Metallicity and its low temperature behavior in dilute 2D carrier systems

We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in the semiconductor. We derive a leading behavior in the transport property, which is exact in the strict 2D approximation and provides a zeroth order explanation for the strength of metallicity in various 2D carrier systems. By carefully comparing the calculated full nonlinear temperature dependence of electronic resistivity at low temperatures with the corresponding asymptotic analytic form obtained in the $T/T_F \to 0$ limit, both within the RPA screened charged impurity scattering theory, we critically discuss the applicability of the linear temperature dependent correction to the low temperature resistivity in 2D semiconductor structures. We find quite generally that for charged ionized impurity scattering screened by the electronic dielectric function (within RPA or its suitable generalizations including local field corrections), the resistivity obeys the asymptotic linear form only in the extreme low temperature limit of $T/T_F \le 0.05$. We point out the experimental implications of our findings and discuss in the context of the screening theory the relative strengths of metallicity in different 2D systems.Comment: We have substantially revised this paper by adding new materials and figures including a detailed comparison to a recent experimen

Distributed Minimum Cut Approximation

We study the problem of computing approximate minimum edge cuts by distributed algorithms. We use a standard synchronous message passing model where in each round, $O(\log n)$ bits can be transmitted over each edge (a.k.a. the CONGEST model). We present a distributed algorithm that, for any weighted graph and any $\epsilon \in (0, 1)$, with high probability finds a cut of size at most $O(\epsilon^{-1}\lambda)$ in $O(D) + \tilde{O}(n^{1/2 + \epsilon})$ rounds, where $\lambda$ is the size of the minimum cut. This algorithm is based on a simple approach for analyzing random edge sampling, which we call the random layering technique. In addition, we also present another distributed algorithm, which is based on a centralized algorithm due to Matula [SODA '93], that with high probability computes a cut of size at most $(2+\epsilon)\lambda$ in $\tilde{O}((D+\sqrt{n})/\epsilon^5)$ rounds for any $\epsilon>0$. The time complexities of both of these algorithms almost match the $\tilde{\Omega}(D + \sqrt{n})$ lower bound of Das Sarma et al. [STOC '11], thus leading to an answer to an open question raised by Elkin [SIGACT-News '04] and Das Sarma et al. [STOC '11]. Furthermore, we also strengthen the lower bound of Das Sarma et al. by extending it to unweighted graphs. We show that the same lower bound also holds for unweighted multigraphs (or equivalently for weighted graphs in which $O(w\log n)$ bits can be transmitted in each round over an edge of weight $w$), even if the diameter is $D=O(\log n)$. For unweighted simple graphs, we show that even for networks of diameter $\tilde{O}(\frac{1}{\lambda}\cdot \sqrt{\frac{n}{\alpha\lambda}})$, finding an $\alpha$-approximate minimum cut in networks of edge connectivity $\lambda$ or computing an $\alpha$-approximation of the edge connectivity requires $\tilde{\Omega}(D + \sqrt{\frac{n}{\alpha\lambda}})$ rounds

Sharp increase of the effective mass near the critical density in a metallic 2D electron system

We find that at intermediate temperatures, the metallic temperature dependence of the conductivity \sigma(T) of 2D electrons in silicon is described well by a recent interaction-based theory of Zala et al. (Phys. Rev. B 64, 214204 (2001)). The tendency of the slope d\sigma/dT to diverge near the critical electron density is in agreement with the previously suggested ferromagnetic instability in this electron system. Unexpectedly, it is found to originate from the sharp enhancement of the effective mass, while the effective Lande g factor remains nearly constant and close to its value in bulk silicon

Interaction Corrections to Two-Dimensional Hole Transport in Large rsr_{s} Limit

The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_{s}$ is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter $F_{0}^{\sigma}$ determined from the experiment, however, decreases with increasing $r_{s}$ for r_{s}\agt22, a behavior unexpected from existing theoretical calculations valid for small $r_{s}$.Comment: 6 pages, 4 figure

