43 research outputs found

    A readiness assessment framework for Blockchain adoption: a healthcare case study

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    Blockchain technology has been gaining traction across different sectors. It has the potential to immensely benefit the healthcare sector, given the sector's inherent complexities, problems, and inefficiencies. However, to date, no comprehensive, evidence-based effort has been made to understand the readiness of this sector for blockchain adoption. We proposed a readiness assessment framework that encompasses the complex interplay of different underlying factors, social structures, and institutional mechanisms and that covers all key stakeholders. Based on a systematic literature review, the framework is applied to the UAE's healthcare sector and its applicability and usefulness is established. The findings show the multifaceted significance of government readiness in driving blockchain initiatives. Large firms are found to be more willing to leverage the opportunities afforded by blockchain. Lack of clarity on blockchain regulations and laws, and issues pertaining to privacy and trust are found to affect the readiness of all stakeholders. The proposed framework and the study's findings will be useful in guiding policy interventions and developing support mechanisms to strengthen areas related to blockchain adoption

    Optimal Dose of Spinal Bupivacaine on Maternal and Fetal Outcomes in Parturients Undergoing Combined Technique for Labor Analgesia: A Randomized Double Blinded Prospective Study

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    Study Objectives: Maternal hypotension and fetal bradycardia (FB) are recognized complications of combined spinal epidural. Our purpose was to ascertain which of 3 common doses of spinal bupivacaine results in optimal analgesia with minimal side effects, assuming the lowest dose fills all criteria. Design: Prospective, randomized clinical trial. Setting: Labor and Delivery Unit of 514-bed urban teaching hospital. Patients, Interventions and Measurements: Patients were assigned to receive an intrathecal dose of 20 mcg of fentanyl with either 2.5 mg, 1.66 mg, or 1.25 mg of isobaric bupivacaine. Visual Analog Scale (VAS) Pain Score, fetal heart rate (FHR), maternal blood pressure (BP), number of hypotensive episodes, doses of vasopressors, nitroglycerin and mode of delivery were recorded at various time points. Main results: 164 patients were enrolled: 66 receiving 1.25 mg, 50 in the 1.66 mg group and 48 in the 2.5 mg. At 6 and 10 minutes, we recorded in the 1.66 mg group: 4.7% and 4.6%, 18.9% and 23.9% fewer hypotensive episodes compared with the 1.25 mg and the 2.5 mg groups respectively and significantly more hypotensive episodes in the 2.5 mg group (p = 0.025 and 0.019 respectively). There was no statistical difference in vasopressors use, mode of delivery or FB. The VAS decreased equally by an average of 7–10 points among all groups. Conclusion: The 1.66 mg spinal dose was associated with the least hypotensive episodes and equivalent pain relief as the 2.5 mg. The 1.25 mg and 1.66 mg doses allowed for adequate BP and FHR stability. Clinical Trial: Study registered on the ClinicalTrial.gov website under the NCT number NCT02159807

    Growth Rate and Sensing Properties οf Plasma Deposited Silicon Organic Thin Films from Hexamethyldisilazane Compound

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    Silicon organic thin films have been prepared by RF hollow cathode plasma chemical vapor deposition system, from hexamethyldisilazane (HMDSN) as the source compound, under different plasma conditions, namely feed gas and applied RF power. The feed gas has been changed from argon to nitrogen, and the power has been varied between 100 W and 300 W in N2/HMDSN plasma. The plasma active species (electrons, ion flux rate, and UV radiation) contributing to the films growth mechanisms have been identified by electrical probes and optical emission spectroscopic analysis. The films have been investigated for their thickness and deposition rate, using quartz crystal microbalance, and sensing properties relating to humidity and gas (NH3, CO2 and O2) sorptive investigations, using the piezoelectric effect of quartz crystals of the quartz crystal microbalance. The effect of the different plasma conditions on the plasma phase characteristics and deposited thin films properties, as well as the correlations between deposition rate and plasma characteristics and between sorptive properties, water contact angles and thin films surface morphology are reported. PACS numbers: 52.70.Ds, 52.70.Kz, 81.15.Gh, 68.43.−h, 68.55.J− 1

    Growth Rate and Sensing Properties οf Plasma Deposited Silicon Organic Thin Films from Hexamethyldisilazane Compound

    No full text
    Silicon organic thin films have been prepared by RF hollow cathode plasma chemical vapor deposition system, from hexamethyldisilazane (HMDSN) as the source compound, under different plasma conditions, namely feed gas and applied RF power. The feed gas has been changed from argon to nitrogen, and the power has been varied between 100 W and 300 W in N2N_{2}/HMDSN plasma. The plasma active species (electrons, ion flux rate, and UV radiation) contributing to the films growth mechanisms have been identified by electrical probes and optical emission spectroscopic analysis. The films have been investigated for their thickness and deposition rate, using quartz crystal microbalance, and sensing properties relating to humidity and gas (NH3,NH_{3}, CO2CO_{2} and O2O_{2}) sorptive investigations, using the piezoelectric effect of quartz crystals of the quartz crystal microbalance. The effect of the different plasma conditions on the plasma phase characteristics and deposited thin films properties, as well as the correlations between deposition rate and plasma characteristics and between sorptive properties, water contact angles and thin films surface morphology are reported

    Structural, Optical and Electrical Properties of Plasma Deposited Thin Films from Hexamethyldisilazane Compound

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    Silicon organic thin films have been prepared by RF hollow cathode plasma chemical vapor deposition system, from hexamethyldisilazane (HMDSN) as the source compound, under different plasma conditions, namely feed gas and applied RF power. The feed gas has been changed from argon to nitrogen, and the power has been varied between 100 W and 300 W in N2N_2/HMDSN plasma. The structural properties of the deposited films have been investigated by the Fourier transform infrared spectroscopy technique. Spectrophotometry measurements have been used to determine films optical constants (refractive index, dielectric constant and energy band gap); in addition, the photoluminescence from these films has been recorded. The electrical resistivity of films has been estimated from the measurements of current-voltage characteristics of deposited thin films. The effect of the different plasma conditions on these structural, optical and electrical properties of the prepared thin films, as well as the correlation between the different properties are reported
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