Electrodeposition of ZnSe, CdSe and CdTe thin film materials and optoelectronic devices.

5 rectification factor at IV, the barrier heights are in excess of0.84 eV with ideality factors ~1.30. The glass/ITO/ZnSe/CdSe/CdTe/metal multi-layer solar cells are photovoltaic active and produce V[oc] ~250 mV, J[sc] ~10 mAcm[-2], FF ~0.7 and efficiency ~0.9%. Both devices show encouraging results for future developments to achieve high efficiencies

Nanostructured hybrid ZnO thin films for energy conversion

We report on hybrid films based on ZnO/organic dye prepared by electrodeposition using tetrasulfonated copper phthalocyanines (TS-CuPc) and Eosin-Y (EoY). Both the morphology and porosity of hybrid ZnO films are highly dependent on the type of dyes used in the synthesis. High photosensitivity was observed for ZnO/EoY films, while a very weak photoresponse was obtained for ZnO/TS-CuPc films. Despite a higher absorption coefficient of TSCuPc than EoY, in ZnO/EoY hybrid films, the excited photoelectrons between the EoY levels can be extracted through ZnO, and the porosity of ZnO/EoY can also be controlled. © 2011 Moya et al.This study was supported by the Spanish Government through MCINN grant MAT2009-14625-C03-03, the Generalitat Valenciana through programme PROMETEO/2009/063, and the Fundacao para a Ciencia e a Tecnologia (Portugal). Thanks are due to Susie Pannell for critically reading the manuscript and providing invaluable suggestions.Moya Forero, MM.; ANURA SAMANTILLEKE; Mollar García, MA.; Marí Soucase, B. (2011). Nanostructured hybrid ZnO thin films for energy conversion. Nanoscale Research Letters. 6:384-389. https://doi.org/10.1186/1556-276X-6-384S3843896ZHENG, H., PAN, Y., & XIANG, X. (2007). Oxidation of acidic dye Eosin Y by the solar photo-Fenton processes. Journal of Hazardous Materials, 141(3), 457-464. doi:10.1016/j.jhazmat.2006.12.018Qazi, S. J. S., Rennie, A. R., Cockcroft, J. K., & Vickers, M. (2009). Use of wide-angle X-ray diffraction to measure shape and size of dispersed colloidal particles. Journal of Colloid and Interface Science, 338(1), 105-110. doi:10.1016/j.jcis.2009.06.00

Cohesive strength of nanocrystalline ZnO:Ga thin films deposited at room temperature

In this study, transparent conducting nanocrystalline ZnO:Ga (GZO) films were deposited by dc magnetron sputtering at room temperature on polymers (and glass for comparison). Electrical resistivities of 8.8 × 10-4 and 2.2 × 10-3 Ω cm were obtained for films deposited on glass and polymers, respectively. The crack onset strain (COS) and the cohesive strength of the coatings were investigated by means of tensile testing. The COS is similar for different GZO coatings and occurs for nominal strains approx. 1%. The cohesive strength of coatings, which was evaluated from the initial part of the crack density evolution, was found to be between 1.3 and 1.4 GPa. For these calculations, a Young's modulus of 112 GPa was used, evaluated by nanoindentation

Nanostructured hybrid ZnO thin films for energy conversion

Abstract We report on hybrid films based on ZnO/organic dye prepared by electrodeposition using tetrasulfonated copper phthalocyanines (TS-CuPc) and Eosin-Y (EoY). Both the morphology and porosity of hybrid ZnO films are highly dependent on the type of dyes used in the synthesis. High photosensitivity was observed for ZnO/EoY films, while a very weak photoresponse was obtained for ZnO/TS-CuPc films. Despite a higher absorption coefficient of TS-CuPc than EoY, in ZnO/EoY hybrid films, the excited photoelectrons between the EoY levels can be extracted through ZnO, and the porosity of ZnO/EoY can also be controlled.</p

Flexible CuInSe2 photovoltaic cells fabricated by non-vacuum techniques

In this work, CuInSe 2 based flexible photovoltaic cells have been fabricated completely using non-vacuum low-cost techniques. Thin films were deposited on molybdenum thin foil substrates by electrodeposition using a buffered aqueous electrolyte with the deposition of subsequent layers performed by spray pyrolysis. In addition, the buffer layer CdS was replaced with a wider bandgap ZnS (3.7 eV) and analysis undertaken of the fabrication pathway, morphological and compositional changes resulting from the different precursor route. The deposited films were annealed in a Se atmosphere at 450 °C. The influence of annealing temperature and time on the properties of the films are briefly discussed. Characterisation of thin films was performed using aqueous electrolyte contacts. Capacitance measurements were made as a function of applied bias on thin films deposited on metal substrates with blocking electrolyte contacts where analysis of the impedance gave values of the space charge capacitance from which the doping density and flat band potential were derived. The structural characterisation was carried out using X-ray diffraction and Raman spectroscopy. The structure and device properties of Mo (SS)/CuInSe 2/ZnS/n +-ZnO/Ni were characterized using current-voltage technique and photocurrent spectroscopy. © 2011 Elsevier B.V.This work was supported by the Spanish Government through MEC grant MAT2009-14625-C03-03 and the Fundacao para a Ciencia e a Tecnologia (FCT) in Portugal.Samantilleke, AP.; Sahal, M.; Ortiz Moya, L.; Cerqueira, M.; Marí Soucase, B. (2011). Flexible CuInSe2 photovoltaic cells fabricated by non-vacuum techniques. Thin Solid Films. 519:7272-7275. https://doi.org/10.1016/j.tsf.2011.01.373S7272727551

