A quantitative central limit theorem for linear statistics of random matrix eigenvalues

It is known that the fluctuations of suitable linear statistics of Haar distributed elements of the compact classical groups satisfy a central limit theorem. We show that if the corresponding test functions are sufficiently smooth, a rate of convergence of order almost $1/n$ can be obtained using a quantitative multivariate CLT for traces of powers that was recently proven using Stein's method of exchangeable pairs.Comment: Title modified; main result stated under slightly weaker conditions; accepted for publication in the Journal of Theoretical Probabilit

Gain spectroscopy of a type-II VECSEL chip

Using optical pump-white light probe spectroscopy the gain dynamics is investigated for a VECSEL chip which is based on a type-II heterostructure. The active region the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by experimental spectra. The results show a gain buildup on the type-II chip which is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from reduced electron-hole scattering.Comment: 4 pages, 4 figure

Excitonic Photoluminescence in Semiconductor Quantum Wells: Plasma versus Excitons

Time-resolved photoluminescence spectra after nonresonant excitation show a distinct 1s resonance, independent of the existence of bound excitons. A microscopic analysis identifies excitonic and electron-hole plasma contributions. For low temperatures and low densities the excitonic emission is extremely sensitive to even minute optically active exciton populations making it possible to extract a phase diagram for incoherent excitonic populations.Comment: 9 pages, 4 figure

Many-Body Dynamics and Exciton Formation Studied by Time-Resolved Photoluminescence

The dynamics of exciton and electron-hole plasma populations is studied via time-resolved photoluminescence after nonresonant excitation. By comparing the peak emission at the exciton resonance with the emission of the continuum, it is possible to experimentally identify regimes where the emission originates predominantly from exciton and/or plasma populations. The results are supported by a microscopic theory which allows one to extract the fraction of bright excitons as a function of time.Comment: 11 pages, 5 figure

Half-life Limit of 19Mg

A search for 19Mg was performed using projectile fragmentation of a 150 MeV/nucleon 36Ar beam. No events of 19Mg were observed. From the time-of-flight through the fragment separator an upper limit of 22 ns for the half-life of 19Mg was established

Comparison of Simulator Wear Measured by Gravimetric vs Optical Surface Methods for Two Million Cycles

Understanding wear mechanisms are key for better implants Critical to the success of the simulation Small amount of metal wear can have catastrophic effects in the patient such as heavy metal poisoning or deterioration of the bone/implant interface leading to implant failure Difficult to measure in heavy hard-on-hard implants (metal-on-metal or ceramic-on-ceramic) May have only fractions of a milligram of wear on a 200 g component At the limit of detection of even high-end balances when the component is 200 g and the change in weight is on the order of 0.000 1 grams Here we compare the standard gravimetric wear estimate with A non-contact 3D optical profiling method at each weighing stop A coordinate measuring machine (CMM) at the beginning and end of the ru

On the Coulomb-dipole transition in mesoscopic classical and quantum electron-hole bilayers

We study the Coulomb-to-dipole transition which occurs when the separation $d$ of an electron-hole bilayer system is varied with respect to the characteristic in-layer distances. An analysis of the classical ground state configurations for harmonically confined clusters with $N\leq30$ reveals that the energetically most favorable state can differ from that of two-dimensional pure dipole or Coulomb systems. Performing a normal mode analysis for the N=19 cluster it is found that the lowest mode frequencies exhibit drastic changes when $d$ is varied. Furthermore, we present quantum-mechanical ground states for N=6, 10 and 12 spin-polarized electrons and holes. We compute the single-particle energies and orbitals in self-consistent Hartree-Fock approximation over a broad range of layer separations and coupling strengths between the limits of the ideal Fermi gas and the Wigner crystal

Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

The lattice-matched growth of the direct band gap material Ga(NAsP) is a seminal concept for the monolithic integration of III/V laser on a silicon substrate. Here, we report on the growth, characterization, and lasing properties of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures embedded in (BGa)P cladding layers which were deposited on an exactly oriented (001) Si substrate. Structural investigations confirm a high crystal quality without any indication for misfit or threading dislocation formation. Laser operation between 800 nm and 900 nm of these broad area device structures was achieved under optical pumping as well as electrical injection for temperatures up to 150 K. This “proof of principle” points to the enormous potential of Ga(NAsP) as an optical complement to Si microelectronics