Row-switched states in two-dimensional underdamped Josephson junction arrays

When magnetic flux moves across layered or granular superconductor structures, the passage of vortices can take place along channels which develop finite voltage, while the rest of the material remains in the zero-voltage state. We present analytical studies of an example of such mixed dynamics: the row-switched (RS) states in underdamped two-dimensional Josephson arrays, driven by a uniform DC current under external magnetic field but neglecting self-fields. The governing equations are cast into a compact differential-algebraic system which describes the dynamics of an assembly of Josephson oscillators coupled through the mesh current. We carry out a formal perturbation expansion, and obtain the DC and AC spatial distributions of the junction phases and induced circulating currents. We also estimate the interval of the driving current in which a given RS state is stable. All these analytical predictions compare well with our numerics. We then combine these results to deduce the parameter region (in the damping coefficient versus magnetic field plane) where RS states can exist.Comment: latex, 48 pages, 15 figs using psfi

Theory of charge transport in diffusive normal metal / conventional superconductor point contacts

Tunneling conductance in diffusive normal metal / insulator / s-wave superconductor (DN/I/S) junctions is calculated for various situations by changing the magnitudes of the resistance and Thouless energy in DN and the transparency of the insulating barrier. The generalized boundary condition introduced by Yu. Nazarov [Superlattices and Microstructures 25 1221 (1999)] is applied, where the ballistic theory by Blonder Tinkham and Klapwijk (BTK) and the diffusive theory by Volkov Zaitsev and Klapwijk based on the boundary condition of Kupriyanov and Lukichev (KL) are naturally reproduced. It is shown that the proximity effect can enhance (reduce) the tunneling conductance for junctions with a low (high) transparency. A wide variety of dependencies of tunneling conductance on voltage bias is demonstrated including a $U$-shaped gap like structure, a zero bias conductance peak (ZBCP) and a zero bias conductance dip (ZBCD)