Possible indicators for low dimensional superconductivity in the quasi-1D carbide Sc3CoC4

The transition metal carbide Sc3CoC4 consists of a quasi-one-dimensional (1D) structure with [CoC4]_{\inft} polyanionic chains embedded in a scandium matrix. At ambient temperatures Sc3CoC4 displays metallic behavior. At lower temperatures, however, charge density wave formation has been observed around 143K which is followed by a structural phase transition at 72K. Below T^onset_c = 4.5K the polycrystalline sample becomes superconductive. From Hc1(0) and Hc2(0) values we could estimate the London penetration depth ({\lambda}_L ~= 9750 Angstroem) and the Ginsburg-Landau (GL) coherence length ({\xi}_GL ~= 187 Angstroem). The resulting GL-parameter ({\kappa} ~= 52) classifies Sc3CoC4 as a type II superconductor. Here we compare the puzzling superconducting features of Sc3CoC4, such as the unusual temperature dependence i) of the specific heat anomaly and ii) of the upper critical field H_c2(T) at T_c, and iii) the magnetic hysteresis curve, with various related low dimensional superconductors: e.g., the quasi-1D superconductor (SN)_x or the 2D transition-metal dichalcogenides. Our results identify Sc3CoC4 as a new candidate for a quasi-1D superconductor.Comment: 4 pages, 5 figure

Lithographic band gap tuning in photonic band gap crystals

We describe the lithographic control over the spectral response of three-dimensional photonic crystals. By precise microfabrication of the geometry using a reproducible and reliable procedure consisting of electron beam lithography followed by dry etching, we have shifted the conduction band of crystals within the near-infrared. Such microfabrication has enabled us to reproducibly define photonic crystals with lattice parameters ranging from 650 to 730 nm. In GaAs semiconductor wafers, these can serve as high-reflectivity (> 95%) mirrors. Here, we show the procedure used to generate these photonic crystals and describe the geometry dependence of their spectral response

30% external quantum efficiency from surface textured, thin-film light-emitting diodes

There is a significant gap between the internal efficiency of light-emitting diodes (LEDs) and their external efficiency. The reason for this shortfall is the narrow escape cone for light in high refractive index semiconductors. We have found that by separating thin-film LEDs from their substrates (by epitaxial lift-off, for example), it is much easier for light to escape from the LED structure and thereby avoid absorption. Moreover, by nanotexturing the thin-film surface using "natural lithography," the light ray dynamics becomes chaotic, and the optical phase-space distribution becomes "ergodic," allowing even more of the light to find the escape cone. We have demonstrated 30% external efficiency in GaAs LEDs employing these principles

Direct picosecond time resolution of unimolecular reactions initiated by local mode excitation

The concept of local mode (LM) states [1] in large molecules raises the possibilty of inducing chemical reactions from a well-defined initial state (bond-selective chemistry). The results of linewidth and energy measurements in gases, [2(a)] and low temperature solids, [2(b)] however, indicate that the relaxation times for such high energy (> 15000 cm^-1) states can be extremely short, < 1ps. Because of the lack of direct time-resolved measurements, the following fundamental questions have not been unequivocally answered: What are the homogeneous linewidths of LM states and what are the rates of energy relaxation or reaction out of these states? Over the past five years we have made several attempts to observe the picosecond dynamics of LM states. Due to the inherent difficulties associated with making these measurements, such as the very small oscillator strength (σ < 10^-23 cm^2), an extremely sensitive probing technique becomes imperative

Gauge symmetric delta(1232) couplings and the radiative muon capture in hydrogen

Using the difference between the gauge symmetric and standard pi-N-delta couplings, a contact pi-pi-N-N term, quadratic in the pi-N-delta coupling, is explicitly constructed. Besides, a contribution from the delta excitation mechanism to the photon spectrum for the radiative muon capture in hydrogen is derived from the gauge symmetric pi-N-delta and gamma-N-delta couplings. It is shown for the photon spectrum, studied recently experimentally, that the new spectrum is for the photon momentums k > 60 MeV by 4-10 % smaller than the one obtained from standardly used couplings with the on-shell deltas.Comment: 9 pages, 3 figure

Noise in Al single electron transistors of stacked design

We have fabricated and examined several Al single electron transistors whose small islands were positioned on top of a counter electrode and hence did not come into contact with a dielectric substrate. The equivalent charge noise figure of all transistors turned out to be surprisingly low, (2.5 - 7)*10E-5 e/sqrt(Hz) at f = 10 Hz. Although the lowest detected noise originates mostly from fluctuations of background charge, the noise contribution of the tunnel junction conductances was, on occasion, found to be dominant.Comment: 4 pages of text with 1 table and 5 figure

1.57 μm InGaAsP/InP surface emitting lasers by angled focus ion beam etching

The characteristics of 1.57 μm InGaAsP/InP surface emitting lasers based on an in-plan ridged structure and 45° beam deflectors defined by angled focused ion beam (FIB) etching are reported. With an externally integrated beam deflector, threshold currents and emission spectra identical to conventional edge emitting lasers are achieved. These results show that FIB etching is a very promising technique for the definition of high quality mirrors and beam deflectors on semiconductor heterostructures for a variety of integrated optoelectronic devices

Thermoelectric properties of Zn_5Sb_4In_(2-δ)(δ=0.15)

The polymorphic intermetallic compound Zn_5Sb_4In_(2−δ) (δ = 0.15(3)) shows promising thermoelectric properties at low temperatures, approaching a figure of merit ZT of 0.3 at 300 K. However, thermopower and electrical resistivity changes discontinuously at around 220 K. Measurement of the specific heat locates the previously unknown temperature of the order-disorder phase transition at around 180 K. Investigation of the charge carrier concentration and mobility by Hall measurements and infrared reflection spectroscopy indicate a mixed conduction behavior and the activation of charge carriers at temperatures above 220 K. Zn_5Sb_4In_(2−δ) has a low thermal stability, and at temperatures above 470 K samples decompose into a mixture of Zn, InSb, and Zn_4Sb_3

Monolithic arrays of surface emitting laser NOR logic devices

Monolithic, cascadable, laser-logic-device arrays have been realized and characterized. The monolithic surface-emitting laser logic (SELL) device consists of an AlGaAs superlattice lasing around 780 nm connected to a heterojunction phototransistor (HPT) in parallel and a resistor in series. Arrays up to 8×8 have been fabricated, and 2×2 arrays show uniform characteristics. The optical logic output is switched off with 40 μW incident optical input

Generalized polarizabilities and the spin-averaged amplitude in virtual Compton scattering off the nucleon

We discuss the low-energy behavior of the spin-averaged amplitude of virtual Compton scattering (VCS) off a nucleon. Based on gauge invariance, Lorentz invariance and the discrete symmetries, it is shown that to first order in the frequency of the final real photon only two generalized polarizabilities appear. Different low-energy expansion schemes are discussed and put into perspective.Comment: 13 pages, 1 postscript figure, Revtex using eps