Variation of capacitance with voltage for FTO/MgPc/Al, FTO/Ch-diisoQ/Al, and FTO/MgPc-Ch-diisoQ/Al cells.

Variation of capacitance with voltage for FTO/MgPc/Al, FTO/Ch-diisoQ/Al, and FTO/MgPc-Ch-diisoQ/Al cells.</p

Diode parameters of the three examined thin films extracted from dark <i>C</i>-<i>V</i> and <i>I</i>-<i>V</i> characteristics.

Diode parameters of the three examined thin films extracted from dark C-V and I-V characteristics.</p

Power curves for FTO/MgPc/Al, FTO/Ch-diisoQ/Al, and FTO/MgPc-Ch-diisoQ/Al cells.

Power curves for FTO/MgPc/Al, FTO/Ch-diisoQ/Al, and FTO/MgPc-Ch-diisoQ/Al cells.</p

Fig 4 -

Absorbance spectra of (a) MgPc, (b) Ch-diisoQ, and (c) MgPc-Ch-diisoQ films.</p

Fig 7 -

Variation of 1/C2 with V for (a) FTO/MgPc/Al, (b) FTO/Ch-diisoQ/Al, and (c) FTO/MgPc-Ch-diisoQ/Al cells.</p

Load curves for FTO/MgPc/Al, FTO/Ch-diisoQ/Al, and FTO/MgPc-Ch-diisoQ/Al cells.

Load curves for FTO/MgPc/Al, FTO/Ch-diisoQ/Al, and FTO/MgPc-Ch-diisoQ/Al cells.</p

The dark <i>J</i>-<i>V</i> characteristics for FTO/MgPc/Al, FTO/Ch-diisoQ/Al, and FTO/MgPc-Ch-diisoQ/Al cells.

The dark J-V characteristics for FTO/MgPc/Al, FTO/Ch-diisoQ/Al, and FTO/MgPc-Ch-diisoQ/Al cells.</p

Fig 2 -

The SEM images of (a)MgPc, (b)Ch-diisoQ, and (c)MgPc-Ch-diisoQ thin films.</p

Scheme 1 -

The chemical structure of (a) MgPc and (b) Ch-diisoQ compounds.</p

The experimental setup for the preparation of investigated films.

The experimental setup for the preparation of investigated films.</p