Quantitative characterization of spin-orbit torques in Pt/Co/Pt/Co/Ta/BTO heterostructures due to the magnetization azimuthal angle dependence

Substantial understanding of spin-orbit interactions in heavy-metal (HM)/ferromagnet (FM)heterostructures is crucial in developing spin-orbit torque (SOT) spintronics devices utilizing spin Hall and Rashba effects. Though the study of SOT effective field dependence on the out-of-plane magnetization angle has been relatively extensive, the understanding of in-plane magnetization angle dependence remains unknown. Here, we analytically propose a method to compute the SOT effective fields as a function of the in-plane magnetization angle using the harmonic Hall technique in perpendicular magnetic anisotropy (PMA) structures. Two different samples with PMA, a Pt/Co/Pt/Co/Ta/BaTi O3 (BTO) test sample and a Pt/Co/Pt/Co/Ta reference sample, are studied using the derived formula. Our measurements reveal that only the dampinglike field of the test sample with a BTO capping layer exhibits an in-plane magnetization angle dependence, while no angular dependence is found in the reference sample. The presence of the BTO layer in the test sample, which gives rise to a Rashba effect at the interface, is ascribed as the source of the angular dependence of the dampinglike field

Field-free spin-orbit torque switching of a perpendicular ferromagnet with Dzyaloshinskii-Moriya interaction

Leveraging on interfacial Dzyaloshinskii-Moriya interaction (DMI) induced intrinsic magnetization tilting in nanostructures, a parametric window enabling field-free spin-orbit torque (SOT) magnetization switching in a perpendicular ferromagnet is established. The critical current density (Jc) bounds for SOT switching are highly dependent on the DMI, producing a distorted diamond-shaped region bounded by the Jc-DMI curves. The widest Jc interval is found for DMI values between 0.5 mJ/m2 and 0.8 mJ/m2. Geometrical modulation, of the ferromagnetic layer, reveals that the circular structure is optimum for minimizing the switching energy while maximizing the parametric window. For all the structures investigated, the SOT induced reversal process is via domain wall nucleation and propagation, and the switching is practical at room temperature

Deterministic Spin-Orbit Torque Induced Magnetization Reversal In Pt/[Co/Ni]_n/Co/Ta Multilayer Hall Bars

Spin-orbit torque (SOT) induced by electric current has attracted extensive attention as an efficient method of controlling the magnetization in nanomagnetic structures. SOT-induced magnetization reversal is usually achieved with the aid of an in-plane bias magnetic field. In this paper, we show that by selecting a film stack with weak out-of-plane magnetic anisotropy, field-free SOT-induced switching can be achieved in micron sized multilayers. Using direct current, deterministic bipolar magnetization reversal is obtained in Pt/[Co/Ni]2/Co/Ta structures. Kerr imaging reveals that the SOT-induced magnetization switching process is completed via the nucleation of reverse domain and propagation of domain wall in the system

Simultaneous determination of effective spin-orbit torque fields in magnetic structures with in-plane anisotropy

The strength of spin-orbit torque in ferromagnetic structures is characterized by fieldlike and dampinglike effective fields. Conventionally, two distinct measurement approaches are employed to quantify the magnitude of the respective effective fields in structures with in-plane magnetic anisotropy. Here, we propose and demonstrate a self-validating method, which enables simultaneous quantification of both the fieldlike and dampinglike terms in structures with in-plane magnetic anisotropy. An analytical expression is derived and validated by harmonic Hall resistance measurement. Both the fieldlike and dampinglike effective fields are extracted from a single measurement using the derived fitting functions for the second harmonic Hall resistance. The first harmonic Hall resistance acts as a reference to confirm that the experimental parameters are consistent with the derived equations

Patterned ferromagnetic meso and nano structures

Ph.DDOCTOR OF PHILOSOPH

Dzyaloshinskii–Moriya interaction induced domain wall depinning anomaly in ferromagnetic nanowire

Magnetic domain wall positional manipulation is usually through the introduction of potential trap. In this work, we show that the presence of interfacial Dzyaloshinkii–Moriya interaction leads to a different static depinning field for Néel domain walls with the same handedness in a notched magnetic nanowire. The difference in static depinning field is due to the Néel domain wall spin orientation. The spin orientation leads to different torques being exerted on the localized magnetic moments. This inherently imposes a spin orientation dependent diode-like behavior for domain walls in a notched nanowire. An equation which relates the difference in static depinning field to the notch geometry is derived. Micromagnetic simulation with varying damping constant reveals the influence of damping constant on the strength of depinning anomaly.NRF (Natl Research Foundation, S’pore)MOE (Min. of Education, S’pore

Reconfigurable logic via gate controlled domain wall trajectory in magnetic network structure

An all-magnetic logic scheme has the advantages of being non-volatile and energy efficient over the conventional transistor based logic devices. In this work, we present a reconfigurable magnetic logic device which is capable of performing all basic logic operations in a single device. The device exploits the deterministic trajectory of domain wall (DW) in ferromagnetic asymmetric branch structure for obtaining different output combinations. The programmability of the device is achieved by using a current-controlled magnetic gate, which generates a local Oersted field. The field generated at the magnetic gate influences the trajectory of the DW within the structure by exploiting its inherent transverse charge distribution. DW transformation from vortex to transverse configuration close to the output branch plays a pivotal role in governing the DW chirality and hence the output. By simply switching the current direction through the magnetic gate, two universal logic gate functionalities can be obtained in this device. Using magnetic force microscopy imaging and magnetoresistance measurements, all basic logic functionalities are demonstrated.NRF (Natl Research Foundation, S’pore)Published versio

Confined spin-wave characteristics in magnetic nanowire ensembles approaching the ultrathin regime

We present a comprehensive study on the high-frequency magnetization dynamics of homogeneously patterned ultrathin magnetic nanowire arrays. The backward volume magnetostatic spin-wave (BVMSW) and Damon-Eshbach (DE) configurations are studied along with the intermediate transition states to understand the edge mode’s evolution in depth. We find at the sub-10-nm ultrathin regime the dynamics are heavily influenced by geometrical parameters such as magnetic layer thickness (tFM), demagnetization factors, and interfaces. Critical entities such as field separation δH between uniform to edge mode increase linearly with 1/tFM, while the edge saturation field Hedgesat increase monotonically with increasing tFM, revealing excellent agreement between findings from experimental and micromagnetic simulations. The dynamics are less sensitive to the width of the nanowire but very sensitive to the adjacent material or the interface of the ferromagnet, especially at the ultrathin limits