Composition, structure and photoelectrochemical characterization of electrodeposited Cu4SnS4 thin films

Cu4SnS4 thin films were deposited on indium tin oxide glass substrate using the electrodeposition method. The thin films were obtained in a reaction bath at pH values of 1.1, 1.3, 1.5, 1.7 and 2.0. The structure and chemical composition of the thin films were studied by X-ray diffraction and energy dispersive analysis of X-ray, respectively. The photoresponse of the deposited films and their conduction types were evaluated using the photoelectrochemical technique. The X-ray diffraction data indicated that the of peaks increased as the pH was increased up to 1.5. However, the total Cu4SnS4 peaks reduced to three peaks as the pH was further increased to 2. Based on the energy dispersive analysis of X-ray analysis, the composition ratio Cu:Sn:S of the films was varied with pH. When the pH was lower or higher than pH 1.5, the content of Cu and Sn is slightly greater than that of elemental S. Therefore, the pH had significant influence on the composition of the deposited films

A cyclic voltammetric synthesis of ZnS thin films using triethanolamine as a complexing agent

ZnS thin films have been synthesized by means of cyclic voltammetry technique. An aqueous solution of zinc chloride was used as Zn2+ source, sodium thiosulfate as S2- source and triethanolamine as complexing agent for depositing ZnS thin films. The influence of complexing agent on the formation and properties of zinc sulphide thin films was investigated. Structure and surface morphology of thin films were characterized by X-ray diffraction and atomic force microscopy, respectively. The band gap energy and type of optical transition were determined from optical absorbance data. The band gap energy varies from 1.7 to 2.5 eV for the films prepared at different amounts of triethanolamine. XRD data indicate that the thin film deposited in presence of triethanolamine is polycrystalline in nature with cubic phase. Increase in amount of triethanolamine (5 ml) in electrochemical bath leads film is homogeneous, well covered to the substrate and exhibits higher absorption characteristic. We can conclude that the amount of complexing agent could affect the structure, surface morphology and optical properties of deposits. The good quality of zinc sulphide thin film could be prepared in the presence of triethanolamine

XRD and AFM studies of ZnS thin films produced by electrodeposition method

The structure and morphology of ZnS thin films were investigated. ZnS thin films have been grown on an indium tin oxide glass substrate by electrodeposition method using zinc chloride and sodium thiosulfate solutions at room temperature. The X-ray diffraction patterns confirm the presence of ZnS thin films. From the AFM images, grain size decreases as the cathodic potential becomes more negative (from −1.1 to −1.3 V) at various deposition periods. Comparison between all the samples reveals that the intensity of the peaks increased, indicating better crystalline phase for the films deposited at −1.1 V. These films show homogeneous and uniform distribution according to AFM images. On the other hand, XRD analysis shows that the number of ZnS peaks increased as deposition time was increased from 15 to 30 min at −1.1 V. The AFM images show thicker films to be formed at −1.1 V indicating more favourable condition for the formation of ZnS thin films

Deposition and characterization of ZnS thin films using chemical bath deposition method in the presence of sodium tartrate as complexing agent.

ZnS thin films were deposited on indium tin oxide glass substrate using the chemical bath deposition method. The deposited films were characterized by X-ray diffraction and atomic force microscopy. The influence of bath temperature on the structure and morphology of the thin films was investigated at three different bath temperatures of 60, 70 and 80 °C in the presence of sodium tartrate as a complexing agent. The XRD results indicated that the deposited ZnS thin films exhibited a polycrystalline cubic structure. The number of ZnS peaks increased from three to four peaks as the bath temperature was increased from 60 to 80 °C based on the XRD patterns. From the AFM measurements, the film thickness and surface roughness were found to be dependent on the bath temperature. The grain size increased as the bath temperature was increased from 60 to 80 °C

Effects of deposition period on the chemical bath deposited Cu4SnS4 thin films

Cu4SnS4 thin films were prepared by simple chemical bath deposition technique. The influence of deposition period on the structural, morphological and optical properties of films was studied. The films were characterized using X-ray diffraction, atomic force microscopy and UV-Vis Spectrophotometer. X-ray diffraction patterns indicated that the films were polycrystalline with prominent peak attributed to (221) plane of orthorhombic crystal structure. The films prepared at 80 min showed significant increased in the intensity of all diffractions. According to AFM images, these films indicated that the surface of substrate was covered completely. The obtained films also produced higher absorption characteristics when compared to the films prepared at other deposition periods based on optical absorption studies. The band gap values of films deposited at different deposition periods were in the range of 1.6-2.1 eV. Deposition for 80 min was found to be the optimum condition to produce good quality thin films under the current conditions

Structural and morphological characterization of chemical bath deposition of FeS thin films in the presence of sodium tartrate as a complexing agent.

