5 research outputs found
Highly Efficient and Anomalous Charge Transfer in van der Waals Trilayer Semiconductors
Two-dimensional
materials, such as graphene and monolayer transition metal dichalcogenides,
allow the fabrication of multilayer structures without lattice matching
restriction. A central issue in developing such artificial materials
is to understand and control the interlayer electron transfer process,
which plays a key role in harnessing their emergent properties. Recent
photoluminescence and transient absorption measurements revealed that
the electron transfer in heterobilayers occurs on ultrafast time scales.
However, there is still a lack of fundamental understanding on how
this process can be so efficient at van der Waals interfaces. Here
we show evidence suggesting the coherent nature of such interlayer
electron transfer. In a trilayer of MoS<sub>2</sub>–WS<sub>2</sub>–MoSe<sub>2</sub>, electrons excited in MoSe<sub>2</sub> transfer to MoS<sub>2</sub> in about one picosecond. Surprisingly,
these electrons do not populate the middle WS<sub>2</sub> layer during
this process. Calculations showed the coherent nature of the charge
transfer and reproduced the measured electron transfer time. The hole
transfer from MoS<sub>2</sub> to MoSe<sub>2</sub> is also found to
be efficient and ultrafast. The separation of electrons and holes
extends their lifetimes to more than one nanosecond, suggesting potential
applications of such multilayer structures in optoelectronics
Ultrafast Interlayer Electron Transfer in Incommensurate Transition Metal Dichalcogenide Homobilayers
Two-dimensional
materials, such as graphene, transition metal dichalcogenides,
and phosphorene, can be used to construct van der Waals multilayer
structures. This approach has shown potentials to produce new materials
that combine novel properties of the participating individual layers.
One key requirement for effectively harnessing emergent properties
of these materials is electronic connection of the involved atomic
layers through efficient interlayer charge or energy transfer. Recently,
ultrafast charge transfer on a time scale shorter than 100 fs has
been observed in several van der Waals bilayer heterostructures formed
by two different materials. However, information on the transfer between
two atomic layers of the same type is rare. Because these homobilayers
are essential elements in constructing multilayer structures with
desired optoelectronic properties, efficient interlayer transfer is
highly desired. Here we show that electron transfer between two monolayers
of MoSe<sub>2</sub> occurs on a picosecond time scale. Even faster
transfer was observed in homobilayers of WS<sub>2</sub> and WSe<sub>2</sub>. The samples were fabricated by manually stacking two exfoliated
monolayer flakes. By adding a graphene layer as a fast carrier recombination
channel for one of the two monolayers, the transfer of the photoexcited
carriers from the populated to the drained monolayers was time-resolved
by femtosecond transient absorption measurements. The observed efficient
interlayer carrier transfer indicates that such homobilayers can be
used in van der Waals multilayers to enhance their optical absorption
without significantly compromising the interlayer transport performance.
Our results also provide valuable information for understanding interlayer
charge transfer in heterostructures
Charge Transfer Exciton and Spin Flipping at Organic–Transition-Metal Dichalcogenide Interfaces
Two-dimensional
transition-metal dichalcogenides (TMD) can be combined
with other materials such as organic small molecules to form hybrid
van der Waals heterostructures. Because of different properties possessed
by these two materials, the hybrid interface can exhibit properties
that cannot be found in either of the materials. In this work, the
zinc phthalocyanine (ZnPc)–molybdenum disulfide (MoS<sub>2</sub>) interface is used as a model system to study the charge transfer
at these interfaces. It is found that the optically excited singlet
exciton in ZnPc transfers its electron to MoS<sub>2</sub> in 80 fs
after photoexcitation to form a charge transfer exciton. However,
back electron transfer occurs on the time scale of ∼1–100
ps, which results in the formation of a triplet exciton in the ZnPc
layer. This relatively fast singlet–triplet transition is feasible
because of the large singlet–triplet splitting in organic materials
and the strong spin–orbit coupling in TMD crystals. The back
electron transfer would reduce the yield of free carrier generation
at the heterojunction if it is not avoided. On the other hand, the
spin-selective back electron transfer could be used to manipulate
electron spin in hybrid electronic devices
Photocarrier Transfer across Monolayer MoS<sub>2</sub>–MoSe<sub>2</sub> Lateral Heterojunctions
In-plane heterojuctions formed from
two monolayer semiconductors
represent the finest control of electrons in condensed matter and
have attracted significant interest. Various device studies have shown
the effectiveness of such structures to control electronic processes,
illustrating their potentials for electronic and optoelectronic applications.