Theory of nuclear induced spectral diffusion: Spin decoherence of phosphorus donors in Si and GaAs quantum dots

We propose a model for spectral diffusion of localized spins in semiconductors due to the dipolar fluctuations of lattice nuclear spins. Each nuclear spin flip-flop is assumed to be independent, the rate for this process being calculated by a method of moments. Our calculated spin decoherence time $T_{M}=0.64$ ms for donor electron spins in Si:P is a factor of two longer than spin echo decay measurements. For $^{31}$P nuclear spins we show that spectral diffusion is well into the motional narrowing regime. The calculation for GaAs quantum dots gives $T_{M}=10-50$ $\mu$s depending on the quantum dot size. Our theory indicates that nuclear induced spectral diffusion should not be a serious problem in developing spin-based semiconductor quantum computer architectures.Comment: 15 pages, 9 figures. Accepted for publication in Phys. Rev.

The Study of Goldstone Modes in ν\nu=2 Bilayer Quantum Hall Systems

At the filling factor $\nu$=2, the bilayer quantum Hall system has three phases, the spin-ferromagnet phase, the spin singlet phase and the canted antiferromagnet (CAF) phase, depending on the relative strength between the Zeeman energy and interlayer tunneling energy. We present a systematic method to derive the effective Hamiltonian for the Goldstone modes in these three phases. We then investigate the dispersion relations and the coherence lengths of the Goldstone modes. To explore a possible emergence of the interlayer phase coherence, we analyze the dispersion relations in the zero tunneling energy limit. We find one gapless mode with the linear dispersion relation in the CAF phase.Comment: 13 pages, no figures. One reference is added. Typos correcte

Phase diagram and influence of defects in the double perovskites

The phase diagram of the double perovskites of the type Sr_{2-x} La_x Fe Mo O_6 is analyzed, with and without disorder due to antisites. In addition to an homogeneous half metallic ferrimagnetic phase in the absence of doping and disorder, we find antiferromagnetic phases at large dopings, and other ferrimagnetic phases with lower saturation magnetization, in the presence of disorder.Comment: 4 pages, 3 postscript figures, some errata correcte

Linear in-plane magnetoconductance and spin susceptibility of a 2D electron gas on a vicinal silicon surface

In this work we have studied the parallel magnetoresistance of a 2DEG near a vicinal silicon surface. An unusual, linear magnetoconductance is observed in the fields up to $B = 15$ T, which we explain by the effect of spin olarization on impurity scattering. This linear magnetoresistance shows strong anomalies near the boundaries of the minigap in the electron spectrum of the vicinal system.Comment: (accepted to Phys. Rev. B

Solitary wave solution to the generalized nonlinear Schrodinger equation for dispersive permittivity and permeability

We present a solitary wave solution of the generalized nonlinear Schrodinger equation for dispersive permittivity and permeability using a scaling transformation and coupled amplitude-phase formulation. We have considered the third-order dispersion effect (TOD) into our model and show that soliton shift may be suppressed in a negative index material by a judicious choice of the TOD and self-steepening parameter.Comment: 6 page

T=0 Phase Diagram of the Double-Exchange Model

We present the T=0 phase diagram of the double-exchange model (ferromagnetic Kondo lattice model) for all values of the carrier concentration $n$ and Hund's couplng $J$, within dynamical mean field theory. We find that depending on the values of $n$ and $J$, the ground state is either a ferromagnet, a commensurate antiferromagnet or some other incommensurate phase with intermediate wave vectors . The antiferromagnetic phase is separated by first order phase boundaries and wide regimes of phase separation. The transition from the ferromagnetic phase to an incommensurate phase is second order.Comment: 4 pages, 5 figures. The analysis now includes incommensurate phases with arbitrary wave vectors. Correspondingly, the figures have been change