Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices

10.1088/0022-3727/49/7/075104Journal of Physics D: Applied Physics497075104-07510

Investigation into the Gaussian density of states widths of organic semiconductors

10.1088/0022-3727/49/32/325106Journal of Physics D: Applied Physics4932325106-32510

Highly efficient processable molybdenum trioxide as a hole blocking interlayer for super-yellow organic light emitting diode

10.1088/0022-3727/49/39/395105Journal of Physics D: Applied Physics4939395105-39510

Electrostatic model of the energy-bending within organic semiconductors: experiment and simulation

10.1088/0953-8984/28/36/365002Journal of Physics: Condensed Matter2836365002-36500

Energy level alignment of blended organic semiconductors and electrodes at the interface

10.1016/j.cap.2018.05.002CURRENT APPLIED PHYSICS189982-99

Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi0.95La0.05FeO3 by quantum capacitance model.

Light-sensitive capacitance variation of Bi0.95La0.05FeO3 (BLFO) ceramics has been studied under violet to UV irradiation. The reversible capacitance enhancement up to 21% under 405 nm violet laser irradiation has been observed, suggesting a possible degree of freedom to dynamically control this in high dielectric materials for light-sensitive capacitance applications. By using ultraviolet photoemission spectroscopy (UPS), we show here that exposure of BLFO surfaces to UV light induces a counterintuitive shift of the O2p valence state to lower binding energy of up to 243 meV which is a direct signature of negative electronic compressibility (NEC). A decrease of BLFO electrical resistance agrees strongly with the UPS data suggesting the creation of a thin conductive layer on its insulating bulk under light irradiation. By exploiting the quantum capacitance model, we find that the negative quantum capacitance due to this NEC effect plays an important role in this capacitance enhancement

Interplay of negative electronic compressibility and capacitance enhancement in lightly-doped metal oxide Bi0.95La0.05FeO3 by quantum capacitance model.

Light-sensitive capacitance variation of Bi0.95La0.05FeO3 (BLFO) ceramics has been studied under violet to UV irradiation. The reversible capacitance enhancement up to 21% under 405 nm violet laser irradiation has been observed, suggesting a possible degree of freedom to dynamically control this in high dielectric materials for light-sensitive capacitance applications. By using ultraviolet photoemission spectroscopy (UPS), we show here that exposure of BLFO surfaces to UV light induces a counterintuitive shift of the O2p valence state to lower binding energy of up to 243 meV which is a direct signature of negative electronic compressibility (NEC). A decrease of BLFO electrical resistance agrees strongly with the UPS data suggesting the creation of a thin conductive layer on its insulating bulk under light irradiation. By exploiting the quantum capacitance model, we find that the negative quantum capacitance due to this NEC effect plays an important role in this capacitance enhancement