Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler

We report on a heterogeneously integrated InP/silicon-on-insulator (SOI) laser source realized through divinylsiloxane-bis-benzocyclobutene (DVS-BCB) wafer bonding. The hybrid lasers present several new features. The III-V waveguide has a width of only 1.7 mu m, reducing the power consumption of the device. The silicon waveguide thickness is 400 nm, compatible with high-performance modulator designs and allowing efficient coupling to a standard 220-nm high index contrast silicon waveguide layer. In order to make the mode coupling efficient, both the III-V waveguide and silicon waveguide are tapered, with a tip width for the III-V waveguide of around 800 nm. These new features lead to good laser performance: a lasing threshold as low as 30 mA and an output power of more than 4 mW at room temperature in continuous-wave operation regime. Continuous wave lasing up to 70 degrees C is obtained

III-V-on-silicon anti-colliding pulse-type mode-locked laser

An anti-colliding pulse-type III–V-on-silicon passively mode-locked laser is presented for the first time based on a III–V-on-silicon distributed Bragg reflector as outcoupling mirror implemented partially underneath the III–V saturable absorber. Passive mode-locking at 4.83 GHz repetition rate generating 3 ps pulses is demonstrated. The generated fundamental RF tone shows a 1.7 kHz 3 dB linewidth. Over 9 mW waveguide coupled output power is demonstrated

Demonstration of a novel III-V-on-Si distributed feedback laser

We present the first experimental demonstration of a novel III-V-on-silicon distributed feedback laser type. All structures defining the laser cavity are defined in the silicon. Alasing threshold of 50mA and a side mode suppression ratio higher than 40 dB is achieved

Spectral density of random graphs with topological constraints

The spectral density of random graphs with topological constraints is analysed using the replica method. We consider graph ensembles featuring generalised degree-degree correlations, as well as those with a community structure. In each case an exact solution is found for the spectral density in the form of consistency equations depending on the statistical properties of the graph ensemble in question. We highlight the effect of these topological constraints on the resulting spectral density.Comment: 24 pages, 6 figure

III-V-on-silicon multi-frequency lasers

Compact multi-frequency lasers are realized by combining III-V based optical amplifiers with silicon waveguide optical demultiplexers using a heterogeneous integration process based on adhesive wafer bonding. Both devices using arrayed waveguide grating routers as well as devices using ring resonators as the demultiplexer showed lasing with threshold currents between 30 and 40 mA and output powers in the order of a few mW. Laser operation up to 60°C is demonstrated. The small bending radius allowable for the silicon waveguides results in a short cavity length, ensuring stable lasing in a single longitudinal mode, even with relaxed values for the intra-cavity filter bandwidths

Heterogeneously integrated III-V/Si multi-wavelength laser based on a ring resonator array multiplexer

A 4-channel multi-wavelength laser integrated on a silicon waveguide circuit is realized. Waveguide-coupled output powers of 2mW and a side mode suppression ratio of more than 45dB for all channels is realized