テイエネルギー ゲンシ ショウトツ ニオケル デンシテキ ソシノウ ノ Z イゾンセイ

We have examined the electron tranfer process for low energy ions Z_1 implanted into silicon, with much less velocity than the Fermi velocity. The polarization effect on the outermost orbitals was the main concern. This effect elevated the transfer probability as about 3 times as compared to the case neglecting it. This encourages Z_1-rang-oscillation observed at 0.01<ε<0.1