Possible Jahn-Teller effect in Si-inverse layers

Jahn-Teller effect in bivalley Si(100) MOSFET under conditions of quantum Hall effect at integer filling factors nu=1,2,3 is studied. This system is described by SU(4) hidden symmetry. At nu=2 static and dynamic lattice deformation creates an easy-plane anisotropy and antiferromagnetic exchange and lifts the valley degeneracy. At nu=1,3 Coulomb interaction is essential to produce weak easy-plane anisotropy. Three phases: ferromagnetic, canted antiferromagnetic and spin-singlet, have been found. Anisotropy energy of charged skyrmion excitation in every phase is found.Comment: 8 pages, 4 figure

On the origin of transversal current in double-layer heterostructures

It is shown that usually used theoretical model for double-layer heterostructures as a pseudospin ferromagnet does not explain the observed two-dimensional spectrum. Its existence is possible when neglecting Coulomb interaction destroying two-dimensional structures and can be realized only in a strong magnetic field. That is connected also with the plain vortex lattices forming in strong magnetic fields due to thermodynamic instability. This model gives reasonable explanations of various observed effects depending on the filling of the corresponding bands. In particular in this work we show that in double-layer heterostructures a large interlayer conductance really observed can exist

Fractional Quantum Hall Effect and vortex lattices

It is demonstrated that all observed fractions at moderate Landau level fillings for the quantum Hall effect can be obtained without recourse to the phenomenological concept of composite fermions. The possibility to have the special topologically nontrivial many-electron wave functions is considered. Their group classification indicates the special values of of electron density in the ground states separated by a gap from excited states

Manifestation of the bulk phase transition in the edge energy spectrum in a two dimensional bilayer electron system

We use a quasi-Corbino sample geometry with independent contacts to different edge states in the quantum Hall effect regime to investigate the edge energy spectrum of a bilayer electron system at total filling factor $\nu=2$. By analyzing non-linear $I-V$ curves in normal and tilted magnetic fields we conclude that the edge energy spectrum is in a close connection with the bulk one. At the bulk phase transition spin-singlet - canted antiferromagnetic phase $I-V$ curve becomes to be linear, indicating the disappearance or strong narrowing of the $\nu=1$ incompressible strip at the edge of the sample.Comment: 5 pages, 5 figure

Multicomponent dense electron gas as a model of Si MOSFET

We solve two-dimensional model of $N$-component dense electron gas in the limit of large $N$ and in a range of the Coulomb interaction parameter: $N^{-3/2}\ll r_s\ll 1$. The quasiparticle interaction on the Fermi circle vanishes as 1/N. The ground state energy and the effective mass are found as series in powers of $r_s^{2/3}$. In the quantum Hall state on the lowest Landau level at integer filling: $1\ll\nu<N$, the charge activation energy gap and the exchange constant are found.Comment: 10 pages, 4 figure