level of efficiency of creation and application of high technologies in production. Organizational and economic problems of introduction of information technologies are allocated, and the complete strategy of the modern organization of process of production within a common information space is offered

Selfoscillations of Suspended Carbon Nanotubes with a Deflection Sensitive Resistance under Voltage Bias

We theoretically investigate the electro-mechanics of a Suspended Carbon Nanotube with a Deflection Sensitive Resistance subjected to a homogeneous Magnetic Field and a constant Voltage Bias. We show that, (with the exception of a singular case), for a sufficiently high magnetic field the time-independent state of charge transport through the nanotube becomes unstable to selfexcitations of the mechanical vibration accompanied by oscialltions in the voltage drop and current across the nanotube.Comment: 4 pages, 1 figur

Capacitive Spring Softening in Single-Walled Carbon Nanotube Nanoelectromechanical Resonators

We report the capacitive spring softening effect observed in single-walled carbon nanotube (SWNT) nanoelectromechanical (NEM) resonators. The nanotube resonators adopt dual-gate configuration with both bottom-gate and side-gate capable of tuning the resonance frequency through capacitive coupling. Interestingly, downward resonance frequency shifting is observed with increasing side-gate voltage, which can be attributed to the capacitive softening of spring constant. Furthermore, in-plane vibrational modes exhibit much stronger spring softening effect than out-of-plan modes. Our dual-gate design should enable the differentiation between these two types of vibrational modes, and open up new possibility for nonlinear operation of nanotube resonators.Comment: 12 pages/ 3 figure

Electromechanical instability in suspended carbon nanotubes

We have theoretically investigated electromechanical properties of freely suspended carbon nanotubes when a current is injected into the tubes using a scanning tunneling microscope. We show that a shuttle-like electromechanical instability can occur if the bias voltage exceeds a dissipation-dependent threshold value. An instability results in large amplitude vibrations of the carbon nanotube bending mode, which modify the current-voltage characteristics of the system

Photocurrent Imaging of p-n Junctions and Local Defects in Ambipolar Carbon Nanotube Transistors

We use scanning photocurrent microscopy (SPCM) to investigate the properties of internal p-n junctions as well as local defects in ambipolar carbon nanotube (CNT) transistors. Our SPCM images show strong signals near metal contacts whose polarity and positions change depending on the gate bias. SPCM images analyzed in conjunction with the overall conductance also indicate the existence and gate-dependent evolution of internal p-n junctions near contacts in the n-type operation regime. To determine the p-n junction position and the depletion width with a nanometer scale resolution, a Gaussian fit was used. We also measure the electric potential profile of CNT devices at different gate biases, which shows that both local defects and induced electric fields can be imaged using the SPCM technique. Our experiment clearly demonstrates that SPCM is a valuable tool for imaging and optimizing electrical and optoelectronic properties of CNT based devices.Comment: 5 pages, 5 figure