712 research outputs found

    Metal-Insulator Transition in 2D: Experimental Test of the Two-Parameter Scaling

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    We report a detailed scaling analysis of resistivity \rho(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two parameter scaling approach and general scaling ideas. This enables us to determine the critical electron density, two critical indices, and temperature dependence for the separatrix in the self-consistent manner. In addition, we reconstruct the empirical scaling function describing a two-parameter surface which fits well the \rho(T,n) data.Comment: 4 pages, 4 figures, 1 tabl

    Detection of mechanical resonance of a single-electron transistor by direct current

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    We have suspended an Al based single-electron transistor whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island is placed underneath to increase the SET coupling to mechanical motion. The device can be considered as a doubly clamped Al beam that can transduce mechanical vibrations into variations of the SET current. Our simulations based on the orthodox model, with the SET parameters estimated from the experiment, reproduce the observed transport characteristics in detail.Comment: 4 pages, 3 figure

    Renormalization of hole-hole interaction at decreasing Drude conductivity

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    The diffusion contribution of the hole-hole interaction to the conductivity is analyzed in gated GaAs/Inx_xGa1−x_{1-x}As/GaAs heterostructures. We show that the change of the interaction correction to the conductivity with the decreasing Drude conductivity results both from the compensation of the singlet and triplet channels and from the arising prefactor αi<1\alpha_i<1 in the conventional expression for the interaction correction.Comment: 6 pages, 5 figure

    Electronic structure, magnetic and optical properties of intermetallic compounds R2Fe17 (R=Pr,Gd)

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    In this paper we report comprehensive experimental and theoretical investigation of magnetic and electronic properties of the intermetallic compounds Pr2Fe17 and Gd2Fe17. For the first time electronic structure of these two systems was probed by optical measurements in the spectral range of 0.22-15 micrometers. On top of that charge carriers parameters (plasma frequency and relaxation frequency) and optical conductivity s(w) were determined. Self-consistent spin-resolved bandstructure calculations within the conventional LSDA+U method were performed. Theoretical interpetation of the experimental s(w) dispersions indicates transitions between 3d and 4p states of Fe ions to be the biggest ones. Qualitatively the line shape of the theoretical optical conductivity coincides well with our experimental data. Calculated by LSDA+U method magnetic moments per formula unit are found to be in good agreement with observed experimental values of saturation magnetization.Comment: 16 pages, 5 figures, 1 tabl

    Spin-splitting in the quantum Hall effect of disordered GaAs layers with strong overlap of the spin subbands

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    With minima in the diagonal conductance G_{xx} and in the absolute value of the derivative |dG_{xy}/dB| at the Hall conductance value G_{xy}=e^{2}/h, spin-splitting is observed in the quantum Hall effect of heavily Si-doped GaAs layers with low electron mobility 2000 cm^2/Vs in spite of the fact that the spin-splitting is much smaller than the level broadening. Experimental results can be explained in the frame of the scaling theory of the quantum Hall effect, applied independently to each of the two spin subbands.Comment: 4 pages, 4 figure

    H-alpha Survey of the Local Volume: Isolated Southern Galaxies

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    We present our H-alpha observations of 11 isolated southern galaxies: SDIG, PGC 51659, E 222-010, E 272-025, E 137-018, IC 4662, Sag DIG, IC 5052, IC 5152, UGCA 438, and E149-003, with distances from 1 to 7 Mpc. We have determined the total H-alpha fluxes from these galaxies. The star formation rates in these galaxies range from 10^{-1} (IC 4662) to 10^{-4}_{\odot}/yr (SDIG) and the gas depletion time at the observed star formation rates lies within the range from 1/6 to 24 Hubble times H_0^{-1} .Comment: 9 pages, 3 figure
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