Effects of magnetic field and disorder on electronic properties of Carbon Nanotubes

Electronic properties of metallic and semiconducting carbon nanotubes are investigated in presence of magnetic field perpendicular to the CN-axis, and disorder introduced through energy site randomness. The magnetic field field is shown to induce a metal-insulator transition (MIT) in absence of disorder, and surprisingly disorder does not affect significantly the MIT. These results may find confirmation through tunneling experimentsComment: 4 pages, 6 figures. Phys. Rev. B (in press

Spin configurations of carbon nanotube in a nonuniform external potential

We study, theoretically, the ground state spin of a carbon nanotube in the presence of an external potential. We find that when the external potential is applied to a part of the nanotube, its variation changes the single electron spectrum significantly. This, in combination with Coulomb repulsion and the symmetry properties of a finite length armchair nanotube induces spin flips in the ground state when the external potential is varied. We discuss the possible application of our theory to recent measurements of Coulomb blocked peaks and their dependence on a weak magnetic field in armchair carbon nanotubes.Comment: RevTeX, 5 pages + two figure

Universality of electron correlations in conducting carbon nanotubes

Effective low-energy Hamiltonian of interacting electrons in conducting single-wall carbon nanotubes with arbitrary chirality is derived from the microscopic lattice model. The parameters of the Hamiltonian show very weak dependence on the chiral angle, which makes the low energy properties of conducting chiral nanotubes universal. The strongest Mott-like electron instability at half filling is investigated within the self-consistent harmonic approximation. The energy gaps occur in all modes of elementary excitations and estimate at $0.01-0.1$ eV.Comment: 4 pages, 2 figure

Luttinger liquid behavior in multi-wall carbon nanotubes

The low-energy theory for multi-wall carbon nanotubes including the long-ranged Coulomb interactions, internal screening effects, and single-electron hopping between graphite shells is derived and analyzed by bosonization methods. Characteristic Luttinger liquid power laws are found for the tunneling density of states, with exponents approaching their Fermi liquid value only very slowly as the number of conducting shells increases. With minor modifications, the same conclusions apply to transport in ropes of single-wall nanotubes.Comment: 4 pages Revte

Subband population in a single-wall carbon nanotube diode

We observe current rectification in a molecular diode consisting of a semiconducting single-wall carbon nanotube and an impurity. One half of the nanotube has no impurity, and it has a current-voltage (I-V) charcteristic of a typical semiconducting nanotube. The other half of the nanotube has the impurity on it, and its I-V characteristic is that of a diode. Current in the nanotube diode is carried by holes transported through the molecule's one-dimensional subbands. At 77 Kelvin we observe a step-wise increase in the current through the diode as a function of gate voltage, showing that we can control the number of occupied one-dimensional subbands through electrostatic doping.Comment: to appear in Physical Review Letters. 4 pages & 3 figure

Role of Single Defects in Electronic Transport through Carbon Nanotube Field-Effect Transistors

The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field effect at discrete defects along the CNFET length. The depletion surface potential of individual defects is quantified from the SGM-imaged radius of the defect as a function of tip bias voltage. This provides a measure of the Fermi level at the defect with zero tip voltage, which is as small as 20 meV for the strongest defects. The effect of defects on transport is probed by SIM as a function of backgate and tip-gate voltage. When the backgate voltage is set so the CNFET is "on" (conducting), SIM reveals a uniform potential drop along its length, consistent with diffusive transport. In contrast, when the CNFET is "off", potential steps develop at the position of depleted defects. Finally, high-resolution imaging of a second set of weak defects is achieved in a new "tip-gated" SIM mode.Comment: to appear in Physical Review Letter

Non-equilibrium Plasmons in a Quantum Wire Single Electron Transistor

We analyze a single electron transistor composed of two semi-infinite one dimensional quantum wires and a relatively short segment between them. We describe each wire section by a Luttinger model, and treat tunneling events in the sequential approximation when the system's dynamics can be described by a master equation. We show that the steady state occupation probabilities in the strongly interacting regime depend only on the energies of the states and follow a universal form that depends on the source-drain voltage and the interaction strength.Comment: 4 pages, 3 figures. To appear in the Phys. Rev. Let

Strong correlation effects in single-wall carbon nanotubes

We present an overview of strong correlations in single-wall carbon nanotubes, and an introduction to the techniques used to study them theoretically. We concentrate on zigzag nanotubes, although universality dictates that much ofthe theory can also be applied to armchair or chiral nanotubes. We show how interaction effects lead to exotic low energy properties and discuss future directions for studies on correlation effects in nanotubes

Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors

We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by cobalt electrodes. Scanning gate microscopy reveals that the bulk response of these devices is similar to gold-contacted p-CNFETs, confirming that Schottky barrier formation at the contact interface determines accessibility of electron and hole transport regimes. The transfer characteristics and Coulomb Blockade (CB) spectroscopy in ambipolar devices show strongly enhanced gate coupling, most likely due to reduction of defect density at the silicon/silicon-dioxide interface during hydrogen anneal. The CB data in the ``on''-state indicates that these CNFETs are nearly ballistic conductors at high electrostatic doping. Due to their nanoscale capacitance, CNFETs are extremely sensitive to presence of individual charge around the channel. We demonstrate that this property can be harnessed to construct data storage elements that operate at the few-electron level.Comment: 6 pages text, 3 figures and 1 table of content graphic; available as NanoLetters ASAP article on the we

Electronic Properties of Armchair Carbon Nanotubes : Bosonization Approach

The phase Hamiltonian of armchair carbon nanotubes at half-filling and away from it is derived from the microscopic lattice model by taking the long range Coulomb interaction into account. We investigate the low energy properties of the system using the renormalization group method. At half-filling, the ground state is a Mott insulator with spin gap, in which the bound states of electrons at different atomic sublattices are formed. The difference from the recent results [Phys. Rev. Lett. 79, 5082 (1997)] away half-filling is clarified.Comment: 4 pages, 1 figure, Revte