In this paper, we presented the results of X-ray diffraction and scanning electron microscopy of the ironsulphide thin films prepared using a simple and cost effective chemical bath deposition method. The effectsof solution concentration and pH on the structural and morphological properties of thin films were studiedin the presence of sodium tartrate as a complexing agent. The thin films deposited using higher solutionconcentration showed higher number of FeS peaks and larger grain size according to X-ray diffraction andscanning electron microscopy results, respectively as compared with other solution concentrations. On theother hand, when the thin films were deposited at higher pH, the number of FeS peaks reduced to two peaksand the films showed incomplete coverage of material over the surface of the substrate with the smaller grainsize

Sem, Edax and UV-visible studies on the properties of Cu2S thin films.

Cu2S thin films were produced by simple chemical bath deposition technique at various bath temperatures ranging from 55 °C to 75 °C. For chemical bath deposited thin films, copper sulphate solution was employed as Cu2+ source while thiourea solution provided the S2- ions. The morphological, compositional and optical properties were investigated using scanning electron microscopy, energy dispersive analysis of X-ray and UV-Visible spectrophotometer, respectively. The grain size and average atomic ratio of Cu/S increased when the bath temperature was increased from 55 °C to 75 °C. The films deposited at 75 °C indicated high absorbance as compared with other bath temperatures

SEM, EDAX AND UV-VISIBLE STUDIES ON THE PROPERTIES OF Cu 2 S THIN FILMS

Cu 2 S thin films were produced by simple chemical bath deposition technique at various bath temperatures ranging from 55 °C to 75 °C. For chemical bath deposited thin films, copper sulphate solution was employed as Cu 2+ source while thiourea solution provided the S 2-ions. The morphological, compositional and optical properties were investigated using scanning electron microscopy, energy dispersive analysis of X-ray and UV-Visible spectrophotometer, respectively. The grain size and average atomic ratio of Cu/S increased when the bath temperature was increased from 55 °C to 75 °C. The films deposited at 75 °C indicated high absorbance as compared with other bath temperatures

Chemical bath deposition of nickel sulphide (Ni4S3) thin films

Thin films of nickel sulphide were deposited from aqueous baths on indium tin oxide glass substrate. The chemical bath contained nickel sulphate, sodium thiosulfate and triethanolamine solutions. The aim of the present study was to analyze the different experimental conditions to prepare Ni4S3 thin films using chemical bath deposition technique. The structural, morphological and optical properties of nickel sulphide thin films were obtained by X-ray diffraction, atomic force microscopy and UV-Vis Spectrophotometer will be presented. The properties of the films varied with the variation in the deposition parameters. The films deposited at longer deposition time using lower concentration in more acidic medium showed improved crystallinity, good uniformity and better adhesion to the substrate. Films showed band gap of 0.35 eV and exhibited p-type semiconductor behaviour

Influence of bath temperature and PH value on properties of chemically deposited CU4SNS4 thin films.

Thin films of Cu4SnS4 semiconductors were prepared by chemical bath deposition technique in aqueous solutions. The effects of various bath temperatures (40, 50 and 60 °C) and pH values (pH 0.5, pH 1.0 and pH 1.5) on growth of films were reported. The structure and morphology characteristics of thin films of Cu4SnS4 grown on indium tin oxide glass substrates were investigated by X-ray diffraction and atomic force microscopy techniques. The optical properties were measured to determine the transition type and band gap value. The thin films produced were found to be polycrystalline with orthorhombic structure. The X-ray diffraction data showed that the most intense peak at 20 = 30.2° which belongs to (221) plate of Cu4SnS4. The films deposited at 50 °C were found to have the best photoresponse activity and smaller crystal size. At pH 1.5, the film showed well-covered entire substrate surface and the highest absorption values in AFM and optical study, respectively. The best condition to prepare good quality thin films can be carried out at 50 °C with pH 1.5. The bandgap value was found to be 1.4 eV with direct transition