23,219 research outputs found
OPE analysis of the nucleon scattering tensor including weak interaction and finite mass effects
We perform a systematic operator product expansion of the most general form
of the nucleon scattering tensor including electro-magnetic and
weak interaction processes. Finite quark masses are taken into account and a
number of higher-twist corrections are included. In this way we derive
relations between the lowest moments of all 14 structure functions and matrix
elements of local operators. Besides reproducing well-known results, new sum
rules for parity-violating polarized structure functions and new mass
correction terms are obtained.Comment: 50 pages, additional references adde
The Role of Kinetic Energy Flux in the Convective Urca Process
The previous analysis of the convective Urca neutrino loss process in
degenerate, convective, quasi-static, carbon-burning cores by Barkat and
Wheeler omitted specific consideration of the role of the kinetic energy flux.
The arguments of Barkat and Wheeler that steady-state composition gradients
exist are correct, but chemical equilibrium does not result in net cooling.
Barkat and Wheeler included a "work" term that effectively removed energy from
the total energy budget that could only have come from the kinetic energy,
which must remain positive. Consideration of the kinetic energy in the
thermodynamics of the convective Urca process shows that the convective Urca
neutrinos reduce the rate of increase of entropy that would otherwise be
associated with the input of nuclear energy and slow down the convective
current, but, unlike the "thermal" Urca process do not reduce the entropy or
temperature.Comment: 16 pages, AAS LaTex, in press, Astrophysical Journal, September 20,
Vol 52
Diffractive charged meson pair production
We investigate the possibility to measure the nonforward gluon distribution
function by means of diffractively produced \pi^+\pi^- and K^+K^- pairs in
polarized lepton nucleon scattering. The resulting cross sections are small and
are dominated by the gluonic contribution. We find relatively large spin
asymmetries, both for \pi^+\pi^- and for K^+K^- pairs.Comment: 15 pages, version with changed kinematical cuts, to be pubished in
Phys.Lett.
The Convective Urca Process with Implicit Two-Dimensional Hydrodynamics
Consideration of the role of the convective flux in the thermodymics of the
convective Urca neutrino loss process in degenerate, convective, quasi-static,
carbon-burning cores shows that the convective Urca process slows down the
convective current around the Urca-shell, but, unlike the "thermal" Urca
process, does not reduce the entropy or temperature for a given convective
volume. Here we demonstrate these effects with two-dimensional numerical
hydrodynamical calculations. These two-dimensional implicit hydrodynamics
calculations invoke an artificial speeding up of the nuclear and weak rates.
They should thus be regarded as indicative, but still qualitative. We find
that, compared to a case with no Urca-active nuclei, the case with Urca effects
leads to a higher entropy in the convective core because the energy released by
nuclear burning is confined to a smaller volume by the effective boundary at
the Urca shell. All else being equal, this will tend to accelerate the
progression to dynamical runaway. We discuss the open issues regarding the
impact of the convective Urca process on the evolution to the "smoldering
phase" and then to dynamical runaway.Comment: 22 pages, 11 figures, accepted for publication in the Astrophysical
Journa
Bostonia Perplexa Gen. Et Sp. Nov., A Calamopityan Axis From The New Albany Shale Of Kentucky
Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/141922/1/ajb206093.pd
Electronic properties of Si/Si1–x–yGexCy heterojunctions
We have used admittance spectroscopy and deep-level transient spectroscopy to characterize electronic properties of Si/Si1–x–yGexCy heterostructures. Band offsets measured by admittance spectroscopy for compressively strained Si/Si1–x–yGexCy heterojunctions indicate that incorporation of C into Si1–x–yGexCy lowers both the valence- and conduction-band edges compared to those in Si1–xGex by an average of 107 ± 6 meV/% C and 75 ± 6 meV/% C, respectively. Combining these measurements indicates that the band alignment is type I for the compositions we have studied, and that these results are consistent with previously reported results on the energy band gap of Si1–x–yGexCy and with measurements of conduction band offsets in Si/Si1–yCy heterojunctions. Several electron traps were observed using deep-level transient spectroscopy on two n-type heterostructures. Despite the presence of a significant amount of nonsubstitutional C (0.29–1.6 at. %), none of the peaks appear attributable to previously reported interstitial C levels. Possible sources for these levels are discussed
Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy
We have used admittance spectroscopy to measure conduction-band and valence-band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Valence-band offsets measured for Si/Si1–xGex heterojunctions were in excellent agreement with previously reported values. Incorporation of C into Si1–x–yGexCy lowers the valence- and conduction-band-edge energies compared to those in Si1–xGex with the same Ge concentration. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicate that the band alignment is Type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results
Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures
Deep-level transient spectroscopy was used to measure the activation energies of deep levels in n-type Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Four deep levels have been observed at various activation energies ranging from 231 to 405 meV below the conduction band. The largest deep-level concentration observed was in the deepest level and was found to be approximately 2 × 10^15 cm^–3. Although a large amount of nonsubstitutional C was present in the alloy layers (1–2 at. %), no deep levels were observed at any energy levels that, to the best of our knowledge, have been previously attributed to interstitial C
Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions
Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si1–xGex heterostructures and conduction-band and valence-band offsets in Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured Si/Si1–xGex valence-band offsets were in excellent agreement with previously reported values. For Si/Si1–x–yGexCy our measurements yielded a conduction-band offset of 100 ± 11 meV for a n-type Si/Si0.82Ge0.169C0.011 heterojunction and valence-band offsets of 118 ± 12 meV for a p-type Si/Si0.79Ge0.206C0.004 heterojunction and 223 ± 20 meV for a p-type Si/Si0.595Ge0.394C0.011 heterojunction. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicates that the band alignment is type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results
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