Effects of magnetic field and disorder on electronic properties of Carbon Nanotubes

Electronic properties of metallic and semiconducting carbon nanotubes are investigated in presence of magnetic field perpendicular to the CN-axis, and disorder introduced through energy site randomness. The magnetic field field is shown to induce a metal-insulator transition (MIT) in absence of disorder, and surprisingly disorder does not affect significantly the MIT. These results may find confirmation through tunneling experimentsComment: 4 pages, 6 figures. Phys. Rev. B (in press

Luttinger liquid behavior in multi-wall carbon nanotubes

The low-energy theory for multi-wall carbon nanotubes including the long-ranged Coulomb interactions, internal screening effects, and single-electron hopping between graphite shells is derived and analyzed by bosonization methods. Characteristic Luttinger liquid power laws are found for the tunneling density of states, with exponents approaching their Fermi liquid value only very slowly as the number of conducting shells increases. With minor modifications, the same conclusions apply to transport in ropes of single-wall nanotubes.Comment: 4 pages Revte

Universality of electron correlations in conducting carbon nanotubes

Effective low-energy Hamiltonian of interacting electrons in conducting single-wall carbon nanotubes with arbitrary chirality is derived from the microscopic lattice model. The parameters of the Hamiltonian show very weak dependence on the chiral angle, which makes the low energy properties of conducting chiral nanotubes universal. The strongest Mott-like electron instability at half filling is investigated within the self-consistent harmonic approximation. The energy gaps occur in all modes of elementary excitations and estimate at $0.01-0.1$ eV.Comment: 4 pages, 2 figure

Exciton binding energies in carbon nanotubes from two-photon photoluminescence

One- and two-photon luminescence excitation spectroscopy showed a series of distinct excitonic states in single-walled carbon nanotubes. The energy splitting between one- and two-photon-active exciton states of different wavefunction symmetry is the fingerprint of excitonic interactions in carbon nanotubes. We determine exciton binding energies of 0.3-0.4 eV for different nanotubes with diameters between 0.7 and 0.9 nm. Our results, which are supported by ab-initio calculations of the linear and non-linear optical spectra, prove that the elementary optical excitations of carbon nanotubes are strongly Coulomb-correlated, quasi-one dimensionally confined electron-hole pairs, stable even at room temperature. This alters our microscopic understanding of both the electronic structure and the Coulomb interactions in carbon nanotubes, and has direct impact on the optical and transport properties of novel nanotube devices.Comment: 5 pages, 4 figure

High-Field Electrical Transport in Single-Wall Carbon Nanotubes

Using low-resistance electrical contacts, we have measured the intrinsic high-field transport properties of metallic single-wall carbon nanotubes. Individual nanotubes appear to be able to carry currents with a density exceeding 10^9 A/cm^2. As the bias voltage is increased, the conductance drops dramatically due to scattering of electrons. We show that the current-voltage characteristics can be explained by considering optical or zone-boundary phonon emission as the dominant scattering mechanism at high field.Comment: 4 pages, 3 eps figure

Subband population in a single-wall carbon nanotube diode

We observe current rectification in a molecular diode consisting of a semiconducting single-wall carbon nanotube and an impurity. One half of the nanotube has no impurity, and it has a current-voltage (I-V) charcteristic of a typical semiconducting nanotube. The other half of the nanotube has the impurity on it, and its I-V characteristic is that of a diode. Current in the nanotube diode is carried by holes transported through the molecule's one-dimensional subbands. At 77 Kelvin we observe a step-wise increase in the current through the diode as a function of gate voltage, showing that we can control the number of occupied one-dimensional subbands through electrostatic doping.Comment: to appear in Physical Review Letters. 4 pages & 3 figure

Disorder, pseudospins, and backscattering in carbon nanotubes

We address the effects of disorder on the conducting properties of metal and semiconducting carbon nanotubes. Experimentally, the mean free path is found to be much larger in metallic tubes than in doped semiconducting tubes. We show that this result can be understood theoretically if the disorder potential is long-ranged. The effects of a pseudospin index that describes the internal sublattice structure of the states lead to a suppression of scattering in metallic tubes, but not in semiconducting tubes. This conclusion is supported by tight-binding calculations.Comment: four page

Electronic Properties of Armchair Carbon Nanotubes : Bosonization Approach

The phase Hamiltonian of armchair carbon nanotubes at half-filling and away from it is derived from the microscopic lattice model by taking the long range Coulomb interaction into account. We investigate the low energy properties of the system using the renormalization group method. At half-filling, the ground state is a Mott insulator with spin gap, in which the bound states of electrons at different atomic sublattices are formed. The difference from the recent results [Phys. Rev. Lett. 79, 5082 (1997)] away half-filling is clarified.Comment: 4 pages, 1 figure, Revte

Strategies for measurement of atmospheric column means of carbon dioxide from aircraft using discrete sampling

[1] Automated flask sampling aboard small charter aircraft has been proposed as a low-cost, reliable method to greatly increase the density of measurements of CO2 mixing ratios in continental regions in order to provide data for assessment of global and regional CO2 budgets. We use data from the CO2 Budget and Rectification-Airborne 2000 campaign over North America to study the feasibility of using discrete ( flask) sampling to determine column mean CO2 in the lowest 4 km of the atmosphere. To simulate flask sampling, data were selected from profiles of CO2 measured continuously with an onboard ( in situ) analyzer. We find that midday column means can be determined without bias relative to true column means measured by the in situ analyzer to within 0.15 and better than 0.10 ppm by using 10 and 20 instantaneously collected flask samples, respectively. More precise results can be obtained by using a flask sampling strategy that linearly integrates over portions of the air column. Using less than 8 - 10 flasks can lead to significant sampling bias for some common profile shapes. Sampling prior to the breakup of the nocturnal stable layer will generally lead to large sampling bias because of the inability of aircraft to probe large CO2 gradients that often exist very close to the ground at night and during the early morning

Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors

We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by cobalt electrodes. Scanning gate microscopy reveals that the bulk response of these devices is similar to gold-contacted p-CNFETs, confirming that Schottky barrier formation at the contact interface determines accessibility of electron and hole transport regimes. The transfer characteristics and Coulomb Blockade (CB) spectroscopy in ambipolar devices show strongly enhanced gate coupling, most likely due to reduction of defect density at the silicon/silicon-dioxide interface during hydrogen anneal. The CB data in the ``on''-state indicates that these CNFETs are nearly ballistic conductors at high electrostatic doping. Due to their nanoscale capacitance, CNFETs are extremely sensitive to presence of individual charge around the channel. We demonstrate that this property can be harnessed to construct data storage elements that operate at the few-electron level.Comment: 6 pages text, 3 figures and 1 table of content graphic; available as NanoLetters ASAP article on the we