6 research outputs found
Influência de práticas conservacionistas na umidade do solo e no cultivo do milho (Zea mays L.) em semiárido nordestino
Temporal variability of soil water content under different surface conditions in the semiarid region of the Pernambuco state
Short-term effect of a crop-livestock-forestry system on soil, water and nutrient loss in the Cerrado-Amazon ecotone
Front-end process modeling in silicon
Front-end processing mostly deals with technologies associated to junction formation in semiconductor devices. Ion implantation and thermal anneal models are key to predict active dopant placement and activation. We review the main models involved in process simulation, including ion implantation, evolution of point and extended defects, amorphization and regrowth mechanisms, and dopant-defect interactions. Hierarchical simulation schemes, going from fundamental calculations to simplified models, are emphasized in this Colloquium. Although continuum modeling is the mainstream in the semiconductor industry, atomistic techniques are starting to play an important role in process simulation for devices with nanometer size features. We illustrate in some examples the use of atomistic modeling techniques to gain insight and provide clues for process optimization