Large spin-orbit splitting and weakly-anisotropic superconductivity revealed with single-crystalline noncentrosymmetric CaIrSi3

We report normal and superconducting properties of the Rashba-type noncentrosymmetric com- pound CaIrSi3, using single crystalline samples with nearly 100% superconducting volume fraction. The electronic density of states revealed by the hard x-ray photoemission spectroscopy can be well explained by the relativistic first-principle band calculation. This indicates that strong spin-orbit interaction indeed affects the electronic states of this compound. The obtained H - T phase diagram exhibits only approximately 10% anisotropy, indicating that the superconducting properties are almost three dimensional. Nevertheless, strongly anisotropic vortex pinning is observed.Comment: 8 pages, 6 figures, 1 table, accepted for publication in Phys. Rev.

Properties of the quaternary half-metal-type Heusler alloy Co2_2Mn1−x_{1-x}Fex_xSi

This work reports on the bulk properties of the quaternary Heusler alloy Co$_2$Mn$_{1-x}$Fe$_x$Si with the Fe concentration $x=$. All samples, which were prepared by arc melting, exhibit $L2_1$ long range order over the complete range of Fe concentration. Structural and magnetic properties of Co$_2$Mn$_{1-x}$Fe$_x$Si Heusler alloys were investigated by means of X-ray diffraction, high and low temperature magnetometry, M{\"o\ss}bauer spectroscopy, and differential scanning calorimetry. The electronic structure was explored by means of high energy photo emission spectroscopy at about 8 keV photon energy. This ensures true bulk sensitivity of the measurements. The magnetization of the Fe doped Heusler alloys is in agreement with the values of the magnetic moments expected for a Slater-Pauling like behavior of half-metallic ferromagnets. The experimental findings are discussed on the hand of self-consistent calculations of the electronic and magnetic structure. To achieve good agreement with experiment, the calculations indicate that on-site electron-electron correlation must be taken into account, even at low Fe concentration. The present investigation focuses on searching for the quaternary compound where the half-metallic behavior is stable against outside influences. Overall, the results suggest that the best candidate may be found at an iron concentration of about 50%.Comment: 26 pages, 9 figures Phys. Rev. B accepte

A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100)

Epitaxial semiconducting NiYBi thin films were directly prepared on MgO(100) substrates by magnetron sputtering. The intensity ratio of the (200) and (400) diffraction peaks, I(200)/I(400) = 2.93, was close to the theoretical value (3.03). The electronic structure of NiYBi was calculated using WIEN2k and a narrow indirect band gap of width 210 meV was found. The valence band spectra of the films obtained by linear dichroism in hard X-ray photoelectron spectroscopy exhibit clear structures that are in good agreement with the calculated band structure of NiYBi

Electronic correlations and Hund's coupling effects in SrMoO3_3 revealed by photoemission spectroscopy

We investigate the electronic structure of a perovskite-type Pauli paramagnet SrMoO3 (t2g2) thin film using hard x-ray photoemission spectroscopy and compare the results to the realistic calculations that combine the density functional theory within the local-density approximation (LDA) with the dynamical-mean field theory (DMFT). Despite the clear signature of electron correlations in the electronic specific heat, the narrowing of the quasiparticle bands is not observed in the photoemission spectrum. This is explained in terms of the characteristic effect of Hund's rule coupling for partially-filled t2g bands, which induces strong quasiparticle renormalization already for values of Hubbard interaction which are smaller than the bandwidth. The interpretation is supported by additional model DMFT calculations including Hund's rule coupling, that show renormalization of low-energy quasiparticles without affecting the overall bandwidth. The photoemission spectra show additional spectral weight around -2 eV that is not present in the LDA+DMFT. We interpret this weight as a plasmon satellite, which is supported by measured Mo, Sr and Oxygen core-hole spectra that all show satellites at this energy.Comment: 8 pages, 7 figure

Recoil effects of photoelectrons in a solid

High energy resolution C 1$s$ photoelectron spectra of graphite were measured at the excitation energy of 340, 870, 5950 and 7940eV using synchrotron radiation. On increasing the excitation energy, i.e., increasing kinetic energy of the photoelectron, the bulk origin C 1$s$ peak position shifts to higher binding energies. This systematic shift is due to the kinetic energy loss of the high-energy photoelectron by kicking the atom, and is clear evidence of the recoil effect in photoelectron emission. It is also observed that the asymmetric broadening increases for the higher energy photoelectrons. All these recoil effects can be quantified in the same manner as the M\"ossbauer effect for $\gamma$-ray emission from nuclei embedded in crystals.Comment: 4 pages, 2 figure

Investigation on Mn3−δ_{3-\delta}Ga/MgO interface for magnetic tunneling junctions

The Mn$_3$Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque switching in magneto tunneling junctions. Improved performance can be achieved by high quality interfaces in these multilayered structured devices. In this context, the interface between Mn$_{1.63}$Ga and MgO is of particular interest because of its spin polarization properties in tunneling junctions. We performed a chemical characterization of the MgO/Mn$_{1.63}$Ga junction by hard x-ray photoelectron spectroscopy (HAXPES). The experiment indicated the formation of Ga-O bonds at the interface and evidenced changes in the local environment of Mn atoms in the proximity of the MgO film. In addition, we show that the insertion of a metallic Mg-layer interfacing the MgO and Mn--Ga film strongly suppresses the oxidation of gallium