14 research outputs found
Magnetic Dirac semimetal state of (Mn,Ge)BiTe
For quantum electronics, the possibility to finely tune the properties of
magnetic topological insulators (TIs) is a key issue. We studied solid
solutions between two isostructural Z TIs, magnetic MnBiTe and
nonmagnetic GeBiTe, with Z invariants of 1;000 and 1;001,
respectively. For high-quality, large mixed crystals of
GeMnBiTe, we observed linear x-dependent magnetic
properties, composition-independent pairwise exchange interactions along with
an easy magnetization axis. The bulk band gap gradually decreases to zero for
from 0 to 0.4, before reopening for , evidencing topological phase
transitions (TPTs) between topologically nontrivial phases and the semimetal
state. The TPTs are driven purely by the variation of orbital contributions. By
tracing the x-dependent contribution to the states near the fundamental
gap, the effective spin-orbit coupling variation is extracted. As varies,
the maximum of this contribution switches from the valence to the conduction
band, thereby driving two TPTs. The gapless state observed at closely
resembles a Dirac semimetal above the Neel temperature and shows a magnetic gap
below, which is clearly visible in raw photoemission data. The observed
behavior of the GeMnBiTe system thereby demonstrates an
ability to precisely control topological and magnetic properties of TIs
High-temperature quantum oscillations of the Hall resistance in bulk Bi2Se3
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Mechanistic studies of gas reactions with multicomponent solids : what can we learn by combining NAP XPS and atomic resolution STEM/EDX?
Direct Spectroscopic Evidence of Magnetic Proximity Effect in MoS2 Monolayer on Graphene/Co
A magnetic field modifies optical properties and provides valley splitting in a molybdenum disulfide (MoS2) monolayer. Here we demonstrate a scalable approach to the epitaxial synthesis of MoS2 monolayer on a magnetic graphene/Co system. Using spin- and angle-resolved photoemission spectroscopy we observe a magnetic proximity effect that causes a 20 meV spin-splitting at the (Gamma) over bar point and canting of spins at the (K) over bar point in the valence band toward the in-plane direction of cobalt magnetization. Our density functional theory calculations reveal that the in-plane spin component at (K) over bar is localized on Co atoms in the valence band, while in the conduction band it is localized on the MoS2 layer. The calculations also predict a 16 meV spin-splitting at the (Gamma) over bar point and 8 meV (K) over bar-(K) over bar' valley asymmetry for an out-of-plane magnetization. These findings suggest control over optical transitions in MoS2 via Co magnetization. Our estimations show that the magnetic proximity effect is equivalent to the action of the magnetic field as large as 100 T