Research Notes : United States : Evaluation of soybean germplasm for stress tolerance biological efficiency : To evaluate soybean germplasm and cultivars for stress tolerance toward : Moisture Stress

Seventeen soybean genotypes were screened in a laboratory and growth-chamber experiment for water-stress tolerance characteristics. Three osmotic concentrations (0, -0.3 and -0.5 MPa) were used in an 8-day germination test conducted in the laboratory at Alabama A&M University. The Promptness Index (PI) and Germination Stress Index (GSI) were calculated (Bouslama and Schapaugh, 1984)

Research Notes : United States : Evaluation of soybean germplasm for stress tolerance biological efficiency : To evaluate soybean germplasm and cultivars for stress tolerance toward : Diseases

Screening of improved soybean lines from Alabama A&M University for multiple resistance against bacterial blight, stem canker, and soybean cyst nematode in the greenhouse and in the field continued at Alabama A&M University. Lines obtained from Virginia State University in MG IV (PI 339984, PI 408039, PI 80837); MG V (PI 96089, PI 123440, PI L-76-0132, PI L-77-0049, \u27Hill\u27, \u27Essex\u27); MG VI (FC 31665, PI 407868C, PI 159322, PI 416937, PI 379621, PI 221713, PI 230978, \u27Lee\u27); MG VII (PI 423911, PI 229358); and MG VIII (PI 417134, PI 417063, PI 417061, PI 416893) were screened. Initial results indicated PI L76-0049 is resistant to bacterial blight, PI 159322 and PI 230978 are resistant to soybean cyst nematode (race 3 and 5), and PI 417061 has multiple resistance to bacterial blight and stem canker

Research Notes : United States : Evaluation of soybean germplasm for stress tolerance and biological efficiency towards : Diseases

A field study was conducted for screening and selection of improved soybean germplasm for disease resistance in 1986. The soybean crossing block consisted of 207 germplasm entries screened at flowering and at maturity. One hundred and one were resistant and moderately resistant to bacterial blight (BB)

Research Notes : United States : Evaluation of soybean germplasm for stress tolerance and biological efficiency toward : Moisture Stress

Three soybean cultivars, \u27Lee-74\u27, \u27Wright\u27, and \u27RA 401\u27, were subjected to 100% (control), 75%, and 50% of field capacity during vegetative (Vl), flowering (R2), and pod-filling (R4) stages in greenhouse and field studies. Stress applied at R2 significantly reduced the yield in the green-house, while in the field, the maximum reduction was observed when the plants were subjected to stress at R4. Stress during Vl reduced the yield components less than stress applied during R2 or R4 stages in both studies

Research Notes : United States : Evaluation of soybean germplasm for stress tolerance and biological efficiency : To evaluate soybean germplasm for biological efficiency in - Nitrogen Fixation

Twenty commercial soybean cultivars from maturity groups IV through VIII were screened for nitrogen-fixation in a growth chamber using Rhizobium strains 3IlB 6,122 and combination of 6 and 122. The data on nodule number, nodule weight, shoot fresh weight, shoot dry weight, and acetylene reduction were recorded. Among twenty cultivars, \u27Lee 74\u27 (MG IV), \u27Bay\u27 (MG V), and \u27Essex\u27 (MG V) were identified as high N-fixers, based on more nodules and high acetylene reduction

Dual-color emitting quantum-dot-quantum-well CdSe-ZnS heteronanocrystals hybridized on InGaN/GaN light emitting diodes for high-quality white light generation

Cataloged from PDF version of article.We report white light generation by hybridizing green-red emitting (CdSe)ZnS/CdSe (core)shell/shell quantum-dot-quantum-well heteronanocrystals on blue InGaN/GaN light emitting diodes with the photometric properties of tristimulus coordinates (x,y)=(0.36,0.30), luminous efficacy of optical radiation LE=278 lm/W, correlated color temperature CCT=3929 K, and color-rendering index CRI=75.1. We present the photometric analysis and the quantum mechanical design of these dual-color emitting heteronanocrystals synthesized to achieve high-quality white light when hybridized on light emitting diodes. Using such multicolor emitting heteronanocrystals facilitates simple device implementation while providing good photometric properties. (C) 2008 American Institute of Physics

Multi-layered CdSe/ZnS/CdSe heteronanocrystals to generate and tune white light

[No abstract available

Tuning shades of white light with multi-color quantum-dot-quantum-well emitters based on onion-like CdSe-ZnS heteronanocrystals

We present white light generation controlled and tuned by multi-color quantum-dot-quantum-well emitters made of onion-like CdSe/ZnS/CdSe core/shell/shell heteronanocrystals integrated on InGaN/GaN light-emitting diodes (LEDs). We demonstrate hybrid white LEDs with (x, y) tristimulus coordinates tuned from (0.26, 0.33) to (0.37, 0.36) and correlated color temperatures from 27 413 to 4192 K by controlling the number of their integrated red-green-emitting heteronanocrystals. We investigate the modification of in-film emission from these multi-layered heteronanocrystals with respect to their in-solution emission, which plays a significant role in hybrid LED applications. Our proof-of-principle experiments indicate that these complex heteronanocrystals hold promise for use as nanoluminophors in future hybrid white LEDs. © IOP Publishing Ltd

Surface-state emission enhancement in white-luminophor CdS nanocrystals using localized plasmon coupling

[No abstract available

Selective enhancement of surface-state emission and simultaneous quenching of interband transition in white-luminophor CdS nanocrystals using localized plasmon coupling

We propose and demonstrate the controlled modification and selective enhancement of surface-state emission in white-luminophor CdS nanocrystals (NCs) by plasmon-coupling them with proximal metal nanostructures. By carefully designing nano-Ag films to match their localized plasmon resonance spectrally with the surface-state emission peak of CdS NCs, we experimentally show that the surface-state emission is substantially enhanced in the visible wavelength, while the interband (band-edge) transition at the shorter wavelength far away from the plasmon resonance is simultaneously significantly suppressed. With such plasmon tuning and consequent strong plasmon coupling specifically for the surface-state transitions, the surface-state emission is made stronger than the band-edge emission. This corresponds to an enhancement factor of 12.7-fold in the ratio of the surface-state peak emission to the band-edge peak emission of the plasmon-coupled film sample compared with that in solution. Such a plasmonic engineering of surface-state emission in trap-rich CdS white nanoluminophors holds great promise for future solid-state lighting. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft