Inelastic relaxation and noise temperature in S/N/S junctions

We studied electronic relaxation in long diffusive superconductor / normal metal / superconductor (S/N/S) junctions by means of current noise and transport measurements down to very low temperature (100mK). Samples with normal metal lengths of 4, 10 and 60 micrometer have been investigated. In all samples the shot noise increases very rapidly with the voltage. This is interpreted in terms of enhanced heating of the electron gas confined between the two S/N interfaces. Experimental results are analyzed quantitatively taking into account electron-phonon interaction and heat transfer through the S/N interfaces. Transport measurements reveal that in all samples the two S/N interfaces are connected incoherently, as shown by the reentrance of the resistance at low temperature. The complementarity of noise and transport measurements allows us to show that the energy dependence of the reentrance at low voltage is essentially due to the increasing effective temperature of the quasiparticles in the normal metal.Comment: 5 pages, 4 figures, to be published in EPJ

Conductance statistics in small insulating GaAs:Si wires at low temperature. II. Experimental study

We have observed reproducible conductance fluctuations at low temperature in a small GaAs:Si wire driven across the Anderson transition by the application of a gate voltage. We analyse quantitatively the log-normal conductance statistics in terms of truncated quantum fluctuations. Quantum fluctuations due to small changes of the electron energy (controlled by the gate voltage) cannot develop fully due to identified geometrical fluctuations of the resistor network describing the hopping through the sample. The evolution of the fluctuations versus electron energy and magnetic field shows that the fluctuations are non-ergodic, except in the critical insulating region of the Anderson transition, where the localization length is larger than the distance between Si impurities. The mean magnetoconductance is in good accordance with simulations based on the Forward-Directed-Paths analysis, i.e. it saturates to ${\rm ln} (\sigma (H>1)/\sigma (0))\simeq 1,$ as $\sigma (0)$ decreases over orders of magnitude in the strongly localized regime.Comment: Email contact: [email protected]

Proximity effect in planar TiN-Silicon junctions

We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for the Schottky barrier. At low energies, the subgap conductance is enhanced due to coherent backscattering of the electrons towards the interface by disorder in the silicon (''reflectionless tunneling''). This Zero Bias Anomaly (ZBA) is destroyed by the temperature or the magnetic field above 250mK or 0.04T respectively. The overall differential resistance behavior (vs temperature and voltage) is compared to existing theories and values for the depairing rate and the barrier transmittance are extracted. Such an analysis leads us to introduce an effective temperature for the electrons and to discuss heat dissipation through the SIN interface.Comment: 23 pages, 6 figures, added references and minor corrections. Accepted to Journal of Low Temperature Physic

Mesoscopic transition in the shot noise of diffusive S/N/S junctions

We experimentally investigated the current noise in diffusive Superconductor/Normal metal/Superconductor junctions with lengths between the superconducting coherence length xi_Delta and the phase coherence length L_Phi of the normal metal (xi_Delta < L < L_Phi). We measured the shot noise over a large range of energy covering both the regimes of coherent and incoherent multiple Andreev reflections. The transition between these two regimes occurs at the Thouless energy where a pronounced minimum in the current noise density is observed. Above the Thouless energy, in the regime of incoherent multiple Andreev reflections, the noise is strongly enhanced compared to a normal junction and grows linearly with the bias voltage. Semi-classical theory describes the experimental results accurately, when taking into account the voltage dependence of the resistance which reflects the proximity effect. Below the Thouless energy, the shot noise diverges with decreasing voltage which may indicate the coherent transfer of multiple charges.Comment: 5 pages, 5 figures, accepted for publication in Phys. Rev. B, Rapid Communicatio

Doubled Full Shot Noise in Quantum Coherent Superconductor - Semiconductor Junctions

We performed low temperature shot noise measurements in Superconductor (TiN) - strongly disordered normal metal (heavily doped Si) weakly transparent junctions. We show that the conductance has a maximum due to coherent multiple reflections at low energy and that shot noise is then twice the Poisson noise (S=4eI). The shot noise changes to the normal value (S=2eI) due to a large quasiparticle contribution.Comment: published in Physical Review Letter

A simple and controlled single electron transistor based on doping modulation in silicon nanowires

A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel of the transistor is the Coulomb island at low temperature. Two silicon nitride spacers deposited on each side of the gate create a modulation of doping along the nanowire that creates tunnel barriers. Such barriers are fixed and controlled, like in metallic SETs. The period of the Coulomb oscillations is set by the gate capacitance of the transistor and therefore controlled by lithography. The source and drain capacitances have also been characterized. This design could be used to build more complex SET devices.Comment: to be published in Applied Physics Letter

Proximity effect in planar Superconductor/Semiconductor junction

We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier). As the temperature is lowered, the resistance increases as expected in SIN junction. Around 300 mK, the resistance shows a maximum and decreases at lower temperature. This observed behavior is due to coherent backscattering towards the interface by disorder in Silicon ("Reflectionless tunneling"). This effect is also observed in the voltage dependence of the resistance (Zero Bias Anomaly) at low temperature (T<300 mK). The overall resistance behavior (in both its temperature and voltage dependence) is compared to existing theories and values for the depairing rate, the barrier resistance and the effective carrier temperature are extracted.Comment: Submitted to LT22, Helsinki - August 1999, phbauth.cls include