However, information about the physical mechanisms of charge carrier
transfer across the junctions is still rare, mainly due to the lack
of adequate experimental techniques. Here we show that transient absorption
measurements with high spatial and temporal resolution can be used
to directly monitor such transfer processes. We studied MoS<sub>2</sub>–MoSe<sub>2</sub> in-plane heterostructures fabricated by
chemical vapor deposition and lithographic patterning followed by
laser-generated vapor sulfurization. Transient absorption measurements
in reflection geometry revealed evidence of exciton transfer from
MoS<sub>2</sub> to MoSe<sub>2</sub>. By comparing the experimental
data with a simulation, we extracted an exciton transfer velocity
of 10<sup>4</sup> m s<sup>–1</sup>. These results provide valuable
information for understanding and controlling in-plane carrier transfer
in two-dimensional lateral heterostructures for their electronic and
optoelectronic applications
Additional file 1 of iPSC-derived PSEN2 (N141I) astrocytes and microglia exhibit a primed inflammatory phenotype
Additional file 1: Supplementary Methods. Table S1. Primary antibodies used for immunofluorescence. Table S2. Secondary antibodies used for immunofluorescence. Fig. S1. Sanger sequencing chromatograms showing APOE genotyping of codon 112 (rs429358) and codon 158 (rs7412) for all iPSC lines. Yellow highlight indicates the position of the single nucleotide polymorphism. Fig. S2. Immunofluorescence images of iPSCs from three healthy control lines (Ctrl-06, Ctrl-71, Ctrl-88) and three familial AD lines harbouring a PSEN2 (N141I) mutation (fAD-08, fAD-948, fAD-950). The cells were stained for pluripotency markers Nanog (red), Oct 3 (green) and all nuclei were counterstained with DAPI (blue). Scale bars = 50 μm. Fig. S3. Immunofluorescence images of iPSC-derived NPCs from three healthy control lines (Ctrl-06, Ctrl-71, Ctrl-88) and three familial AD lines harbouring a PSEN2 (N141I) mutation (fAD-08, fAD-948, fAD-950). The cells were stained for A the neural progenitor markers Pax-6 (red) and Nestin (green), B a pluripotency marker Oct3 (green) and all nuclei were counterstained with DAPI (blue). Scale bars = 50 μm. Fig. S4. Immunofluorescence images of iPSC-derived astrocytes from three healthy control lines (Ctrl-06, Ctrl-71, Ctrl-88) and three familial AD lines harbouring a PSEN2 (N141I) mutation (fAD-08, fAD-948, fAD-950). The cells were stained for A astrocyte markers GFAP (red) and S100β (green), B the NPC marker nestin (green). All nuclei were counterstained with DAPI (blue). Scale bars = 50 μm. Fig. S5. Transcriptomic analysis of iPSC-derived cell types and primary human fetal astrocytes. A Principal component analysis and B cluster analysis of iPSC-derived astrocytes (black) from healthy control lines (lines 06, 71 & 88) generated in our study and commercially-available primary astrocytes grown in our lab (green) combined with a datasets from Tcw et al (23), including primary astrocytes (purple), iPSC-derived NPCs (light blue), astrocytes (dark blue) and neurons (yellow). Contrast matrix of differential gene expression between cell types comparing datasets C our iPSC-derived astrocytes vs. Tcw et al’s primary astrocyte and iPSC-derived neurons datasets, D Tcw et al’s dataset alone, E our data alone. Fig. S6 Immunofluorescence images of iPSC-derived microglia-like cells from three healthy control lines (Ctrl-06, Ctrl-71, Ctrl-88) and three familial AD lines harbouring a PSEN2 (N141I) mutation (fAD-08, fAD-948, fAD-950). Images show cells stained for A the microglial markers IBA1 (red), TREM2 (green), B CX3CR1 (red) and all nuclei were counterstained with DAPI (blue). Scale bars = 50 μm. Fig. S7. Multi-cytokine array of Alzheimer’s or healthy iPSC-derived astrocytes A basally and B after 24 h exposure to 10 μM Aβ42 and iPSC-derived microglia-like cells C basally and D after 24 h exposure to 10 μM Aβ42. The figure displays the mean ± SD of three cell lines with the average of two experimental duplicates per line. Multiple unpaired, non-parametric Mann-Whitney t-tests adjusting for a 0.05 false discovery rate were used to test whether there were statistically significant differences between mean cytokine/chemokine release of AD-derived and healthy control astrocytes and microglia-like cells (*p < 0.05, **p < 0.01). Cytokines that yielded an average intensity value less than 10% of the maximum (represented by the dotted line) were considered background and not included in the statistical analysis. Fig. S8. Multi-cytokine array of APOE ε3/ε3 and APOE ε3/ε4 iPSC-derived astrocytes A basally and B after 24 h exposure to 10 μM Aβ42 and iPSC-derived microglia-like cells C basally and D after 24 h exposure to 10 μM Aβ42. The figure displays the mean ± SD of three cell lines with the average of two experimental duplicates per line. Multiple unpaired, non-parametric Mann–Whitney t-tests adjusting for a 0.05 false discovery rate were used to test whether there were statistically significant differences between mean cytokine/chemokine release of APOE ε3/ε3 and APOE ε3/ε4 astrocytes and microglia-like cells (*p < 0.05). Cytokines that yielded an average intensity value less than 10% of the maximum (represented by the dotted line) were considered background and not included in the statistical analysis. Fig. S9. Concentrations of A Aβ42, B Aβ40, C the ratio of Aβ42:40 and D total Aβ protein quantified from iPSC-derived astrocyte supernatants 72 h after plating. Secreted Aβ concentrations were measured using a highly sensitive ELISA and normalised to total protein concentration determined by BCA. The figure displays the mean ± SD of three cell lines with n ≥ 2 independent experiments per line. A post hoc unpaired t-test was used to test whether there were statistically significant differences between mean of APOE ε3/ε3 and APOE ε3/ε4 astrocytes