24 research outputs found
Mercury in the country's bay bolete [Xerocomus badius] mushrooms
Oznaczono zawartość rtęci ogółem w owocnikach podgrzybka brunatnego oraz podłożu glebowym z trzech przestrzennie odległych od siebie miejsc w kraju - okolic miejscowości Mojusz (woj. pomorskie), nadleśnictwa Turek (woj. wielkopolskie) i Lasów Starachowickich (woj. świętokrzyskie). Podgrzybek brunatny zawierał niedużo rtęci, tj. w kapeluszach przeciętnie notowano 0,33±0,16 (Mojusz), 0,05±0,03 (Turek) i 0,12±0,04 µg/g masy suchej (Lipie), a w trzonach 0,23±0,12 (Mojusz), 0,03±0,02 (Turek) i 0,08±0,02 (Lipie) µg/g ms. Także gleba leśna na badanych obszarach tylko w małym stopniu była zanieczyszczona rtęcią. Wierzchnia warstwa (0-10 cm) gleby w okolicy Mojuszu, Lipia i Turka zawierała rtęć w ilości, średnio: 0,11±0,09, 0,14±0,05 i 0,05±0,01 µg/g ms, a wartość mediany wyniosła, odpowiednio: 0,053, 0,15 i 0,05 µg/g ms. Gleba na terenie Lasów Starachowickich pozostawała mocniej zanieczyszczona rtęcią w porównaniu z pozostałymi dwoma miejscami (p < 0,05). Owocniki podgrzybka z terenu gminy Sierakowice cechowała niemal czterokrotnie większa wartość współczynnika bionagromadzania (BCF) rtęci niż te z obszaru nadleśnictwa Turek czy Lasów Starachowickich. Zaobserwowaną różnicę można przypuszczalnie tłumaczyć różną biodostępnością rtęci z podłoża dla podgrzybka brunatnego pomiędzy badanymi stanowiskami. Lepsza biodostępność rtęci istotnie wpływała na zawartość tego metalu w podgrzybkach brunatnych w okolicy miejscowości Mojusz (gmina Sierakowice).Total mercury content have been determined in fruiting bodies of Bay Bolete and its underlying soil substrate collected from three spatially distant sites of the country - outskirts of the Mojusz village (Sierakowice Commune, Pomorskie Voivodeship), at the forest inspectorate Turek (Wielkopolskie Voiv.) and near the Lipie village at the Starachowickie forests (Świętokrzyskie Voiv.). Bay Bolete showed small mercury content, i.e. in caps on the average were 0.33±0.16 (Mojusz), 0.05±0.03 (Turek) and 0.12±0.04 µg/g dry weight (Lipie), and in stipes were 0.23±0.12 (Mojusz), 0.03±0.02 (Turek) and 0.08±0.02 (Lipie) µg/g dw. In addition, forest soil at the sites surveyed remained only slightly contaminated with mercury. Surface soil layer (0-10 cm) at the Mojusz, Lipie and Turek sites on the average contained mercury at concentration of 0.11±0.09, 0.14±0.05 and 0.05±0.01 µg/g dw, and median values were 0.053, 0.15 and 0,05 µg/g ms, respectively. Soil at the Lasów Starachowickie forests remained somehow more contaminated with mercury when compared to two other sites surveyed (p < 0.05). The fruiting bodies of Bay Bolete from the area of the Sierakowice Commune characterized were by early four-fold greater value of bioconcentration factor (BCF) of mercury when compared to these from the forest inspectorate Turek or the Starachowickie forests. Variances observed probably explained could be due to different mercury bioavailability to Bay Bolete at the sites surveyed. Enhanced mercury bioavailability highly influenced this element content of Bay Bolete at the Mojusz (Sierakowice Commune) site
Silicon photomultiplier gain compensation algorithm in multidetector measurements
The paper stresses the issue of strong temperature influence on the gain of a Silicon Photomultiplier (SiPM). High sensitivity of the detector to light (single photons) requires stable parameters during measurement, including gain. The paper presents a method of compensating the change of gain caused by temperature variations, by adjusting a suitable voltage bias provided by a precise power module. The methodology of the research takes in account applications with a large number of SiPMs (20 thousand), explains the challenges and presents the results of the gain stabilization algorithm
Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper
Method of signal detection from silicon photomultipliers using fully differential Charge to Time Converter and fast shaper
Development of Monolithic Active Pixel Sensor in SOI Technology fabricated on the wafer with thick device layer
TSSOI as an efficient tool for diagnostics of SOI technology in Institute of Electron Technology
This paper reports a test structure for characterization of a new technology combining a standard CMOS process with pixel detector manufacturing technique. These processes are combined on a single thick-_lm SOI wafer. Preliminary results of the measurements performed on both MOS SOI transistors and dedicated SOI test structures are described in detail
Development of a Monolithic Active Pixel Sensor using SOI Technology with a Thick Device Layer
SOI active pixel detectors of ionizing radiation - Technology and design development
This paper concerns the development of a novel monolithic active pixel radiation sensor based on SOI technology. In this device, the sensitive volume corresponds to a high resistivity SOI "handle" wafer and the front-end CMOS electronics is integrated in the SOI device layer. Pixel test matrices have been manufactured and are under extensive characterization. The conceptual design, together with architecture and technology issues is addressed; the latest experimental results are reported