Image Quality Analysis of Eyes Undergoing LASER Refractive Surgery

<p>Average computational (panels A and B) and psychophysical (panels C and D) through-focus curves of all subjects obtained by plotting logVSOTF or logMAR acuity for each induced myopic and hyperopic lens power The solid circles indicate individual data points while the curve indicate the spline fit to the data. Panels A and C show through-focus curves for the first arm of the study while panels B and D show through-focus curves for the second arm of the study. Horizontal and vertical arrows in each panel indicate peak IQ and best focus location, respectively.</p

Relation between logMAR acuity, psychophysical best focus, psychophysical DOF and HORMS obtained from first control experiment.

<p>All other details are similar to <a href="http://www.plosone.org/article/info:doi/10.1371/journal.pone.0148085#pone.0148085.g005" target="_blank">Fig 5</a>.</p

Relation between peak high contrast logMAR acuity, psychophysical best focus, psychophysical high contrast DOF and HORMS obtained from the first arm of the study.

<p>All other details are similar to <a href="http://www.plosone.org/article/info:doi/10.1371/journal.pone.0148085#pone.0148085.g003" target="_blank">Fig 3</a>.</p

Relation between peak logVSOTF, computational best focus, computational DOF and HORMS obtained from the second arm of study.

<p>All other details are similar to <a href="http://www.plosone.org/article/info:doi/10.1371/journal.pone.0148085#pone.0148085.g003" target="_blank">Fig 3</a>.</p

Relation between peak high contrast logMAR acuity, psychophysical best focus, psychophysical high contrast DOF and HORMS obtained from the second arm of the study.

<p>All other details are similar to <a href="http://www.plosone.org/article/info:doi/10.1371/journal.pone.0148085#pone.0148085.g005" target="_blank">Fig 5</a>.</p

Box and whisker plots of the DOF obtained from the second control experiment.

<p>Data obtained from the three different DOF criteria are shown in each panel. Details of the box and whisker plot are similar to <a href="http://www.plosone.org/article/info:doi/10.1371/journal.pone.0148085#pone.0148085.g001" target="_blank">Fig 1C</a>.</p

Relation between peak logVSOTF, computational best focus, computational DOF and HORMS obtained from the first arm of the study.

<p>Panels A to C show data of peak logVSOTF, computational best focus and the computational DOF of both controls and cases plotted against their HORMS values, respectively. Panel D shows data of peak logVSOTF values plotted against the respective computational DOF.</p

Topological Insulator Bi₂Se₃/Si-Nanowire-Based p–n Junction Diode for High-Performance Near-Infrared Photodetector

Chemically derived topological insulator Bi₂Se₃ nanoflake/Si nanowire (SiNWs) heterojunctions were fabricated employing all eco-friendly cost-effective chemical route for the first time. X-ray diffraction studies confirmed proper phase formation of Bi₂Se₃ nanoflakes. The morphological features of the individual components and time-evolved hybrid structures were studied using field emission scanning electron microscope. High resolution transmission electron microscopic studies were performed to investigate the actual nature of junction whereas elemental distributions at junction, along with overall stoichiometry of the samples were analyzed using energy dispersive X-ray studies. Temperature dependent current–voltage characteristics and variation of barrier height and ideality factor was studied between 50 and 300 K. An increase in barrier height and decrease in the ideality factor were observed with increasing temperature for the sample. The rectification ratio (<i>I</i>₊/<i>I</i>_–) for SiNWs substrate over pristine Si substrate under dark and near-infrared (NIR) irradiation of 890 nm was found to be 3.63 and 10.44, respectively. Furthermore, opto-electrical characterizations were performed for different light power intensities and highest photo responsivity and detectivity were determined to be 934.1 A/W and 2.30 × 10¹³ Jones, respectively. Those values are appreciably higher than previous reports for topological insulator based devices. Thus, this work establishes a hybrid system based on topological insulator Bi₂Se₃ nanoflake and Si nanowire as the newest efficient candidate for advanced optoelectronic materials

Co₃O₄ Nanowires on Flexible Carbon Fabric as a Binder-Free Electrode for All Solid-State Symmetric Supercapacitor

Developing portable, lightweight, and flexible energy storage systems has become a necessity with the advent of wearable electronic devices in our modern society. This work focuses on the fabrication of Co₃O₄ nanowires on a flexible carbon fabric (CoNW/CF) substrate by a simple cost-effective hydrothermal route. The merits of the high surface area of the prepared Co₃O₄ nanostructures result in an exceptionally high specific capacitance of 3290 F/g at a scan rate of 5 mV/s, which is close to their theoretical specific capacitance. Furthermore, a solid-state symmetric supercapacitor (SSC) based on CoNW/CF (CoNW/CF//CoNW/CF) was fabricated successfully. The device attains high energy and power densities of 6.7 Wh/kg and 5000 W/kg. It also demonstrates excellent rate capability and retains 95.3% of its initial capacitance after 5000 cycles. Further, the SSC holds its excellent performance at severe bending conditions. When a series assembly of four such devices is charged, it can store sufficient energy to power a series combination of five light-emitting diodes. Thus, this SSC device based on a three-dimensional coaxial architecture opens up new strategies for the design of next-generation flexible supercapacitors

Novel Quaternary Chalcogenide/Reduced Graphene Oxide-Based Asymmetric Supercapacitor with High Energy Density

In this work we have synthesized quaternary chalcogenide Cu₂NiSnS₄ (QC) nanoparticles grown in situ on 2D reduced graphene oxide (rGO) for application as anode material of solid-state asymmetric supercapacitors (ASCs). Thorough characterization of the synthesized composite validates the proper phase, stoichiometry, and morphology. Detailed electrochemical study of the electrode materials and ASCs has been performed. The as-fabricated device delivers an exceptionally high areal capacitance (655.1 mF cm^–2), which is much superior to that of commercial micro-supercapacitors. Furthermore, a remarkable volumetric capacitance of 16.38 F cm^–3 is obtained at a current density of 5 mA cm^–2 combined with a very high energy density of 5.68 mW h cm^–3, which is comparable to that of commercially available lithium thin film batteries. The device retains 89.2% of the initial capacitance after running for 2000 cycles, suggesting its long-term capability. Consequently, the enhanced areal and volumetric capacitances combined with decent cycle stability and impressive energy density endow the uniquely decorated QC/rGO composite material as a promising candidate in the arena of energy storage devices. Moreover, Cu₂NiSnS₄ being a narrow band gap photovoltaic material, this work offers a novel protocol for the development of self-charging supercapacitors in the days to come