Synthesis and enhanced luminescent characterization&#8232;of SrAl4O7:Eu2+,RE3+ (RE= Nd, Dy) nanophosphors for light emitting applications

[EN] SrAl4O7:Eu2+,RE3+ (RE = Nd, Dy) nanophosphors were efficiently synthesized with a facile fast gel com- bustion procedure in presence of air. During the synthesis process, urea was used as an organic fuel. Boric acid was applied as reducer as well as flux for the reduction of Eu3? ions into Eu2?. Phase composition, morphology and photolumi- nescence (PL) properties of the prepared SrAl4O7:Eu2?,RE3? phosphors were analyzed by X-ray diffraction, scanning electron microscopy (SEM), transmission electron micro- scopy (TEM) and PL techniques respectively. SEM results showed agglomeration with fluffy shapes having voids and pores and further nanostructural details were obtained with TEM. The divalent europium doped SrAl4O7 phosphors showed broad band emission spectra at 506 nm due to 8H3/2 - 8S7/2 transition on excitation at 360 nm. The pre"pared nanophosphors had high brightness and long afterglow properties which could be efficiently applied in variety of potential light emitting applications.The authors gratefully recognize the financial support from the University Grant Commission (UGC), New Delhi [MRP-40-73/2011(SR)] and the European Commission through Nano CIS project (FP7-PEOPLE-2010-IRSES ref. 269279).Singh, D.; Tanwar, V.; Samantilleke, A.; Marí, B.; Singh Kadyan, P.; Singh, KC. (2016). Synthesis and enhanced luminescent characterization&#8232;of SrAl4O7:Eu2+,RE3+ (RE= Nd, Dy) nanophosphors for light emitting applications. Journal of Materials Science: Materials in Electronics. 1-6. https://doi.org/10.1007/s10854-016-4428-2S16Z. Pan, Y.Y. Lu, F. Liu, Nat. Mater. 11, 58 (2012)K.V. Eeckhout, P.F. Smet, D. Poelman, Materials 3, 2536 (2010)X.H. Xu, Y.H. Wang, Y. Gong, W. Zeng, Y.Q. Li, Opt. Express 18, 16989 (2010)A. Bessiere, S. Jacquart, K. Prolkar, A. Lecointre, B. Viana, D. Gourier, Opt. Express 19, 10131 (2011)Q.M. Chermont, C. Chaneac, J. Seguin, F. Pelle, S. Maitrejean, J.P. Jolivet, D. Gourier, M. Bessodes, D. Scherman, Proc. Natl. Acad. Sci. U.S.A. 104, 9266 (2007)J. Holsa, H. Jungner, M. Lastusaari, J. Niittykoski, J. Alloys Compd. 323–324, 326 (2001)W. Zeng, Y.H. Wang, S.C. Han, W.B. Chen, G. Li, Y.Z. Wang, Y. Wen, J. Mater. Chem. C 1, 3004 (2013)H. Ryu, K.S. Bartwal, J. Alloys Compd. 476, 379 (2009)C. Chang, D. Mao, J. Shen, C. Feng, J. Alloys. Compd. 348, 224 (2003)E. Nakazawa, T. Machida, J. Lumin. 72–74, 236 (1997)V. Abbruscato, J. Electrochem. Soc. 118, 930 (1971)B. Smets, J. Rutten, G. Hoeks, J. Verlijsdonk, J. Electrochem. Soc. 136, 2119 (1989)M. Capron, A. Douy, J. Am. Ceram. Soc. 85, 3036 (2002)X. Yuan, Y. Xu, G. Huang, C. Zeng, J. Am. Ceram. Soc. 90, 2283 (2007)Y.H. Lin, Z.T. Zhang, F. Zhang, Z.L. Tang, Q.M. Chen, Mater. Chem. Phys. 65, 103 (2000)P. Escribano, M. Marchal, M.L. Sanjuan, P. Alonso-Gutierrez, B. Julian, E. Cordoncillo, J. Solid State Chem. 178, 1978 (2005)Y. Liu, C.N. Xu, J. Phys. Chem. B 107, 3991 (2003)E.R. Boyko, L.G. Wisnyi, Acta Crystallogr. 11, 444 (1958)A.J. Lindop, D.W. Goodwin, Acta Crystallogr. B28, 2625 (1972)C. Zhu, Y. Yang, X. Liang, S. Yuan, G. Chen, J. Am. Ceram. Soc. 90, 2984 (2007)T.P. Tang, C.M. Lee, F.C. Yen, Ceram. Int. 32, 665 (2006)Z. Pei, Q. Su, J. Zhang, J. Alloys Compd. 198, 51 (1993)Q. Zeng, Z. Pei, Q. Su, J. Alloys Compd. 275, 238 (1998)B. Liu, Y. Wang, J. Zhou, F. Zhang, Z. Wang, J. Appl. Phys. 106, 053102 (2009)Y.L. Chang, H.I. Hsiang, M.T. Liang, J. Alloys. Compd. 461, 598 (2008)R. Pang, C. Li, L. Shi, Q. Su, J. Phys. Chem. Solids 70, 303 (2009)C.H. Huang, T.M. Chen, Opt. Express 18, 5089 (2010)T. Matsuzawa, Y. Aoki, N. Takeuchi, Y. Murayama, J. Electrochem. Soc. 143, 2670 (1996)F. Clabau, X. Rocquefelte, S. Jobic, P. Deniard, M.H. Whangbo, A. Garcia, T. Le Mercier, Chem. Mater. 17, 3904 (2005)G.Y. Lee, W.B. Im, A. Kirakosyan, S.H. Cheong, J.Y. Han, D.Y. Jeon, Opt. Express 21, 3287 (2013)N. Ruelle, M. Pham-Thi, C. Fouassier, Jpn. J. Appl. Phys. 31, 2786 (1992

