Проектирование системы электроснабжения электротехнического завода

В процессе исследования произведен расчет нагрузок трансформаторного и базы в целом с применением различных методов, выбор метода расчета производился на основе исходных данных, а также осуществлен выбор оборудования и его проверка при различных режимах работы. В результате исследования была спроектирована конкретная модель электроснабжения базы по обслуживанию нефтегазодобывающего месторождения, представлена ее экономическая целесообразность и безопасность для окружающей среды.In the process of studying the calculation of the load and base as a whole with the use of various methods, the choice of the calculation method on the basis of the initial data, and also the selection of equipment and its verification under various operating modes was carried out. As a result of the research, a specific model of power supply for the oil and gas industry maintenance base, its economic feasibility and safety for the environment was designed

Contribution a l'étude de l'effet de magnétoconcentration. Utilité du formalisme de Boltzmann

The magnetoconcentration effect is often used for the determination of the recombination parameters of semiconductors. We show that a qualitative method of calculation such as the hydrodynamic formalism leads to large errors, in comparison with the Boltzmann formalism.Le phénomène de magnétoconcentration est fréquemment utilisé pour la détermination des paramètres de recombinaison dans les semiconducteurs. Nous montrons qu'une approche basée sur le formalisme hydrodynamique conduit à des erreurs très importantes, par rapport à une étude utilisant le formalisme de Boltzmann

Beyond TFET: Alternative mechanisms for sharp switch

session: Novel SOI StructuresInternational audienceTunneling-based transistors (TFETs) have attracted interest due to their (theoretical) capability of switching more sharply than MOSFETs. However, other mechanisms that take place in SOI devices can provide even more abrupt switching and higher current. We examine the family of emerging TFET-competing devices based on barrier modulation, bipolar amplification and impact ionization. Practical results for devices fabricated in 14-28 nm FDSOI technology will be discussed

SOI trends: hot and green.

International audienc

Technologie SOI : du miracle grenoblois aux dispositifs émergents.

National audienc

Ultrathin SOI and GeOI Materials and Transistors. Invited paper

International audienc

Characterization methods for nanodevices.

International audienc