Optical and EPR spectroscopy of Er3+ in lithium yttrium borate, Li6Y(BO3)3:Er single crystals

The energy levels of Er3+ ions have been determined in lithium yttrium borate (Li6Y(BO3)3) single crystals in a wide spectral range between 6000 and 40000 cm-1 together with an analysis of the ground state, using optical and EPR spectroscopy. The crystal field splittings of the 4I15/2 ground state and those of nearly all excited states up to the 4D7/2 manifold have been obtained at low temperature from luminescence (T = 5 K) and absorption (T = 9 K) measurements, respectively. The numbers of experimentally observed Stark sublevels agree well with those expected theoretically for Er3+ ions occupying a single low symmetry (C1) site. A full set of g- and 167Er hyperfine tensor parameters are presented for the ground state characterized by EPR; the measured Orbach-type spin-relaxation rates viz. the involved activation energies correspond to the optically derived lowest excited sublevels

Structure of the silicon vacancy in 6H-SiC after annealing identified as the carbon vacancy–carbon antisite pair

We investigated radiation-induced defects in neutron-irradiated and subsequently annealed 6H-silicon carbide (SiC) with electron paramagnetic resonance (EPR), the magnetic circular dichroism of the absorption (MCDA), and MCDA-detected EPR (MCDA-EPR). In samples annealed beyond the annealing temperature of the isolated silicon vacancy we observed photoinduced EPR spectra of spin S=1 centers that occur in orientations expected for nearest neighbor pair defects. EPR spectra of the defect on the three inequivalent lattice sites were resolved and attributed to optical transitions between photon energies of 999 and 1075 meV by MCDA-EPR. The resolved hyperfine structure indicates the presence of one single carbon nucleus and several silicon ligand nuclei. These experimental findings are interpreted with help of total energy and spin density data obtained from the standard local-spin density approximation of the density-functional theory, using relaxed defect geometries obtained from the self-consistent charge density-functional theory based tight binding scheme. We have checked several defect models of which only the photoexcited spin triplet state of the carbon antisite–carbon vacancy pair (CSi-VC) in the doubly positive charge state can explain all experimental findings. We propose that the (CSi-VC) defect is formed from the isolated silicon vacancy as an annealing product by the movement of a carbon neighbor into the vacancy

Paramagnetic signature of microcrystalline silicon carbide

Abstract. The most important challenge on the way to optimized solar cells is to make the thickness of the individual layers smaller than the diffusion length of the charge carriers, in order to keep the collection efficiency close to unity. Here, we propose ß-SiC microcrystals grown by a sol-gel based process as a promising acceptor material. The samples are characterized by optical spectroscopy and electron paramagnetic resonance (EPR). With the help of band structures for selected surface states calculated in the framework of density functional theory (DFT) a possible scenario for the observed acceptor process is discussed

EPR, ESE and pulsed ENDOR study of nitrogen related centers in 4H-SiC wafers grown by different technologies

D-band electron paramagnetic resonance (EPR) measurements as well as X and Q-band field-swept Electron Spin Echo (ESE) and pulsed Electron Nuclear Double Resonance (ENDOR) studies were performed on a series of n-type 4H-SiC wafers grown by different techniques including sublimation sandwich method (SSM), physical vapor transport (PVT) and modified Lely method. Depending on the C/Si ratio and the growth temperature the n-type 4H-SiC wafers revealed, besides a triplet due to nitrogen residing on the cubic site (Nc), two nitrogen (N) related EPR spectra with g||=2.0055, g⊥=2.0010 and g||=2.0063, g⊥=2.0005 with different intensities. In the samples with low C/Si ratio the EPR spectrum with g||=2.0055, g⊥=2.0010 consists of a triplet with low intensity which is tentatively explained as a N-related complex, while in the samples with high C/Si ratio the triplet is transformed into one structureless line of high intensity, which is explained as being due to an exchange interaction between N donors. In the samples grown at low temperature with enhanced carbon concentration the EPR line with g||=2.0063, g⊥=2.0005 and a small hyperfine (hf) interaction dominates the EPR spectrum. It is attributed to N on the hexagonal lattice site. The interpretation of the EPR data is supported by activation energies and donor concentrations obtained from Hall effect measurements for three donor levels in this series of 4H-SiC samples

The elements of human cyclin D1 promoter and regulation involved

Cyclin D1 is a cell cycle machine, a sensor of extracellular signals and plays an important role in G1-S phase progression. The human cyclin D1 promoter contains multiple transcription factor binding sites such as AP-1, NF-қB, E2F, Oct-1, and so on. The extracellular signals functions through the signal transduction pathways converging at the binding sites to active or inhibit the promoter activity and regulate the cell cycle progression. Different signal transduction pathways regulate the promoter at different time to get the correct cell cycle switch. Disorder regulation or special extracellular stimuli can result in cell cycle out of control through the promoter activity regulation. Epigenetic modifications such as DNA methylation and histone acetylation may involved in cyclin D1 transcriptional regulation

Localization and Superconductivity in Doped Semiconductors

Motivated by the discovery of superconductivity in boron-doped (B-doped) diamond, we investigate the localization and superconductivity in heavily doped semiconductors. The competition between Anderson localization and s-wave superconductivity is investigated from the microscopic point of view. The effect of microscopic inhomogeneity and the thermal fluctuation in superconductivity are taken into account using the self-consistent 1-loop-order theory with respect to superconducting fluctuation. The crossover from superconductivity in the host band to that in the impurity band is described on the basis of the disordered three-dimensional attractive Hubbard model for binary alloys. We show that superconductor-insulator transition (SIT) accompanies the crossover. We point out an enhancement of Cooper pairing in the crossover regime. Further localization of the electron wave function gives rise to incoherent Cooper pairs and the pseudogap above T_c. A global phase diagram is drawn for host band superconductivity, impurity band superconductivity, Anderson localization, Fermi liquid state, and pseudogap state. A theoretical interpretation is proposed for superconductivity in the doped diamond, SiC, and Si.Comment: Final version for publication. To appear in J. Phys. Soc. Jpn. (2009) No.