Cathodoluminescene study of Mg implanted GaN: the impact of dislocation on Mg diffusion

Magnesium (Mg) ion implanted homoepitaxial GaN layers is investigated by cathodoluminescence (CL) and secondary ion mass spectrometry (SIMS). The impact of dislocations on Mg diffusion is clarified by CL monitoring the Mg-related donor-acceptor pair (DAP) emission on novel angle cutting specimen. CL results suggest that: (1) there exist high concentration of nonradiative defects in a Mg implanted layer; and (2) Mg shows pipe diffusion along threading dislocations throughout epilayer to substrate. To achieve successful Mg doping by ion implantation, it is necessary to suppress the formation of a dead region in the Mg implanted layer and the pipe diffusion along threading dislocations

Phonon characteristics and cathodolumininescence of boron nitride nanotubes

Large quantities of highly pure boron nitride nanotubes (BNNTs) are synthesized through a carbon-free method. Nanotube phonon features are investigated by Raman and Fourier-transformed infrared spectroscopies. Both methods indicate highly pure boron nitride phase. Intense ultraviolet light emission is observed when BNNTs are excited by an electron beam, which indicates that the present BNNTs have potential applications in ultraviolet optical devices.</p