In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is developed to derive BERs as functions of the design margin, to provide guidance for technology evaluation and product design. The proposed BER calculation can also be used in the off-line bench test and build-in-self-test (BIST) for adaptive error correction and for the other types of random access memories.Comment: 4 pages. Memory Workshop (IMW), 2015 IEEE Internationa

An approximate model for cancellous bone screw fixation

This is the author's accepted manuscript. The final published article is available from the link below. Copyright @ 2013 Taylor & Francis.This paper presents a finite element (FE) model to identify parameters that affect the performance of an improved cancellous bone screw fixation technique, and hence potentially improve fracture treatment. In cancellous bone of low apparent density, it can be difficult to achieve adequate screw fixation and hence provide stable fracture fixation that enables bone healing. Data from predictive FE models indicate that cements can have a significant potential to improve screw holding power in cancellous bone. These FE models are used to demonstrate the key parameters that determine pull-out strength in a variety of screw, bone and cement set-ups, and to compare the effectiveness of different configurations. The paper concludes that significant advantages, up to an order of magnitude, in screw pull-out strength in cancellous bone might be gained by the appropriate use of a currently approved calcium phosphate cement

Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8

Comprehensive measurements of dc and ac susceptibility, dc resistance, magnetoresistance, Hall resistivity, and microwave absorption and dispersion in fields up to 8 T have been carried out on RuSr_2GdCu_2O_8 with the aim to establish the properties of RuO_2 and CuO_2 planes. At ~130 K, where the magnetic order develops in the RuO_2 planes, one observes a change in the slope of dc resistance, change in the sign of magnetoresistance, and the appearance of an extraordinary Hall effect. These features indicate that the RuO_2 planes are conducting. A detailed analysis of the ac susceptibility and microwave data on both, ceramic and powder samples show that the penetration depth remains frequency dependent and larger than the London penetration depth even at low temperatures. We conclude that the conductivity in the RuO_2 planes remains normal even when superconducting order is developed in the CuO_2 planes below \~45 K. Thus, experimental evidence is provided in support of theoretical models which base the coexistence of superconductivity and magnetic order on decoupled CuO_2 and RuO_2 planes.Comment: 11 pages, 11 figures, submitted to PR

STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact Resistivity

We propose a very large scale integration compatible, modified transfer length method (TLM) structure, called sidewall TLM, to minimize the effect of spreading resistance and thus improving the resolution of the TLM method. This is achieved by allowing uniform current collection perpendicularly through the sidewall of the contact. We demonstrate statistically significant specific contact resistivity (rho(c)) extraction of 2 x 10(-8)Omega cm(2) and 5 x 10(-9)Omega cm(2) for n-type and p-type NiSi contacts, respectively, on a 300-mm wafer, which are about 50% less than those extracted using the conventional TLM structure. The proposed structure also shows a tighter distribution in the extracted rho(c) values. The results show the importance of such test structures to accurately extract ultralow rho(c) values relevant to sub-14-nm technology nodes.1188sciescopu