Heterostructure unipolar spin transistors

We extend the analogy between charge-based bipolar semiconductor electronics and spin-based unipolar electronics by considering unipolar spin transistors with different equilibrium spin splittings in the emitter, base, and collector. The current of base majority spin electrons to the collector limits the performance of ``homojunction'' unipolar spin transistors, in which the emitter, base, and collector all are made from the same magnetic material. This current is very similar in origin to the current of base majority carriers to the emitter in homojunction bipolar junction transistors. The current in bipolar junction transistors can be reduced or nearly eliminated through the use of a wide band gap emitter. We find that the choice of a collector material with a larger equilibrium spin splitting than the base will similarly improve the device performance of a unipolar spin transistor. We also find that a graded variation in the base spin splitting introduces an effective drift field that accelerates minority carriers through the base towards the collector.Comment: 9 pages, 2 figure

Strong spin relaxation length dependence on electric field gradients

We discuss the influence of electrical effects on spin transport, and in particular the propagation and relaxation of spin polarized electrons in the presence of inhomogeneous electric fields. We show that the spin relaxation length strongly depends on electric field gradients, and that significant suppression of electron spin polarization can occur as a result thereof. A discussion in terms of a drift-diffusion picture, and self-consistent numerical calculations based on a Boltzmann-Poisson approach shows that the spin relaxation length in fact can be of the order of the charge screening length.Comment: 4 pages, 3 figures, to be presented at PASPSI

Bridging k- and q- Space in the Cuprates: Comparing ARPES and STM Results

A critical comparison is made between the ARPES-derived spectral function and STM studies of Friedel-like oscillations in Bi_2Sr_2CaCu_2O_{8+delta} (Bi2212). The data can be made approximately consistent, provided that (a) the elastic scattering seen in ARPES is predominantly small-angle scattering and (b) the `peak' feature seen in ARPES is really a dispersive `bright spot', smeared into a line by limited energy resolution; these are the `bright spots' which control the quasiparticle interferences. However, there is no indication of bilayer splitting in the STM data.Comment: 6 eps figures, revte

Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields

Using scanning Kerr microscopy, we directly acquire two-dimensional images of spin-polarized electrons flowing laterally in bulk epilayers of n:GaAs. Optical injection provides a local dc source of polarized electrons, whose subsequent drift and/or diffusion is controlled with electric, magnetic, and - in particular - strain fields. Spin precession induced by controlled uniaxial stress along the axes demonstrates the direct k-linear spin-orbit coupling of electron spin to the shear (off-diagonal) components of the strain tensor.Comment: 5 pages, 5 color figure

Multichannel Anomaly of the Resonance Pole Parameters Resolved

Inspired by anomalies which the standard scattering matrix pole-extraction procedures have produced in a mathematically well defined coupled-channel model, we have developed a new method based solely on the assumption of partial-wave analyticity. The new method is simple and applicable not only to theoretical predictions but to the empirical partial-wave data as well. Since the standard pole-extraction procedures turn out to be the lowest-order term of the proposed method the anomalies are understood and resolved.Comment: 5 page

Spatial structure of Mn-Mn acceptor pairs in GaAs

The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acceptor wave-function to high doping levels suggests that ferromagnetism in GaMnAs is strongly influenced by impurity-band formation. The envelope-function and tight-binding models predict similarly anisotropic overlaps of the Mn wave-functions for Mn-Mn pairs. This anisotropy implies differing Curie temperatures for Mn $\delta$-doped layers grown on differently oriented substrates.Comment: 4 pages, 4 figure

Nonlinear spin-polarized transport through a ferromagnetic domain wall

A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as functions of wall width and temperature. As the width increases or the temperature decreases, direct tunneling between the majority spin bands decreases the effectiveness of the diode. This has important implications for the zero-field quenched resistance of magnetic semiconductors and for the design of a recently proposed spin transistor.Comment: 5 pages, 3 figure