2,590 research outputs found
Approximation of quantum control correction scheme using deep neural networks
We study the functional relationship between quantum control pulses in the
idealized case and the pulses in the presence of an unwanted drift. We show
that a class of artificial neural networks called LSTM is able to model this
functional relationship with high efficiency, and hence the correction scheme
required to counterbalance the effect of the drift. Our solution allows
studying the mapping from quantum control pulses to system dynamics and then
analysing the robustness of the latter against local variations in the control
profile.Comment: 6 pages, 3 figures, Python code available upon request. arXiv admin
note: text overlap with arXiv:1803.0516
Interval identification of FMR parameters for spin reorientation transition in (Ga,Mn)As
In this work we report results of ferromagnetic resonance studies of a 6% 15
nm (Ga,Mn)As layer, deposited on (001)-oriented GaAs. The measurements were
performed with in-plane oriented magnetic field, in the temperature range
between 5K and 120K. We observe a temperature induced reorientation of the
effective in-plane easy axis from [-110] to [110] direction close to the Curie
temperature. The behavior of magnetization is described by anisotropy fields,
H_{eff} (= 4\piM -H_{2\perp}), H_{2\parallel}, and H_{4\parallel}. In order to
precisely investigate this reorientation, numerical values of anisotropy fields
have been determined using powerful - but still largely unknown - interval
calculations. In simulation mode this approach makes possible to find all the
resonance fields for arbitrarily oriented sample, which is generally
intractable analytically. In 'fitting' mode we effectively utilize full
experimental information, not only those measurements performed in special,
distinguished directions, to reliably estimate the values of important physical
parameters as well as their uncertainties and correlations.Comment: 3 pages, 3 figures. Presented at The European Conference "Physics of
Magnetism 2011" (PM'11), June 27 - July 1, 2011, Poznan, Polan
Thickness dependence of magnetic properties of (Ga,Mn)As
We report on a monotonic reduction of Curie temperature in dilute
ferromagnetic semiconductor (Ga,Mn)As upon a well controlled
chemical-etching/oxidizing thinning from 15 nm down to complete removal of the
ferro- magnetic response. The effect already starts at the very beginning of
the thinning process and is accompanied by the spin reorientation transition of
the in-plane uniaxial anisotropy. We postulate that a negative gradient along
the growth direction of self-compensating defects (Mn interstitial) and the
presence of surface donor traps gives quantitative account on these effects
within the p-d mean field Zener model with adequate mod- ifications to take a
nonuniform distribution of holes and Mn cations into account. The described
here effects are of practical importance for employing thin and ultrathin
layers of (Ga,Mn)As or relative compounds in concept spintronics devices, like
resonant tunneling devices in particular.Comment: 4 pages, 4 figures and supplementary information 2 pages, 1 figur
Ferromagnetism and interlayer exchange coupling in short period (Ga,Mn)As/GaAs superlattices
Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The
structures contain magnetic (Ga,Mn)As layers, separated by thin layers of
non-magnetic GaAs spacer. The short period GaMnAs/GaAs
superlattices exhibit a paramagnetic-to-ferromagnetic phase transition close to
60K, for thicknesses of (Ga,Mn)As down to 23 \AA. For
GaMnAs/GaAs superlattices of similar dimensions, the Curie
temperature associated with the ferromagnetic transition is found to oscillate
with the thickness of non magnetic spacer. The observed oscillations are
related to an interlayer exchange interaction mediated by the polarized holes
of the (Ga,Mn)As layers.Comment: REVTeX 4 style; 4 pages, 2 figure
Cubic anisotropy in high homogeneity thin (Ga,Mn)As layers
Historically, comprehensive studies of dilute ferromagnetic semiconductors,
e.g., -type (Cd,Mn)Te and (Ga,Mn)As, paved the way for a quantitative
theoretical description of effects associated with spin-orbit interactions in
solids, such as crystalline magnetic anisotropy. In particular, the theory was
successful in explaining {\em uniaxial} magnetic anisotropies associated with
biaxial strain and non-random formation of magnetic dimers in epitaxial
(Ga,Mn)As layers. However, the situation appears much less settled in the case
of the {\em cubic} term: the theory predicts switchings of the easy axis
between in-plane and directions as a
function of the hole concentration, whereas only the
orientation has been found experimentally. Here, we report on the observation
of such switchings by magnetization and ferromagnetic resonance studies on a
series of high-crystalline quality (Ga,Mn)As films. We describe our findings by
the mean-field - Zener model augmented with three new ingredients. The
first one is a scattering broadening of the hole density of states, which
reduces significantly the amplitude of the alternating carrier-induced
contribution. This opens the way for the two other ingredients, namely the
so-far disregarded single-ion magnetic anisotropy and disorder-driven
non-uniformities of the carrier density, both favoring the
direction of the apparent easy axis. However, according to our results, when
the disorder gets reduced a switching to the orientation
is possible in a certain temperature and hole concentration range.Comment: 12 pages, 9 figure
Influence of annealing parameters on the ferromagnetic properties of optimally passivated (Ga,Mn)As epilayers
The influence of annealing parameters - temperature and time - on the
magnetic properties of As-capped (Ga,Mn)As epitaxial thin films have been
investigated. The dependence of the transition temperature (Tc) on annealing
time marks out two regions. The Tc peak behavior, characteristic of the first
region, is more pronounced for thick samples, while for the second
(`saturated') region the effect of the annealing time is more pronounced for
thin samples. A right choice of the passivation medium, growth conditions along
with optimal annealing parameters routinely yield Tc-values of ~ 150 K and
above, regardless of the thickness of the epilayers.Comment: 5 pages, 3 figure
The slimming effect of advection on black-hole accretion flows
At super-Eddington rates accretion flows onto black holes have been described
as slim (aspect ratio ) or thick (H/R >1) discs, also known as
tori or (Polish) doughnuts. The relation between the two descriptions has never
been established, but it was commonly believed that at sufficiently high
accretion rates slim discs inflate, becoming thick. We wish to establish under
what conditions slim accretion flows become thick. We use analytical equations,
numerical 1+1 schemes, and numerical radiative MHD codes to describe and
compare various accretion flow models at very high accretion rates.We find that
the dominant effect of advection at high accretion rates precludes slim discs
becoming thick. At super-Eddington rates accretion flows around black holes can
always be considered slim rather than thick.Comment: 8 pages, 5 figures. Astronomy & Astrophysics, in pres
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