678 research outputs found

    Multiple-electron excitation in X-ray absorption: a simple generic model. Erratum

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    Amplitude reduction in EXAFS

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    EUV jets, type III radio bursts and sunspot waves investigated using SDO/AIA observations

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    Images from the Solar Dynamics Observatory (SDO) at 211A are used to identify the solar source of the type III radio bursts seen in WIND/WAVES dynamic spectra. We analyse a 2.5 hour period during which six strong bursts are seen. The radio bursts correlate very well with the EUV jets coming from the western side of a sunspot in AR11092. The EUV jet emission also correlates well with brightening at what looks like their footpoint at the edge of the umbra. For 10-15 min after strong EUV jets are ejected, the footpoint brightens at roughly 3 min intervals. In both the EUV images and the extracted light curves, it looks as though the brightening is related to the 3-min sunspot oscillations, although the correlation coefficient is rather low. The only open field near the jets is rooted in the sunspot. We conclude that active region EUV/X-ray jets and interplanetary electron streams originate on the edge of the sunspot umbra. They form along a current sheet between the sunspot open field and closed field connecting to underlying satellite flux. Sunspot running penumbral waves cause roughly 3-min jet footpoint brightening. The relationship between the waves and jets is less clear.Comment: 4 pages, 7 figures, Accepted by A&A Letters. For associated gif movie, see http://www.mps.mpg.de/data/outgoing/innes/jets/losb_304_211_rd.gi

    Multiple-electron excitation in X-ray absorption: a simple generic model

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    Reverse Monte Carlo modeling of amorphous silicon

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    An implementation of the Reverse Monte Carlo algorithm is presented for the study of amorphous tetrahedral semiconductors. By taking into account a number of constraints that describe the tetrahedral bonding geometry along with the radial distribution function, we construct a model of amorphous silicon using the reverse monte carlo technique. Starting from a completely random configuration, we generate a model of amorphous silicon containing 500 atoms closely reproducing the experimental static structure factor and bond angle distribution and in improved agreement with electronic properties. Comparison is made to existing Reverse Monte Carlo models, and the importance of suitable constraints beside experimental data is stressed.Comment: 6 pages, 4 PostScript figure

    Apicomplexan F-actin is required for efficient nuclear entry during host cell invasion

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    The obligate intracellular parasites Toxoplasma gondii and Plasmodium spp. invade host cells by injecting a protein complex into the membrane of the targeted cell that bridges the two cells through the assembly of a ring‐like junction. This circular junction stretches while the parasites apply a traction force to pass through, a step that typically concurs with transient constriction of the parasite body. Here we analyse F‐actin dynamics during host cell invasion. Super‐resolution microscopy and real‐time imaging highlighted an F‐actin pool at the apex of pre‐invading parasite, an F‐actin ring at the junction area during invasion but also networks of perinuclear and posteriorly localised F‐actin. Mutant parasites with dysfunctional acto‐myosin showed significant decrease of junctional and perinuclear F‐actin and are coincidently affected in nuclear passage through the junction. We propose that the F‐actin machinery eases nuclear passage by stabilising the junction and pushing the nucleus through the constriction. Our analysis suggests that the junction opposes resistance to the passage of the parasite's nucleus and provides the first evidence for a dual contribution of actin‐forces during host cell invasion by apicomplexan parasites
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