1 research outputs found
High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires
InAsSb
nanowires are promising elements for thermoelectric devices,
infrared photodetectors, high-speed transistors, as well as thermophotovoltaic
cells. By changing the Sb alloy fraction the mid-infrared bandgap
energy and thermal conductivity may be tuned for specific device applications.
Using both terahertz and Raman noncontact probes, we show that Sb
alloying increases the electron mobility in the nanowires by over
a factor of 3 from InAs to InAs<sub>0.65</sub>Sb<sub>0.35</sub>. We
also extract the temperature-dependent electron mobility via both
terahertz and Raman spectroscopy, and we report the highest electron
mobilities for InAs<sub>0.65</sub>Sb<sub>0.35</sub> nanowires to date,
exceeding 16,000 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> at 10 K