Monolithically integrated 2.5 GHz extended cavity mode-locked ring laser with intracavity phase modulators

A mode-locked extended cavity quantum well ring laser at 1.58 μm with a repetition rate of 2.5 GHz in the form of a photonic integrated circuit is presented. The device is realized using InP-based active-passive integration technology. The 33 mm long cavity contains gain, saturable absorption, and passive waveguide sections as well as phase shifter sections to enable fine tuning of the spectral position of the lasing modes. Passive and hybrid mode-locked operation, along with the wavelength tuning of the laser modes, are experimentally demonstrated. In the passive mode-locking regime, a beat signal at the fundamental round trip frequency with a 3 dB bandwidth of 6.1 kHz is produced on a fast photo diode

112-Gbit/sλ PAM4 transmission enabled by a negatively-chirped InP-MZ modulator

A negatively-chirped InP-MZM modulated by a 1-Vpp PAM4 signal enables 112Gbit/s/λ data transmission with reduced digital processing complexity. SSMF-links longer than 3-km (KP4-preFEC) or 4-km (HD-preFEC) without digital dispersion pre/post compensation are successfully demonstrated.</p

Calibration of an InP-based monolithically integrated optical pulse shaper

We present the calibration method and characterization of a monolithically integrated semiconductor optical pulse shaper. The photonic integrated circuit has been realized in an InP-based generic photonic foundry process. In this circuit, a 20-channel arrayed waveguide grating filter with 50-GHz channel spacing and 20 phase modulators and semiconductor optical amplifiers are combined on the InP chip. By calibrating the device, a mathematical description of the pulse shaper is obtained. The theoretical procedure for complete calibration of the device is presented, and the details of the experiments and measurement setups are given. We demonstrate that the frequency response of the pulse shaper can be calculated from the response of the individual channels in a reference state of the control signals and a separate mask function that describes the effect of a change in the control signals

Monolithically integrated InP-based modelocked ring laser systems

In this paper we report on the progress in the development of modelocked ring lasers that are integrated on a single chip in the InP/InGaAsP material system. With the current optical integration technology it is possible to integrate quantum well optical amplifiers, phase modulators and passive optical components such as waveguides, splitters and spectral filters as standardized building blocks on a single chip. Using such standardized components a number of passively modelocked ring laser devices have been realized in a standardized fabrication process. Results from a few of these devices are presented here. We have observed a record width of the frequency comb from a modelocked quantum well ring laser operating at a 20 GHz repetition rate. The optical coherent comb is centered around 1542 nm and has a 3 dB bandwidth of 11.5 nm. A minimum pulse width of 900 fs was observed. A second device that is highlighted is a modelocked ring laser with a 2.5 GHz repetition rate. Its 33 mm long cavity is fitted onto a chip of 2.2x1.9 mm2. One of the goals of this work is to make such designs available in device libraries for use in more complex integrated optical systems using standardized technology platforms. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only

Monolithic 2.5 GHz quantum well InGaAsP extended cavity modelocked ring laser with an integrated phase modulator

A passively mode locked extended cavity quantum well ring laser at 1.58 µm with repetition rate of 2.5 GHz in the form of a photonic integrated circuit is presented. The device is realized using InP based active-passive integration technology. The 33mm long cavity contains gain, saturable absorption and passive waveguide sections as well as a phase shifter sections to enable fine tuning of the spectral position of the lasing modes. Passive mode-locked operation and with wavelength tuning of the laser modes are experimentally demonstrated. This laser is the lowest reported repetition rate for a monolithically integrated ring laser

Record bandwidth and sub-picosecond pulses from a monolithically integrated mode-locked quantum well ring laser

In this paper, we present the detailed characterization of a semiconductor ring passively mode-locked laser with a 20 GHz repetition rate that was realized as an indium phosphide based photonic integrated circuit (PIC). Various dynamical regimes as a function of operating conditions were explored in the spectral and time domain. A record bandwidth of the optical coherent comb from a quantum well based device of 11.5 nm at 3 dB and sub-picosecond pulse generation is demonstrated

Investigation of hybrid mode-locking in a 3.1GHz InAs/InP(100) Quantum Dot Mode-locked Laser Diode

No abstract

Observation of dynamics in a 5 Ghz passively mode-locked InAs/InP (100) quantum dot ring laser at 1.5 µm

In this paper we present the first observation of passive mode-locking in a quantum dot (QD) ring laser operating at wavelengths around 1.5 mum. The InAs/InP QD laser structure is grown on n-type (100) InP substrates by metal-organic vapor-phase epitaxy

112-Gbit/sλ PAM4 transmission enabled by a negatively-chirped InP-MZ modulator

\u3cp\u3eA negatively-chirped InP-MZM modulated by a 1-Vpp PAM4 signal enables 112Gbit/s/λ data transmission with reduced digital processing complexity. SSMF-links longer than 3-km (KP4-preFEC) or 4-km (HD-preFEC) without digital dispersion pre/post compensation are successfully demonstrated.\u3c/p\u3