Influence of the coherence of spectral domain interference of Fano resonance on the degree of polarization of light

We show an intriguing connection between the coherence of spectral domain interference of two electromagnetic modes in Fano resonance and the resulting degree of polarization of light. A theoretical treatment is developed by combining a general electromagnetic model of partially coherent interference of a spectrally narrow and a broad continuum mode leading to Fano resonance and the cross-spectral density matrix of the interfering polarized fields of light. The model suggests a characteristic variation of the degree of polarization across the region of spectral dip and the peak of Fano resonance as an exclusive signature of the connection between the degree of polarization and the coherence of the interfering modes. The predictions of the model is experimentally verified in the partially polarized Fano resonance spectra from metal Chalcogenides systems, which emerged due to the interference of a narrow excitonic mode with the background continuum of scattered light in the reflectance spectra from the system. The demonstrated connection between polarization and coherence in the spectral domain Fano-type interference of electromagnetic modes is fundamentally important in the context of a broad variety of non-trivial wave phenomena that originate from fine interference effects, which may also have useful practical implications

Spatial variations of the SrI 4607\AA scattering polarization signals at subgranular scale observed with ZIMPOL at GREGOR telescope

Sr I 4607\AA spectral line shows one of the strongest scattering polarization signals in the visible solar spectrum. The amplitudes of these signals are expected to vary at granular spatial scales. This variation can be due to changes in the magnetic field intensity and orientation (Hanle effect) as well as due to spatial and temporal variations in the plasma properties. Measuring the spatial variation of such polarization signal would allow us to study the properties of the magnetic fields at subgranular region. But, the observations are challenging since both high spatial resolution and high spectropolarimetric sensitivity are required at the same time. To the aim of measuring these spatial variations at granular scale, we carried out a spectro-polarimetric measurement with the Zurich IMaging POLarimeter (ZIMPOL), at the GREGOR solar telescope at different limb distances on solar disk. Our results show a spatial variation of scattering linear polarization signals in Sr I 4607\AA line at the granular scale at every $\mu$, starting from 0.2 to 0.8. The correlation between the polarization signal amplitude and the continuum intensity imply statistically that the scattering polarization is higher at the granular regions than in the intergranular lanes.Comment: 4 pages, 3 figures, Proceeding of Third Meeting of the Italian Solar and Heliospheric Community, OCTOBER 28-31, 2018 - TURI

Probing thermal expansion of graphene and modal dispersion at low-temperature using graphene NEMS resonators

We use suspended graphene electromechanical resonators to study the variation of resonant frequency as a function of temperature. Measuring the change in frequency resulting from a change in tension, from 300 K to 30 K, allows us to extract information about the thermal expansion of monolayer graphene as a function of temperature, which is critical for strain engineering applications. We find that thermal expansion of graphene is negative for all temperatures between 300K and 30K. We also study the dispersion, the variation of resonant frequency with DC gate voltage, of the electromechanical modes and find considerable tunability of resonant frequency, desirable for applications like mass sensing and RF signal processing at room temperature. With lowering of temperature, we find that the positively dispersing electromechanical modes evolve to negatively dispersing ones. We quantitatively explain this crossover and discuss optimal electromechanical properties that are desirable for temperature compensated sensors.Comment: For supplementary information and high resolution figures please go to http://www.tifr.res.in/~deshmukh/publication.htm

Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors

Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with carrier mobility reaching 2000 cm2/V.s at room temperature. Temperature-dependent transport measurements reveal activated transport at low temperatures due to surface donors, while at room temperature the transport shows a diffusive behavior. From the conductivity data, the extracted value of sound velocity in InAs nanowires is found to be an order less than the bulk. This low sound velocity is attributed to the extended crystal defects that ubiquitously appear in these nanowires. Analyzing the temperature-dependent mobility data, we identify the key scattering mechanisms limiting the carrier transport in these nanowires. Finally, using these scattering models, we perform drift-diffusion based transport simulations of a nanowire field-effect transistor and compare the device performances with experimental measurements. Our device modeling provides insight into performance limits of InAs nanowire transistors and can be used as a predictive methodology for nanowire-based integrated circuits.Comment: 22 pages, 5 Figures, Nano Letter

Facile fabrication of lateral nanowire wrap-gate devices with improved performance

We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 $cm^2/Vs$ -- significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage.Comment: 3 pages, 3 figure