p-type behavior of electrodeposited ZnO:Cu thin films

Cu-doped ZnO (ZnO:Cu) thin films and ZnO/ ZnO:Cu homojunction devices were electrodeposited on conductive glass substrates in a non-aqueous electrolyte containing Cu and Zn salts. The Cu content of the films is proportional to the Cu/Zn precursor ratio in the deposition electrolyte. ZnO:Cu was found to be of a hexagonal wurtzite structure with (002) preferred orientation. A transition from n-type to p-type was observed for ZnO:Cu films with a Cu/ Zn ratio higher than 2% as inferred from the change in the direction of the photocurrent. The rectifying characteristics shown by homojunction devices further confirm the p-type conductivity of ZnO:Cu layers.This work was supported by the Spanish Government through MEC grant MAT2009-14625-C03-03 and the Portuguese Foundation for Science and Technology (FCT), CIENCIA 2007. Financial support by the European Commission through NanoCIS project (PIRSESGA-2010-269279) is gratefully acknowledged.Marí Soucase, B.; Sahal, M.; Mollar García, MA.; Cerqueira, F.; Samantilleke, AP. (2012). p-type behavior of electrodeposited ZnO:Cu thin films. Journal of Solid State Electrochemistry. 16(1):1-5. https://doi.org/10.1007/s10008-011-1635-xS15161Klingshirn C (2007) Phys Status Solidi B 244:3027–3073Lyons JL, Janotti A, Van de Walle CG (2009) Appl Phys Lett 95:252105–252107Zunger A (2008) Appl Phys Lett 83:1830–1832Park CH, Zhang SB, Wie S (2002) Phys Rev B 66:073202–073204Yan Y, Al-Jassim MM, Wie S (2006) Appl Phys Lett 89:181912–181914Park MS, Min BI (2003) Phys Rev B 68:224436–224441Shukla G (2009) Appl Phys A 97:115–118Buchholz DB, Chang RPH, Song JH, Ketterson JB (2005) Appl Phys Lett 87:82504–82506Rahmani MB, Keshmiri SH, Shafiei M, Latham K, Wlodarski W, du Plessis J, Kalantar-Zadeh K (2009) Sensor Letters 7:621–628Lincot D (2005) Thin Solid Films 487:40–48Tortosa M, Mollar M, Marí B (2007) J Crystal Growth 304:97–102Tortosa M, Mollar M, Marí B, Lloret F (2008) J Appl Phys 104:033910–033914Mollar M, Tortosa M, Casasús R, Marí B (2009) Microelectronics J 40:276–279Marí B, Elmanouni A, Damonte L, Mollar M (2010) Phys Status Solidi A 207:1623–1626Cembrero J, Busquets-Mataix D (2008) Thin Solid Films 517:2859–2864Marí B, Cembrero J, Mollar M, Tortosa M (2008) Phys Status Solidi C 5:555–558Fisicaro P, Adriaens A, Ferrara E, Prenesti E (2007) Anal Chim Acta 597:75–81Manjón FJ, Marí B, Serrano BJ, Romero AH (2005) J Appl Phys 97:053516–053519Rajeshawar K (2001) Fundamentals of semiconductor electrochemistry and photoelectrochemistry. In: Licht S (ed) Encyclopedia of electrochemistry. Wiley-VCH, Weinheim, pp 38–39Zoski CG (2007) Handbook of electrochemistry. Elsevier, Amsterdam, pp 336–35