457 research outputs found

    Indirect exchange in GaMnAs bilayers via spin-polarized inhomogeneous hole gas: Monte Carlo simulation

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    The magnetic order resulting from an indirect exchange between magnetic moments provided by spin-polarized hole gas in the metallic phase of a GaMnAs double layer structure is studied via Monte Carlo simulation. The coupling mechanism involves a perturbative calculation in second order of the interaction between the magnetic moments and carriers (holes). We take into account a possible polarization of the hole gas due to the existence of an average magnetization in the magnetic layers, establishing, in this way, a self-consistency between the magnetic order and the electronic structure. That interaction leads to an internal ferromagnetic order inside each layer, and a parallel arrangement between their magnetizations, even in the case of thin layers. This fact is analyzed in terms of the inter- and intra-layer interactions.Comment: 17 pages and 14 figure

    Nonequilibrium spin distribution in single-electron transistor

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    Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current. The dependencies of the magnetoresistance ratio δ\delta on the bias and gate voltages show the dips which are directly related to the induced separation of Fermi levels for electrons with different spins. Inside a dip δ\delta can become negative.Comment: 11 pages, 2 eps figure

    Spin flip scattering in magnetic junctions

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    Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance, which saturates at low temperatures. The conductance increases at high fields. ii) Magnon assisted tunneling reduces the magnetoresistance as T3/2T^{3/2}, and leads to a non ohmic contribution to the resistance which goes as V3/2V^{3/2}, iii) Surface antiferromagnetic magnons, which may appear if the interface has different magnetic properties from the bulk, gives rise to T2T^2 and V2V^2 contributions to the magnetoresistance and resistance, respectively, and, iv) Coulomb blockade effects may enhance the magnetoresistance, when transport is dominated by cotunneling processes.Comment: 5 page

    Granular systems in the Coulomb blockade regime

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    Disordered granular systems, at temperatures where charging effects are important, are studied, by means of an effective medium approximation. The intragrain charging energy leads to insulating behavior at low temperatures, with a well defined Coulomb gap. Non equilibrium effects can give rise to a zero temperature transition between a metallic, gapless phase, and an insulating phase

    Causal attribution of mental illness in south-eastern Nigeria

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    Background: Understanding of mental illness in sub-Saharan Africa has remained under-researched in spite of the high and increasing neuropsychiatric burden of disease in the region. Aims: This study investigated the causal beliefs that the Igbo people of south-eastern Nigeria hold about schizophrenia, with a view to establishing the extent to which the population makes psychosocial, biological and supernatural attributions. Method: Multi-stage sampling was used to select participants (N = 200) to which questionnaires were administered. Results: Mean comparison of the three causal models revealed a significant endorsement of supernatural causation. Logistic regressions revealed significant contributions of old age and female gender to supernatural attribution; old age, high education and Catholic religious denomination to psychosocial attributions; and high education to biological attributions. Conclusions: It is hoped that the findings would enlighten, augment literature and enhance mental health care service delivery
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