Inherent characteristics of ultra-photosensitive Al/Cu–CeO2/p-Si metal oxide semiconductor diodes

An ultrahigh photosensitive diode was developed using a Cu-doped CeO2 thin film through spray pyrolysis processing, which has made a unique contribution in the field of optoelectronic device fabrication process. Phase identification revealed a good arrangement of atoms in the as-prepared nanostructured thin films via structural analysis. The formation of wire-shaped nanorods was confirmed. Elemental distribution and their valence states were systematically monitored using X-ray photoelectron spectroscopy analysis, where the presence of Ce3+ was evidenced. Good mechanical properties were obtained owing to the Cu-doping in the cerium host matrix, which was investigated by nano-indentation. Bandgap energy fluctuation was the root cause for electrical conductivity. The present work revealed a decrease in the band gap energy upon Cu-doping alters the electrical conductivity. An as-fabricated photodiode demonstrated superior detectability upon Cu-doping. In the depletion region, on account of a high surface-to-volume ratio, the generation of electron-hole pairs increased along with photoresponsivity with increases in the quantum efficiency and current gain

Fabrication and characterization of Ru-doped LiCuFe2O4 nanoparticles and their capacitive and resistive humidity sensor applications

Polycrystalline ruthenium-doped lithium-copper-ferrite ( Ru-LiCuFe2O4) nanoparticles (NPs) are synthesized using a simple and cost-effective chemical co-precipitation method and annealed at different temperatures for increasing the crystallinity. The transmission and scanning electron microscopy images have confirmed the presence of soft agglomerations and cuboids for the samples annealed at 1100 °C. X-ray photoelectron results along with Raman spectra have collectively demonstrated the presence of Ru in the structure of Ru-LiCuFe2O4 NPs. The dielectric properties of as-synthesized Ru-LiCuFe2O4 NPs are investigated using LCR meter where the smaller NPs demonstrates a higher dielectric constant. Also, the results of magnetic measurements of annealed Ru-LiCuFe2O4 NPs have corroborated a soft magnetic nature due to the pinning sites that endow lower coercivity, remanence and saturation magnetization than that of the pristine one. The variation of permittivity and electrical resistivity with respect to frequency under humidity conditions suggested that this material has a potential to use as capacitive and resistive humidity sensor. The results of this study open the doors for utilization of metal-doped magnetic ferrites for humidity sensing application

Inherent characteristics of ultra-photosensitive Al/Cu–CeO₂/p-Si metal oxide semiconductor diodes

An ultrahigh photosensitive diode was developed using a Cu-doped CeO2thin film through spray pyrolysis processing, which has made a unique contribution in the field of optoelectronic device fabrication process.</jats:p

The rapid response and high sensitivity of a ruthenium-doped copper ferrite thin film (Ru–CuFe₂O₄) sensor

A sensor displaying a rapid response and high sensitivity was developed by following a simple route.</p