1 research outputs found
Metal-Organic Framework ZIF‑8 Films As Low‑κ Dielectrics in Microelectronics
ZIF-8 films were deposited on silicon wafers and characterized
to assess their potential as future insulators (low-κ dielectrics)
in microelectronics. Scanning electron microscopy and gas adsorption
monitored by spectroscopic ellipsometry confirmed the good coalescence
of the crystals, the absence of intergranular voids, and the hydrophobicity
of the pores. Mechanical properties were assessed by nanoindentation
and tape tests, confirming sufficient rigidity for chip manufacturing
processes (elastic modulus >3 GPa) and the good adhesion to the
support.
The dielectric constant was measured by impedance analysis at different
frequencies and temperatures, indicating that κ was only 2.33
(±0.05) at 100 kHz, a result of low polarizability and density
in the films. Intensity voltage curves showed that the leakage current
was only 10<sup>–8</sup> A cm<sup>2</sup> at 1 MV cm<sup>–1</sup>, and the breakdown voltage was above 2 MV cm<sup>–1</sup>. In conclusion, metal-organic framework ZIF-8 films were experimentally
found to be promising candidates as low-κ dielectrics in microelectronic
chip devices. This opens a new direction for research into the application
of metal-organic frameworks