Infectious mononucleosis: clinical and epidemiological peculiarities

Scientific supervisor: T.P. Bynd

Noncontact measurement of high-temperature surface tension and viscosity of bulk metallic glass-forming alloys using the drop oscillation technique

High-temperature surface tension and viscosities for five bulk metallic glass-forming alloys with widely different glass-forming abilities are measured. The measurements are carried out in a high-vacuum electrostatic levitator using the drop oscillation technique. The surface tension follows proportional mathematical addition of pure components' surface tension except when some of the constituent elements have much lower surface tension. In such cases, there is surface segregation of the low surface tension elements. These alloys are found to have orders of magnitude higher viscosity at their melting points compared to the constituent metals. Among the bulk glass-forming alloys, the better glass former has a higher melting-temperature viscosity, which demonstrates that high-temperature viscosity has a pronounced influence on glass-forming ability. Correlations between surface tension and viscosity are also investigated

Overheating threshold and its effect on time–temperature-transformation diagrams of zirconium based bulk metallic glasses

A pronounced effect of overheating is observed on the crystallization behavior for the three zirconium-based bulk metallic glasses: Zr41.2Ti13.8Cu12.5Ni10Be22.5, Zr57Cu15.4Ni12.6Al10Nb5, and Zr52.5Cu17.9Ni14.6Al10Ti5. A threshold overheating temperature is found for each of the three alloys, above which there is a drastic increase in the undercooling level and the crystallization times. Time–temperature-transformation (TTT) diagrams were measured for the three alloys by overheating above their respective threshold temperatures. The TTT curves for Zr41.2Ti13.8Cu12.5Ni10Be22.5 and Zr57Cu15.4Ni12.6Al10Nb5 are very similar in shape and scale with their respective glass transition temperatures, suggesting that system-specific properties do not play a crucial role in defining crystallization kinetics in these alloys. The critical cooling rates to vitrify the alloys as determined from the TTT curves are about 2 K/s for Zr41.2Ti13.8Cu12.5Ni10Be22.5 and 10 K/s for Zr57Cu15.4Ni12.6Al10Nb5. The measurements were conducted in a high-vacuum electrostatic levitator

Epitaxial graphene on SiC(0001): More than just honeycombs

The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of graphene, with wafer-size epitaxial graphene on SiC(0001) now possible. Despite this recent progress, the exact nature of the graphene-SiC interface and whether the graphene even has a semiconducting gap remain controversial. Using scanning tunneling microscopy with functionalized tips and density functional theory calculations, here we show that the interface is a warped carbon sheet consisting of three-fold hexagon-pentagon-heptagon complexes periodically inserted into the honeycomb lattice. These defects relieve the strain between the graphene layer and the SiC substrate, while still retaining the three-fold coordination for each carbon atom. Moreover, these defects break the six-fold symmetry of the honeycomb, thereby naturally inducing a gap: the calculated band structure of the interface is semiconducting and there are two localized states near K below the Fermi level, explaining the photoemission and carbon core-level data. Nonlinear dispersion and a 33 meV gap are found at the Dirac point for the next layer of graphene, providing insights into the debate over the origin of the gap in epitaxial graphene on SiC(0001). These results indicate that the interface of the epitaxial graphene on SiC(0001) is more than a dead buffer layer, but actively impacts the physical and electronic properties of the subsequent graphene layers